scholarly journals (Ba,K)(Zn,Mn)2Sb2: A New Type of Diluted Magnetic Semiconductor

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 690
Author(s):  
Shuang Yu ◽  
Guoqiang Zhao ◽  
Yi Peng ◽  
Xiancheng Wang ◽  
Qingqing Liu ◽  
...  
Keyword(s):  
Narrow Band ◽  
Diluted Magnetic Semiconductor ◽  
Parent Phase ◽  
Magnetic Semiconductor ◽  
Theoretical Models ◽  
Degenerate Semiconductor ◽  
New Type ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering ◽  
Very Low Temperature

A series of polycrystalline samples of a new diluted magnetic semiconductor (DMS) (Ba,K)(Zn,Mn)2Sb2 has been synthesized and systematically studied. The parent phase is the so-called “Zintl compound” BaZn2Sb2, a week-degenerate semiconductor with a narrow band gap of 0.2 eV. In (Ba,K)(Zn,Mn)2Sb2, the charge is doped by (Ba,K) substitution while the spin is independently doped by (Zn,Mn) substitution. (Ba,K)(Zn,Mn)2Sb2 and analogue (Ba,K)(Zn,Mn)2As2 have comparable narrow band gaps, carrier and spin concentrations. However, the former establishes a short-range spin-glass order at a very low temperature (<10 K), while the latter forms a long-range ferromagnetic ordering with a Curie temperature up to 230 K. The sharp contrast makes (Ba,K)(Zn,Mn)2Sb2 to be a touchstone for DMS theoretical models.

scholarly journals Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Licheng Fu ◽  
Yilun Gu ◽  
Guoxiang Zhi ◽  
Haojie Zhang ◽  
Rufei Zhang ◽  
...  
Keyword(s):  
Unit Cell Volume ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Vital Role ◽  
Ferromagnetic Transition ◽  
Chemical Pressure ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

AbstractWe report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn$$_{1-x}$$ 1 - x Co$$_{x}$$ x )$$_{2}$$ 2 As$$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3$$\%$$ % with 15$$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18$$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As$$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)$$_{2}$$ 2 As$$_{2}$$ 2 DMS.

A new diluted magnetic semiconductor based on the expanded phase of ZnS: surmounting the random distribution of magnetic impurities

2015 ◽  
Vol 17 (19) ◽  
pp. 13117-13122 ◽  
Author(s):  
Zhifeng Liu ◽  
Xinqiang Wang ◽  
Hengjiang Zhu
Keyword(s):  
First Principles ◽  
Random Distribution ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Impurities ◽  
First Principles Study ◽  
New Type ◽  
Diluted Magnetic

A new type of diluted magnetic semiconductor based on the cluster-assembled phase of ZnS was predicted by a first-principles study.

scholarly journals The Magnetic Properties of 1111-type Diluted Magnetic Semiconductor (La1−xBax)(Zn1−xMnx)AsO in the Low Doping Regime

2018 ◽  
Vol 3 (4) ◽  
pp. 42
Author(s):  
Guoxiang Zhi ◽  
Kai Wang ◽  
Haojie Zhang ◽  
Cui Ding ◽  
Shengli Guo ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Exchange Interactions ◽  
Spin Interaction ◽  
Antiferromagnetic Exchange ◽  
Weiss Temperature ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering ◽  
Ordered State

We investigated the magnetic properties of (La 1 − x Ba x )(Zn 1 − x Mn x )AsO with x varying from 0.005 to 0.05 at an external magnetic field of 1000 Oe. For doping levels of x ≤ 0.01, the system remains paramagnetic down to the lowest measurable temperature of 2 K. Only when the doping level increases to x = 0.02 does the ferromagnetic ordering appear. Our analysis indicates that antiferromagnetic exchange interactions dominate for x ≤ 0.01, as shown by the negative Weiss temperature fitted from the magnetization data. The Weiss temperature becomes positive, i.e., ferromagnetic coupling starts to dominate, for x ≥ 0.02. The Mn-Mn spin interaction parameter ∣ 2 J / k B ∣ is estimated to be in the order of 10 K for both x ≤ 0.01 (antiferromagnetic ordered state) and x ≥ 0.02 (ferromagnetic ordered state). Our results unequivocally demonstrate the competition between ferromagnetic and antiferromagnetic exchange interactions in carrier-mediated ferromagnetic systems.

scholarly journals Диодные гетероструктуры с ферромагнитным слоем (Ga, Mn)As

2020 ◽  
Vol 62 (3) ◽  
pp. 373
Author(s):  
Б.Н. Звонков ◽  
О.В. Вихрова ◽  
Ю.А. Данилов ◽  
М.В. Дорохин ◽  
И.Л. Калентьева ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Diluted Magnetic Semiconductor ◽  
Forward Bias ◽  
Magnetic Semiconductor ◽  
Voltage Range ◽  
Forward Bias Voltage ◽  
Carrier Scattering ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering ◽  
Charge Carrier Scattering

The diode p-(Ga,Mn)As/n-InGaAs/n+-GaAs heterostructures, which differ in thickness (from 5 to 50 nm) of a diluted magnetic semiconductor (Ga,Mn)As layer, were fabricated and studied. We found the negative magnetoresistance effect, reaching 6–8% in a 3600 Oe magnetic field. The effect was conserved up to temperatures of 70–80 K and associated with a decrease in charge carrier scattering due to ferromagnetic ordering in the (Ga,Mn)As layer. The dependence of the magnetoresistance on the forward bias voltage is nonmonotonic with the maximum magnetoresistance and its observation voltage range depending on the (Ga,Mn)As layer thickness. The magnetic field dependences of the magnetoresistance have a hysteretic shape due to the influence of tensile stresses in the (Ga,Mn)As layer grown on top of the relaxed InGaAs material on the appearance of the magnetization component, perpendicular to the structure surface.

scholarly journals A New Type Diluted Magnetic Semiconductor Li(Zn,Mn)As

2012 ◽  
Vol 400 (3) ◽  
pp. 032033
Author(s):  
Z Deng ◽  
Q Q Liu ◽  
X C Wang ◽  
J L Zhu ◽  
S M Feng ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
New Type ◽  
Diluted Magnetic
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