scholarly journals Development of Ultra High Vacuum Transmission Electron Microscope for In Situ Observation of Silicides And Island Formation on Silicon Surface at High Temperatures by Reflection And Transmission Electron Microscope

2002 ◽  
Vol 9 (2) ◽  
pp. 150-159
Author(s):  
J. Kato ◽  
Y. Higashi ◽  
T. Nagatomi ◽  
Y. Takai
Keyword(s):  
Electron Microscope ◽  
High Temperatures ◽  
Transmission Electron Microscope ◽  
Silicon Surface ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
In Situ Observation ◽  
Reflection And Transmission ◽  
Transmission Electron

In Situ Observation of Quantized Growth of Titanium Silicide in Ultra High Vacuum Transmission Electron Microscope (UHV-TEM)

2006 ◽  
Vol 51 ◽  
pp. 14-19
Author(s):  
Cheng Lun Hsin ◽  
Wen Wei Wu ◽  
Hung Chang Hsu ◽  
Lih Juann Chen
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Titanium Silicide ◽  
Ultra High Vacuum ◽  
Dislocation Network ◽  
In Situ Observation ◽  
Stress Effect ◽  
Transmission Electron ◽  
Initial Stage

Dynamic study of the growth of TiSi2 nanorods on Si bicrystal was conducted in an ultrahigh vacuum transmission electron microscope. The growth of the nanorods was affected by the underlying dislocation grids significantly. The dislocation grids confined the shape of the nanoclusters and nanorods. Compared to the time of the nanorod remaining at the same length, the elongating time is relatively short. The dislocation network confined the nanorod to match the dislocation interspacing and the step-wise growth of the nanorod was found. The growth mechanism is attributed to the compliant effect. The observation was constructive to the basic understanding of the stress effect on the initial stage of the reaction of metals on Si.

The Growth and Characterisation of Ir Silicide Films on (111)Si

1990 ◽  
Vol 202 ◽  
Author(s):  
M.A. Lawn ◽  
R.G. Elliman ◽  
M.C. Ridgway ◽  
R. Leckey ◽  
J.D. Riley
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Grain Structure ◽  
Si Substrates ◽  
Fine Grain ◽  
Transmission Electron

ABSTRACTA study of the growth of thin Ir silicide films on (111)Si substrates has been undertaken. Thin (2.0nm) ir films deposited onto Si substrates under ultra-high vacuum conditions have been observed to display remarkable film continuity and fine grain structure (lnm). In situ annealing at 1000°C resulted in the formation of large regions (>10µm) of epitaxial IrSi3 islands (∼1µm) with identical epitaxial orientations. By means of annealing an as-deposited (2.0nm) Ir film stepwise to 1000°C within a transmission electron microscope the evolution of Ir silicide phases and morphologies were observed. The epitaxial growth of the semiconducting IrSi1.75 phase is reported along with the formation of Ir silicide islands at temperatures between 700°C and 800°C.

In-Situ Transmission Electron Microscopy of the Etching of Silicon (111) Surfaces by Oxygen

1991 ◽  
Vol 238 ◽  
Author(s):  
J. M. Gibson ◽  
F. M. Ross
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Oxide Layer ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Surface Steps ◽  
Transmission Electron

ABSTRACTSilicon (111) surfaces have been etched in-situ in a ultra-high vacuum transmission electron microscope. Surface steps are observed to flow during etching, so that Si atoms are removed only from steps. This is in contrast to the behavior during the formation of an oxide layer reported previously. The nucleation of steps and their interaction with surface impurities is described.

Surface Studies of Silicon with a High Resolution Transmission Electron Microscope

1985 ◽  
Vol 56 ◽  
Author(s):  
J.M. Gibson ◽  
M.L. McDonald ◽  
F.C. Unterwald ◽  
H.-J. Gossmann ◽  
J.C. Bean ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Bond Density ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Energy Surfaces

AbstractUsing a specially modified ultra-high vacuum, ultra-high resolution transmission electron microscope, in-situ cleaned Si surfaces have been examined with near atomic resolution. By annealing the edges of a <110> thin Si specimen in-situ, it is found that low energy surfaces form. A surprising observation is that the {113} surface is stable and reconstructed by dimerization to a very low dangling bond density. It is also found that a 7×7 surface peridoicity can be preserved at a buried Si < 111 > / amorphous Si interface.

In situ observation of ordering process in FePt films during annealing in a transmission electron microscope

2006 ◽  
Vol 99 (12) ◽  
pp. 123905 ◽  
Author(s):  
K. Kawai ◽  
S. Honda ◽  
M. Nawate ◽  
M. Komatsu ◽  
K. Kawabata
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
In Situ Observation ◽  
Transmission Electron

In situ observation of the motion of ferroelectric domain walls in Bi4Ti3O12 single crystals

2016 ◽  
Vol 49 (5) ◽  
pp. 1645-1652 ◽  
Author(s):  
Wanneng Ye ◽  
Lingli Tang ◽  
Chaojing Lu ◽  
Huabing Li ◽  
Yichun Zhou
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Single Crystals ◽  
Transmission Electron Microscope ◽  
Domain Walls ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
In Situ Observation ◽  
Transmission Electron

Five types of ferroelectric domain walls (DWs) are present in Bi4Ti3O12 single crystals (Ye et al., 2015). Here their motion was investigated in situ using transmission electron microscopy and optical microscopy. The motion of P (a)-90° DWs, P (a)-180° DWs and P (c)-180° DWs was observed through electron beam poling in a transmission electron microscope. The growth of new P s(a)-180° nanodomains was frequently seen and they tended to nucleate at preexisting P s(a)-90° DWs. Irregularly curved P (c)-180° DWs exhibit the highest mobility, while migration over a short range occurs occasionally for faceted P s(a)-90° DWs. In addition, the motion of P s(a)-90° DWs and the growth/annihilation of new needle-like P s(a)-90° domains in a 20 µm-thick crystal were observed under an external electric field on an optical microscope. Most of the new needle-like P s(a)-90° domains nucleate at preexisting P s(a)-90° DWs and the former are much smaller than the latter. This is very similar to the situation for P s(a)-180° domain switching induced by electron beam poling in a transmission electron microscope. Our observations suggest the energy hierarchy for different domains of P s(c)-180° ≤ P s(a)-180° ≤ P s(a)-90° ≤ new needle-like P s(a)-90° in ferroelectric Bi4Ti3O12.

To-and-Fro Motion of W5Si3 on a β-Si3N4 Substrate at Elevated Temperatures

2002 ◽  
Vol 8 (1) ◽  
pp. 16-20 ◽  
Author(s):  
S. Arai ◽  
K. Suzuki ◽  
H. Saka
Keyword(s):  
Electron Microscope ◽  
High Temperatures ◽  
Transmission Electron Microscope ◽  
Elevated Temperatures ◽  
Fine Particles ◽  
Transmission Electron ◽  
In Situ Heating

Behavior of fine crystalline particles of W5Si3 on a β-Si3N4 substrate at high temperatures was observed by an in situ heating experiment in a transmission electron microscope. Some of the fine particles of W5Si3 moved in a to-and-fro manner.

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