scholarly journals Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

2021 ◽  
Author(s):  
Hama Nadhom
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Selective Chemical

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia

2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Self Assembly ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Pore Density ◽  
Hot Wire ◽  
Precise Positioning ◽  
Selective Chemical

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

Selective chemical vapor deposition of tungsten for microelectromechanical structures

1989 ◽  
Vol 20 (1-2) ◽  
pp. 123-133 ◽  
Author(s):  
N.C. Macdonald ◽  
L.Y. Chen ◽  
J.J. Yao ◽  
Z.L. Zhang ◽  
J.A. McMillan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Chemical
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