scholarly journals Vector Controlled Delay Cell with Nearly Identical Rise/Fall Time for Processor Clock Application

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Author(s):  
Yakov Gutkin ◽  
Asher Madjar ◽  
Emanuel Cohen

Abstract In this paper, we describe the design, layout, and performance of a 6-bit TTD (true time delay) chip operating over the entire band of 2–18 GHz. The 1.15 mm2 chip is implemented using TSMC foundry 65 nm technology. The least significant bit is 1 ps. The design is based on the concept of all-pass network with some modifications intended to reduce the number of unit cells. Thus, the first three bits are implemented in a single delay cell. A peaking buffer amplifier between bit 4 and bit 5 is used for impedance matching and partial compensation of the insertion loss slope. The rms delay error of the TTD is <1 ps over most of the frequency band and insertion loss is between 2.5 and 6.3 dB for all 64 states.


2020 ◽  
Vol 500 (3) ◽  
pp. 3123-3141
Author(s):  
Swagat R Das ◽  
Jessy Jose ◽  
Manash R Samal ◽  
Shaobo Zhang ◽  
Neelam Panwar

ABSTRACT The processes that regulate star formation within molecular clouds are still not well understood. Various star formation scaling relations have been proposed as an explanation, one of which is to formulate a relation between the star formation rate surface density $\rm \Sigma _{SFR}$ and the underlying gas surface density $\rm \Sigma _{gas}$. In this work, we test various star formation scaling relations, such as the Kennicutt–Schmidt relation, the volumetric star formation relation, the orbital time model, the crossing time model and the multi free-fall time-scale model, towards the North American Nebula and Pelican Nebula and in the cold clumps associated with them. Measuring stellar mass from young stellar objects and gaseous mass from CO measurements, we estimate the mean $\rm \Sigma _{SFR}$, the star formation rate per free-fall time and the star formation efficiency for clumps to be 1.5 $\rm M_{\odot}\, yr^{-1}\, kpc^{-2}$, 0.009 and 2.0 per cent, respectively, while for the whole region covered by both nebulae (which we call the ‘NAN’ complex) the values are 0.6 $\rm M_{\odot}\, yr^{-1}\, kpc^{-2}$, 0.0003 and 1.6 per cent, respectively. For the clumps, we notice that the observed properties are in line with the correlation obtained between $\rm \Sigma _{SFR}$ and $\rm \Sigma _{gas}$, and between $\rm \Sigma _{SFR}$ and $\rm \Sigma _{gas}$ per free-fall time and orbital time for Galactic clouds. At the same time, we do not observe any correlation with $\rm \Sigma _{gas}$ per crossing time and multi free-fall time. Even though we see correlations in the former cases, however, all models agree with each other within a factor of 0.5 dex. It is not possible to discriminate between these models because of the current uncertainties in the input observables. We also test the variation of $\rm \Sigma _{SFR}$ with the dense gas but, because of low statistics, a weak correlation is seen in our analysis.


Author(s):  
Guowei Chen ◽  
Dang Cong Bui ◽  
Xinyang Yu ◽  
Md. Zahidul Islam ◽  
Atsuki Kobayashi ◽  
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2008 ◽  
Vol 600-603 ◽  
pp. 747-750 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
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This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.


2016 ◽  
Vol 34 (4) ◽  
pp. 675-686 ◽  
Author(s):  
Z.-L. Pan ◽  
J.-H. Yang ◽  
X.-B. Cheng

AbstractAn anti-resonance pulse forming network (PFN) has been designed, analyzed, and tested for its application in generating quasi-square pulses. According to the circuit simulations, a compact generator based on two/three-section network was constructed. Two-section network is applied in the generator due to its compact structure, while three-section network is employed for generating pulses with higher quality. When two-section network is applied in the generator, the full-width at half-maximum of the load pulse is 400 ns, at the same time, its rise time, flat top and fall time are 90, 180 and 217 ns, respectively. When the three-section network is applied with the same pulse width of the load pulse, the rise time of the output decreases to 60 ns, while the flat top increases to 240 ns and the fall time reduces to 109 ns. Meanwhile, this kind of network could be used to shape the output pulses of generators whose equivalent circuit is LC series discharge network, such as MARX generator, into quasi-square pulses. And the preliminary experiment demonstrates that anti-resonance network could work well on four-stage Marx generators. A sine pulse generated by the four-stage Marx generator is shaped into a quasi-square pulse with voltage of 11.8 kV and pulse width about 110 ns based on two-section anti-resonance network.


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