Selective chemical vapor deposition of copper on AZ 5214™-patterned silicon substrates

2001 ◽  
Vol 19 (3) ◽  
pp. 759 ◽  
Author(s):  
D. Davazoglou ◽  
S. Vidal ◽  
A. Gleizes
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Selective Chemical

Effects on Selective CVD of Titanium Disilicide by Substrate Doping and Selective Silicon Deposition

1999 ◽  
Vol 564 ◽  
Author(s):  
Jer-shen Maa ◽  
David J. Howard
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Process Stability ◽  
Film Properties ◽  
Titanium Disilicide ◽  
Si Substrates ◽  
Selective Chemical ◽  
Substrate Doping

AbstractDuring selective chemical vapor deposition (CVD) of titanium disilicide on silicon, consumption of As implanted silicon substrates is enhanced relative to Si substrates implanted with other species. In this study, a selective epitaxially grown Si (SEG Si) layer has been deposited prior to selective CVD of titanium disilicide on samples with different implanted doses of either As or B. If no SEG Si film is deposited, the selective CVD TiSi2 film properties strongly depended on dopant type (As vs. B) and on dopant dose. Addition of a SEG Si film prior to selective CVD TiSi2 improves process stability as a function of changes in initial ion implanted conditions. Use of a SEG Si film prior to selective CVD TiSi2 results in values of TiSi2 thickness and TiSi2 sheet resistance which are approximately constant as a function of initial ion implant dose, and are approximately equal for both the As and B implanted samples used in this study.

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

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