Preparation and effects of post-annealing temperature on the electrical characteristics of Li–N co-doped ZnSnO thin film transistors

2017 ◽  
Vol 43 (6) ◽  
pp. 4926-4929 ◽  
Author(s):  
Shiqian Dai ◽  
Tao Wang ◽  
Ran Li ◽  
Dongzhan Zhou ◽  
Yunfei Peng ◽  
...  
2018 ◽  
Vol 9 (1) ◽  
pp. 83
Author(s):  
Jianqiu Chen ◽  
Xiuqi Huang ◽  
Qunjie Li ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
...  

In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.


2012 ◽  
Vol 51 (6R) ◽  
pp. 061101 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Yong-Jin Kim ◽  
Yong-Uk Lee ◽  
Yong-Hoon Kim ◽  
Jang-Yeon Kwon ◽  
...  

2017 ◽  
Vol 74 ◽  
pp. 139-149 ◽  
Author(s):  
E. Hasabeldaim ◽  
O.M. Ntwaeaborwa ◽  
R.E. Kroon ◽  
E. Coetsee ◽  
H.C. Swart

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