scholarly journals Migration of electrons via triple-charged defects of crystal matrix

2020 ◽  
pp. 41-53 ◽  
Author(s):  
Nikolai A. Poklonski ◽  
Aliaksandr N. Dzeraviaha ◽  
Sergey A. Vyrko ◽  
Aliaksandr I. Kavaleu
Keyword(s):  
Electric Field ◽  
Radiation Resistance ◽  
Analytical Description ◽  
The State ◽  
Additional Contribution ◽  
Screening Length ◽  
Electron Pairs ◽  
Single Electrons ◽  
Charged Defects ◽  
State 1

The study of semiconductor materials with point radiation defects of the crystal structure in three charge states (–1), (0), (+1) is important for determining the conditions of their radiation resistance under the influence of gamma rays, fast electrons, etc. Such defects are self-sufficient to ensure electrical neutrality of the material under conditions of ionization equilibrium, that issue determines the radiation resistance of materials. In silicon and diamond crystals, such irradiation-induced defects during their accumulation stabilize the Fermi level in the vicinity of one third of the band gap from the top of the valence band. The purpose of the work is an analytical description of the stationary hopping electron transfer in a semiconductor, taking into account the joint migration of both the single electrons and the pairs of electrons over these triple-charged defects. A crystalline semiconductor is considered as a matrix containing immobile point defects of one sort in the prevailing concentration. For the first time in the drift-diffusion approximation, a phenomenological theory is constructed of coexisting migration of both the single electrons (transitions from the charge state (–1) to state (0) and from the state (0) to state (+1)), and the electron pairs (transitions from the state (–1) to state (+1)) by means of their hopping between such defects when an external stationary electric field is applied to the semiconductor. In the linear approximation, analytical expressions are obtained for the screening length of a static electric field and the length of the hopping diffusion of electrons migrating via such defects. It is shown that the additional contribution of the hopping transport of electron pairs leads to a decrease in the screening length and also changes the diffusion length.

scholarly journals Model of stationary migration of free and hopping via acceptors holes in a crystalline semiconductor

2020 ◽  
Vol 56 (1) ◽  
pp. 92-101
Author(s):  
N. A. Poklonski ◽  
A. N. Dzeraviaha ◽  
S. A. Vyrko
Keyword(s):  
Electric Field ◽  
Charge State ◽  
Phenomenological Theory ◽  
Screening Length ◽  
Crystalline Semiconductor ◽  
Stationary Electric Field ◽  
Special Cases ◽  
First Time ◽  
Analytical Expressions ◽  
State 1

In the diffusion-drift approximation, we have constructed a phenomenological theory of the coexisting migration of v-band holes and holes by means of hopping from hydrogen-like acceptors in the charge state (0) to acceptors in the charge state (−1). A p-type crystalline semiconductor is considered at a constant temperature, to which an external stationary electric field is applied. In the linear approximation, analytical expressions for the screening length of the static electric field and the length of the diffusion of v-band holes and the holes quasilocalized on acceptors are obtained for the first time. The presented relations, as special cases, contain well-known expressions. It is shown that the hopping migration of holes via acceptors leads to a decrease in the screening length and in the diffusion length.

Thomas Jefferson’s Virginia Criminal Law Bill

2018 ◽  
Author(s):  
Markus D. Dubber
Keyword(s):  
Criminal Law ◽  
Critical Analysis ◽  
Criminal Code ◽  
The State ◽  
Modern State ◽  
Historical Account ◽  
Liberal Democratic ◽  
Democratic State ◽  
Penal State ◽  
State 1

Part III of Dual Penal State uses dual penal state analysis to generate a comparative-historical account of American penality. With comparative glimpses at Germany and, to a lesser extent, England, it distinguishes between two responses to the shared challenge of legitimating state penal power in a modern liberal democratic state: (1) the failure to appreciate the legitimatory challenge of modern state penal power in particular (United States) and of modern state power in general (England); and (2) the failure to address the legitimatory challenge of modern state penal power as an ongoing existential threat to the legitimacy of the state (Germany). Chapter 6 undertakes a critical analysis of Jefferson’s 1779 draft of a criminal law bill for the State of Virginia, concluding that it fell well short of a criminal code that reflected the ideals of the American legal-political project as spelled out, for instance, in Jefferson’s Declaration of Independence of 1776.

Introduction

2018 ◽  
Author(s):  
Laurens van Apeldoorn ◽  
Robin Douglass
Keyword(s):  
The State ◽  
Modern State ◽  
Religious Thought ◽  
State 1

This volume investigates the complex and rich intersections between Thomas Hobbes’s political and religious thought. Hobbes is often credited with being one of the first great theorists of the modern state,1 but the state he theorized, as the title of his most famous work announces, was a commonwealth ecclesiastical and civil. One of the main goals of ...

scholarly journals Use of Zinc Ions To Study Thylakoid Protein Phosphorylation and the State 1-State 2 Transition In Vitro

