scholarly journals UV-Induced Formation of Ice XI Observed Using an Ultra-High Vacuum Cryogenic Transmission Electron Microscope and its Implications for Planetary Science

2021 ◽  
Vol 9 ◽  
Author(s):  
Akira Kouchi ◽  
Yuki Kimura ◽  
Kensei Kitajima ◽  
Hiroyasu Katsuno ◽  
Hiroshi Hidaka ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Solar System ◽  
Uv Irradiation ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Planetary Science ◽  
Ultra High Vacuum ◽  
Outer Solar System ◽  
Transmission Electron ◽  
Uv Dose

The occurrence of hydrogen atom-ordered form of ice Ih, ice XI, in the outer Solar System has been discussed based on laboratory experiments because its ferroelectricity influences the physical processes in the outer Solar System. However, the formation of ice XI in that region is still unknown due to a lack of formation conditions at temperatures higher than 72 K and the effect of UV-rays on the phase transition from ice I to ice XI. As a result, we observed the UV-irradiation process on ice Ih and ice Ic using a newly developed ultra-high vacuum cryogenic transmission electron microscope. We found that ice Ih transformed to ice XI at temperatures between 75 and 140 K with a relatively small UV dose. Although ice Ic partially transformed to ice XI at 83 K, the rate of transformation was slower than for ice Ih. These findings point to the formation of ice XI at temperatures greater than 72 K via UV irradiation of ice I crystals in the Solar System; icy grains and the surfaces of icy satellites in the Jovian and Saturnian regions.

In Situ Observation of Quantized Growth of Titanium Silicide in Ultra High Vacuum Transmission Electron Microscope (UHV-TEM)

2006 ◽  
Vol 51 ◽  
pp. 14-19
Author(s):  
Cheng Lun Hsin ◽  
Wen Wei Wu ◽  
Hung Chang Hsu ◽  
Lih Juann Chen
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Titanium Silicide ◽  
Ultra High Vacuum ◽  
Dislocation Network ◽  
In Situ Observation ◽  
Stress Effect ◽  
Transmission Electron ◽  
Initial Stage

Dynamic study of the growth of TiSi2 nanorods on Si bicrystal was conducted in an ultrahigh vacuum transmission electron microscope. The growth of the nanorods was affected by the underlying dislocation grids significantly. The dislocation grids confined the shape of the nanoclusters and nanorods. Compared to the time of the nanorod remaining at the same length, the elongating time is relatively short. The dislocation network confined the nanorod to match the dislocation interspacing and the step-wise growth of the nanorod was found. The growth mechanism is attributed to the compliant effect. The observation was constructive to the basic understanding of the stress effect on the initial stage of the reaction of metals on Si.

The Growth and Characterisation of Ir Silicide Films on (111)Si

1990 ◽  
Vol 202 ◽  
Author(s):  
M.A. Lawn ◽  
R.G. Elliman ◽  
M.C. Ridgway ◽  
R. Leckey ◽  
J.D. Riley
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Grain Structure ◽  
Si Substrates ◽  
Fine Grain ◽  
Transmission Electron

ABSTRACTA study of the growth of thin Ir silicide films on (111)Si substrates has been undertaken. Thin (2.0nm) ir films deposited onto Si substrates under ultra-high vacuum conditions have been observed to display remarkable film continuity and fine grain structure (lnm). In situ annealing at 1000°C resulted in the formation of large regions (>10µm) of epitaxial IrSi3 islands (∼1µm) with identical epitaxial orientations. By means of annealing an as-deposited (2.0nm) Ir film stepwise to 1000°C within a transmission electron microscope the evolution of Ir silicide phases and morphologies were observed. The epitaxial growth of the semiconducting IrSi1.75 phase is reported along with the formation of Ir silicide islands at temperatures between 700°C and 800°C.

In-Situ Transmission Electron Microscopy of the Etching of Silicon (111) Surfaces by Oxygen

1991 ◽  
Vol 238 ◽  
Author(s):  
J. M. Gibson ◽  
F. M. Ross
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Oxide Layer ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Surface Steps ◽  
Transmission Electron

ABSTRACTSilicon (111) surfaces have been etched in-situ in a ultra-high vacuum transmission electron microscope. Surface steps are observed to flow during etching, so that Si atoms are removed only from steps. This is in contrast to the behavior during the formation of an oxide layer reported previously. The nucleation of steps and their interaction with surface impurities is described.

scholarly journals The Development of Ultra-high Vacuum Cs-Corrected Scanning Transmission Electron Microscope for Fast Fabrication of Desired Nanostructures

2006 ◽  
Vol 12 (S02) ◽  
pp. 1366-1367 ◽  
Author(s):  
K Furuya ◽  
K Mitsuishi ◽  
M Tanaka ◽  
M Takeguchi ◽  
Y Kondo ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Scanning Transmission Electron Microscope ◽  
Ultra High Vacuum ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Surface Studies of Silicon with a High Resolution Transmission Electron Microscope

1985 ◽  
Vol 56 ◽  
Author(s):  
J.M. Gibson ◽  
M.L. McDonald ◽  
F.C. Unterwald ◽  
H.-J. Gossmann ◽  
J.C. Bean ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Bond Density ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Energy Surfaces

AbstractUsing a specially modified ultra-high vacuum, ultra-high resolution transmission electron microscope, in-situ cleaned Si surfaces have been examined with near atomic resolution. By annealing the edges of a <110> thin Si specimen in-situ, it is found that low energy surfaces form. A surprising observation is that the {113} surface is stable and reconstructed by dimerization to a very low dangling bond density. It is also found that a 7×7 surface peridoicity can be preserved at a buried Si < 111 > / amorphous Si interface.

The structure and basic operating modes of a STEM

1984 ◽  
Vol 42 ◽  
pp. 332-335
Author(s):  
John B. Vander Sande
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Scanning Transmission Electron Microscope ◽  
Ultra High Vacuum ◽  
Electron Gun ◽  
Vacuum System ◽  
Major Advance ◽  
Operating Modes ◽  
Transmission Electron

The scanning transmission electron microscope (STEM) represents a major advance in the microanalytical capabilities of instruments available to materials scientists. The STEM concept resulted from the desire to combine features of the transmission electron microscope (TEM), scanning electron microscope (SEM), and the electron microprobe. Several types of STEMs are currently in use; they can be divided into roughly three categories based on origin and philosophy of design. First are the “dedicated” STEMs, pioneered by Crewe and his coworkers, which generally use a field-emission electron gun housed in an ultra-high-vacuum system. A conventional TEM may also be equipped with a scanning attachment and an electron detector and/or spectrometer, yielding what may be referred to as a TEM(S). Finally, in practice an SEM may be fitted with a transmission stage; in this case the designation SEM(T) may be most appropriate. The first two designs are by far the most popular for currently available commercial instruments.

The High Resolution Scanning Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 316-317
Author(s):  
A. V. Crewe
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
High Vacuum ◽  
Scanning Transmission Electron Microscope ◽  
Ultra High Vacuum ◽  
Resolving Power ◽  
Imaging Characteristics ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Moment

The high resolution STEM is now a fact of life. I think that we have, in the last few years, demonstrated that this instrument is capable of the same resolving power as a CEM but is sufficiently different in its imaging characteristics to offer some real advantages.It seems possible to prove in a quite general way that only a field emission source can give adequate intensity for the highest resolution^ and at the moment this means operating at ultra high vacuum levels. Our experience, however, is that neither the source nor the vacuum are difficult to manage and indeed are simpler than many other systems and substantially trouble-free.

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