Effects of annealing temperature on the electrical characteristics of Li–N co-doped polycrystalline ZnO thin film transistors

ABSTRACTWe investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructures. A highly conductive interface formed at the interface between HfxZn1-xO and ZnO thin films as the ZnO annealing temperature exceeded 500°C, leading to the apparent decrease of the electrical resistance. The resistance decreased with an increase of either thickness or Hf content of the HfxZn1-xO capping layer. The Hf0.05Zn0.95O/ZnO heterostructure with a 200-nm-thick 600°C-annealed ZnO exhibits a carrier mobility of 14.3 cm2V-1s-1 and a sheet carrier concentration of 1.93×1013 cm-2; the corresponding values for the bare ZnO thin film are 0.47 cm2V-1s-1 and 2.27×1012 cm-2, respectively. Rf-sputtered HfZnO/ZnO heterostructures can potentially be used to increase the carrier mobility of thin-film transistors in large-area electronics.

Download Full-text

Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2015.10.015 ◽

2016 ◽

Vol 56 ◽

pp. 29-33 ◽

Cited By ~ 12

Author(s):

M. Estrada ◽

M. Rivas ◽

I. Garduño ◽

F. Avila-Herrera ◽

A. Cerdeira ◽

...

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Zno Thin Film ◽

Electrical Characteristics

Download Full-text

Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.061101 ◽

2012 ◽

Vol 51 (6R) ◽

pp. 061101 ◽

Cited By ~ 6

Author(s):

Jeong-Soo Lee ◽

Yong-Jin Kim ◽

Yong-Uk Lee ◽

Yong-Hoon Kim ◽

Jang-Yeon Kwon ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Annealing Temperature ◽

Oxide Thin Film ◽

Electrical Characteristics ◽

Solution Processed ◽

Zinc Tin Oxide

Download Full-text

Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

Nanomaterials ◽

10.3390/nano10061186 ◽

2020 ◽

Vol 10 (6) ◽

pp. 1186

Author(s):

Soo Cheol Kang ◽

So Young Kim ◽

Sang Kyung Lee ◽

Kiyung Kim ◽

Billal Allouche ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxygen Vacancies ◽

Drain Current ◽

Vacuum Treatment ◽

Trap Level ◽

Zno Thin Film ◽

Electrical Characteristics ◽

Bias Stress ◽

Trap Assisted Tunneling

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (ID) via trap-assisted tunneling when the gate voltage (VG) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m2 V−1·s−1 to 8.9 m2 V−1·s−1 and on-current increased by ~13%.

Download Full-text