Influence of Annealing Temperature on the Microstructural and Electrical Characteristics of MgZnSnO Channel Layers for Thin Film Transistors

2014 ◽  
Vol 52 (12) ◽  
pp. 1009-1015
Author(s):  
Ho Seong Lee ◽  
Ho Beom Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Electrical Characteristics

Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2012 ◽  
Vol 51 (6R) ◽  
pp. 061101 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Yong-Jin Kim ◽  
Yong-Uk Lee ◽  
Yong-Hoon Kim ◽  
Jang-Yeon Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Solution Processed ◽  
Zinc Tin Oxide

Effect of annealing temperature on the electrical characteristics of Ti–Zn–Sn–O thin-film transistors fabricated via a solution process

2012 ◽  
Vol 27 (17) ◽  
pp. 2293-2298 ◽  
Author(s):  
Jong Chil Do ◽  
Ho Beom Kim ◽  
Cheol Hyoun Ahn ◽  
Hyung Koun Cho ◽  
Ho Seong Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Solution Process ◽  
Electrical Characteristics ◽  
Image Position

Abstract

Performance modification in solution-processed SnZnO thin film transistor

2010 ◽  
Vol 1247 ◽  
Author(s):  
Dong Lim Kim ◽  
Doo Na Kim ◽  
You Seung Rim ◽  
Si Joon Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Annealing Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Molar Ratio ◽  
Electrical Characteristics ◽  
Solution Processed

AbstractTin zinc oxide (SnZnO) thin film transistors (TFTs) with different component fraction fabricated by solution process were reported. Sn chloride and Zn acetate were used as precursor and the maximum annealing temperature was 500°C. The electrical characteristics of TFTs were acutely affected by the molar ratio between Sn and Zn in the lattice, and showed the highest mobility and on-to-off ratio of about 17 cm2/Vs and 2×106, respectively. The origins of the high performance were traced through both structural and electrical aspects. Sn was generally considered to offer carrier path by superposition of s orbital, but it was found that the increase of Sn fraction only below specific value in lattice contributed to increase mobility, which could be explained by the structural distortion and the defect generation. Zn atoms introduced in the lattice were necessary to control both mobility and carrier concentration. From these results, the solution-processed SnZnO TFT with high performance was suggested.

Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1723-1727 ◽  
Author(s):  
M. Cuscunà ◽  
G. Stracci ◽  
A. Bonfiglietti ◽  
A. di Gaspare ◽  
L. Maiolo ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Effects ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Electrical Characteristics
Sign in / Sign up

Export Citation Format

Share Document