Two Dimensional Parity Check with Variable Length Error Detection Code for the Non-Volatile Memory of Smart Data

This paper proposes a novel technology of memory protection for the Non-Volatile Memory (NVM), applied to smart sensors and smart data. Based on the asymmetry of failure rate between the statuses of bit-0 and bit-1 in the non-volatile memory, as a result of the pollution of the radiation of cosmic ray, a two-dimensional parity with variable length error detection code (2D-VLEDC) for memory protection is proposed. 2D-VLEDC has the feature of variable length of redundant bits varied with content of data word in the NVM. The experimental results show that the same error detection quality could be achieved with a 30% redundancy improvement by applying the proposed 2D-VLEDC. The proposed design is particularly suitable for the use of safety-related fields, such as the automotive electronics and industrial non-volatile memories involved in the industrial automation.

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Fine-granularity tile-level parallelism in non-volatile memory architecture with two-dimensional bank subdivision

Proceedings of the 53rd Annual Design Automation Conference on - DAC '16 ◽

10.1145/2897937.2898024 ◽

2016 ◽

Cited By ~ 5

Author(s):

Matthew Poremba ◽

Tao Zhang ◽

Yuan Xie

Keyword(s):

Two Dimensional ◽

Memory Architecture ◽

Non Volatile Memory ◽

Volatile Memory ◽

Level Parallelism

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Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition

Nanomaterials ◽

10.3390/nano10081471 ◽

2020 ◽

Vol 10 (8) ◽

pp. 1471

Author(s):

Kun Yang ◽

Hongxia Liu ◽

Shulong Wang ◽

Wenlong Yu ◽

Tao Han

Keyword(s):

Power Dissipation ◽

Large Scale ◽

Electronic Devices ◽

Charge Storage ◽

Two Dimensional ◽

Large Scale Preparation ◽

Two Dimensional Materials ◽

Non Volatile Memory ◽

Scale Preparation ◽

Volatile Memory

Two-dimensional materials with atomic thickness have become candidates for wearable electronic devices in the future. Graphene and transition metal sulfides have received extensive attention in logic computing and sensing applications due to their lower power dissipation, so that their processes have been relatively mature for large-scale preparation. However, there are a few applications of two-dimensional materials in storage, which is not in line with the development trend of integration of storage and computing. Here, a charge storage quasi-non-volatile memory with a lanthanum incorporation high-k dielectric for next-generation memory devices is proposed. Thanks to the excellent electron capture capability of LaAlO3, the MoS2 memory exhibits a very comprehensive information storage capability, including robust endurance and ultra-fast write speed of 1 ms approximately. It is worth mentioning that it exhibits a long-term stable charge storage capacity (refresh time is about 1000 s), which is 105 times that of the dynamic random access memory (refresh time is on a milliseconds timescale) so that the unnecessary power dissipation greatly reduces caused by frequent refresh. In addition, its simple manufacturing process makes it compatible with various current two-dimensional electronic devices, which will greatly promote the integration of two-dimensional electronic computing.

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