Supercritical fluid of metal vapors plasma, rare gases and excitons

The proposed model allows to calculate the composition, thermodynamic and transport properties of the supercritical metal vapors within unified approach. The model includes atoms, immersed in jellium, and thermally ionized electrons and ions. The jellium is the part of the bound states electron density. The density of electron jellium increases with the compression of atomic gas and does not depend on temperature directly. At compression, the electrical conductivity passes through the minimum from the conductivity of thermal electrons to the conductivity of electrons of jellium accordingly. Calculations of the equation of state and the electrical conductivity of supercritical metal vapors agree well with physical and numerical experimental data.

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Erratum: Active Nitrogen in the Rare Gases and Its Excitation of Metal Vapors

The Journal of Chemical Physics ◽

10.1063/1.1741941 ◽

1955 ◽

Vol 23 (12) ◽

pp. 2468-2469

Author(s):

Carl Kenty

Keyword(s):

Rare Gases ◽

Active Nitrogen ◽

Metal Vapors

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The observation of nano-voids in Au thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126627 ◽

1987 ◽

Vol 45 ◽

pp. 366-367

Author(s):

William Krakow

Keyword(s):

Thin Films ◽

Melting Point ◽

Present Author ◽

Stacking Faults ◽

Damage Threshold ◽

Ionic Species ◽

Rare Gases ◽

Chain Defects ◽

Vacancy Chains ◽

Au Thin Films

It has long been known that defects such as stacking faults and voids can be quenched from various alloyed metals heated to near their melting point. Today it is common practice to irradiate samples with various ionic species of rare gases which also form voids containing solidified phases of the same atomic species, e.g. ref. 3. Equivalently, electron irradiation has been used to produce damage events, e.g. ref. 4. Generally all of the above mentioned studies have relied on diffraction contrast to observe the defects produced down to a dimension of perhaps 10 to 20Å. Also all these studies have used ions or electrons which exceeded the damage threshold for knockon events. In the case of higher resolution studies the present author has identified vacancy and interstitial type chain defects in ion irradiated Si and was able to identify both di-interstitial and di-vacancy chains running through the foil.

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