1984 ◽  
Vol 74 (2) ◽  
pp. 348-354 ◽  
Author(s):  
John P. Markwell ◽  
Neil R. Baker ◽  
Michael Bradbury ◽  
J. Philip Thornber
Keyword(s):  
Protein Phosphorylation ◽  
The State ◽  
Zinc Ions ◽  
Thylakoid Protein ◽  
State 1 ◽  
Thylakoid Protein Phosphorylation

scholarly journals Corruption, illegitimacy and external influence: political factors of state instability

2020 ◽  
Vol 23 (8) ◽  
pp. 49-58
Author(s):  
Eduard Gugnin
Keyword(s):  
Physical Violence ◽  
Analytical Description ◽  
The State ◽  
External Influence ◽  
Negative Consequences ◽  
Power Structures ◽  
Law Enforcement Agencies ◽  
Spatial Cohesion ◽  
Ruling Elites ◽  
External Actors

The article constructs a descriptive and analytical description of the connection between corruption, delegitimization and loss of state sovereignty over society as background factors for increasing external influence and the destruction of political and spatial cohesion. As a result of the study, a conclusion was formulated, according to which the complete or partial loss of legitimacy coincides with the spread of corruption, which entails the devaluation of value and regulatory systems of social behavior. It is emphasized that corrupt practices contribute to the destruction of morals, law, ideology, have a devastating effect on government structures, procedures for its institutionalization, prevent the nomination of elites and leaders to command positions in the state apparatus, negatively affect the power and centralizing capabilities of the state. legitimate physical violence. It is noted that the loss of legitimacy is preceded by the loss of dialogue between government and society, the habitualization of corruption and its transformation into an endemic component of social life.It was stated that corruption increases the level of public permeability for external actors who take advantage of the situation of blurring the boundaries of political space and encourage citizens to spontaneous protests, which should shake the procedural principles of law and order, to achieve open conflicts between government and self-organized communities. what are the conditions for dialogue. External actors can seek to actively discredit the ruling elites by simultaneously unscrewing instability and escalating waves of destructive criticism aimed at disavowing all kinds of legitimacy: ideological, ethnic, structural, personalistic (charismatic), and others.It is noted that the final destruction of the state is the loss of a monopoly on public violence within the procedures established by law. Actors of external influence can resort to various acts of violence in order to encourage the ruling elites to increase security with the use of special Praetorian groups (paramilitary formations).It is summarized that the emergence of paramilitary formations is an indicator of the fragility of the state and its inability to control its own power structures, as evidenced by the violation of paramilitary formations of the usual official hierarchies and privatization of legitimate violence by alternative centers of power. Finally, it is emphasized that the destructive accompaniment of the latter is the growth of shadow arms markets, criminalization of the behavior of ordinary citizens who cease to see the state as an authorized defender of sovereignty and security and cease to trust legitimate law enforcement agencies, and these processes precede their colonial expansion. frozen conflicts with accompanying negative consequences for the state.

Trapping Dynamics And Charged Defects: Light Induced Studies in a-Si:H and a-Si1-xGe:H

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Hautala ◽  
J.D. Cohen
Keyword(s):  
Modulation Frequency ◽  
Drive Level ◽  
Excitation Intensity ◽  
The State ◽  
Intrinsic State ◽  
Spin Resonance ◽  
Quadrature Phase ◽  
Frequency Excitation ◽  
Charged Defects ◽  
Spin Densities

Bandtail defect carrier trapping dynamics in high quality photo-CVD grown a-Si1-xGex:H (x=0.3 and 0.62) and PECVD deposited a-Si:H films were studied using photo-modulated electron spin resonance (PMESR). Comparison of the dark spin densities with junction capacitance (drive-level profiling) methods indicate that a majority of the defects are neutral in the a-Si:H and 30% Ge samples, but the majority of the defects in the 62% Ge sample are charged. Lineshape deconvolution of the PMESR signals in the in-phase and quadrature phase as a function of photo-modulation frequency, excitation energy and excitation intensity for both intrinsic (state A) and light soaked (state B) states revealed three significant insights: in state A all samples behave similarly, state B behavior of the a-Si:H is dramatically different from the state B alloyed samples, and strong evidence for 'safe hole traps' (SHT) is observed in the state B a-Si:H material.

scholarly journals Drift Velocity, Longitudinal and Transverse Diffusion in Hydrocarbons derived from Distributions of Single Electrons

1992 ◽  
Vol 45 (3) ◽  
pp. 351 ◽  
Author(s):  
Bernhard Schmidt ◽  
Michael Roncossek
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Drift Velocity ◽  
Simultaneous Measurement ◽  
Diffusion Coefficients ◽  
Number Density ◽  
Transverse Diffusion ◽  
Single Electrons ◽  
Time Of Flight Method

A time of flight method is described which allows the simultaneous measurement of drift velocity w and the ratios of the longitudinal and transverse diffusion coefficients to mobility (DL/JL, DT/JL) of electrons in gases. The accuracy achieved in this omnipurpose experiment is comparable with that of specialised techniques and is estimated to be �1 % for w and �5% for the D / JL measurements .. Results for methane, ethane, ethene, propane, propene and cyclopropane for values of E/N (the electric field strength divided by the number density) ranging from 0�02 to 15 Td are presented and discussed (1 Td = 10-21 Vm2 ).

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