scholarly journals Annealing Induced Saturation in Electron Concentration for V-Doped CdO

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1079
Author(s):  
Yajie Li ◽  
Guibin Chen ◽  
Kinman Yu ◽  
Wladyslaw Walukiewicz ◽  
Weiping Gong
Keyword(s):  
Electrical Properties ◽  
Electron Concentration ◽  
Stabilization Energy ◽  
Isochronal Annealing ◽  
Native Defects ◽  
Changing Trends

As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.

Modeling of Chlorine Related Defects and Complexes in ZnMgSe

2001 ◽  
Vol 677 ◽  
Author(s):  
Yaxiang Yang ◽  
Leonid Muratov ◽  
Bernard R. Cooper ◽  
Thomas H. Myers ◽  
John M. Wills
Keyword(s):  
Ab Initio ◽  
Band Gap ◽  
Electron Concentration ◽  
Defect Complex ◽  
Strong Tendency ◽  
Full Potential ◽  
Native Defects ◽  
Lmto Method ◽  
Formation Energies

ABSTRACTWe have used the ab-initio full potential LMTO method to model native defects and chlorine-impurity-related defects in ZnSe and ZnxMg1−xSe. Our results show that there is a strong tendency for formation of a defect complex between a chlorine impurity at the Se site and a vacancy at the neighboring Zn site. The formation energies of this complex and other chlorine related defects decrease in the presence of magnesium. However, the maximum achievable electron concentration in the presence of magnesium is lower because of the increase in the band gap.

The Electrical Properties of Thin Films of TiNx and TiCx

1975 ◽  
Vol 30 (12) ◽  
pp. 1661-1666 ◽  
Author(s):  
P. J. P. De Maayer ◽  
J. D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electron Transfer ◽  
Electron Beam ◽  
Electrical Properties ◽  
Transport Properties ◽  
Electron Concentration ◽  
Defect Structure ◽  
Electron Beam Evaporation ◽  
Transfer Theory ◽  
Electron Transfer Theory

Abstract Thin films of metallically conductive titanium mononitride and carbide were prepared by means of electron beam evaporation. The composition of the samples could be changed over appreciable ranges by introducing nitrogen in the system or adding carbon to the pure starting material, respectively. The transport properties of the resulting compounds were studied as a function of nonstoichiometry and defect structure. A plausible explanation for the different behavior of the films compared to corresponding bulk samples is given and a correlation between the change in electron concentration and the electron transfer theory is presented.

Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
R.Y. Korotkov ◽  
B.W. Wessels
Keyword(s):  
Experimental Data ◽  
Electrical Properties ◽  
Vapor Phase ◽  
Electron Concentration ◽  
Formation Energy ◽  
Shallow Donor ◽  
Square Root ◽  
Compensation Ratio ◽  
Pressure Oxygen ◽  
Hall Effect Measurements

AbstractDeliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Rapid Thermal Annealing of Si+ and P+ Dually Implanted InP

1989 ◽  
Vol 157 ◽  
Author(s):  
Shen Honglie ◽  
Yang Genqing ◽  
Zhou Zuyao ◽  
Zou Shichang
Keyword(s):  
Electrical Properties ◽  
Rapid Thermal Annealing ◽  
Electron Concentration ◽  
Electron Mobility ◽  
High Dose ◽  
Dopant Activation ◽  
Different Temperatures ◽  
Average Electron ◽  
Single Implant ◽  
Tungsten Lamp

ABSTRACT150keV Si* ions and 160keV P* ions were implanted at 200°C with doses ranging from 5x1013 to 1x1015/cm2 to study the effect of dual implantations on the electrical properties of Fe doped InP. Samples encapsulated with Si3N4 films of about 1000Å were annealed in a halogen tungsten lamp RTA system under flowing N2 at different temperatures from 700 to 900°C for 5s. It has been found that Si*+P* dual implantations into InP can result in an enhanced activation, particularly significant at high dose of implantation. The maximum dopant activation and average electron mobility for Si*+P* dual implants at a dose of 1×1015/cm2 are 70% and 750cm2/vs, which corresponds to a peak electron concentration of 5×1019/cm3 while that for Si* single implant at the same dose are 29% and 870cm2/vs, which corresponds to a peak electron concentration of 1.2×10 19/cm3. The improvement of the electrical properties is discussed in terms of amphoteric behavior of silicon in InP.

Electrical Properties of InSbN Alloys Fabricated by Two-Step Ion Implantation

2012 ◽  
Vol 569 ◽  
pp. 305-310
Author(s):  
Y. Wang ◽  
D.H. Zhang ◽  
Y.J. Jin ◽  
X.Z. Chen ◽  
J.H. Li
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Carrier Concentration ◽  
Electron Concentration ◽  
Hall Mobility ◽  
Scattering Mechanism ◽  
Annealing Temperatures ◽  
Donor Type ◽  
Nitrogen Ions ◽  
Exponential Relation

We report the electrical properties of the InSbN alloys fabricated by two-step implantation of nitrogen ions into InSb wafers, characterized by Hall measurements. The alloy with higher implanted dose shows lower electron concentration due to the acceptor nature of nitrogen. At temperatures below 150 K, the electron concentration does not change and follows an exponential relation at above 200 K. The Hall mobility in all samples monotonically decreases with the increase of temperature, indicating the phonon dominating scattering mechanism. The annealing results reveal that annealing temperatures up to 598 K make the carrier concentration lower due to the reduction of donor-type defects caused by ion implantation and the acceptor nature of nitrogen.

Effect of isochronal annealing on CdTe and the study of electrical properties of Au–CdTe Schottky devices

2003 ◽  
Vol 81 (3) ◽  
pp. 617-624 ◽  
Author(s):  
F M Amanullah
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Forward Bias ◽  
Vapour Phase ◽  
Isochronal Annealing ◽  
Single Crystal Substrate ◽  
Barrier Formation ◽  
Crystal Substrate ◽  
Different Temperatures ◽  
Schottky Devices

Single-crystal CdTe was grown with the vapour phase technique. Dice were suitably etched and then annealed in air isochronally at different temperatures (473, 573, 673, and 773 K) for the same period of time (1 h). Schottky barriers were made by vacuum evaporation of gold onto the as-grown CdTe single-crystal substrate as well as onto the isochronally annealed substrates. The physical properties of Au–CdTe devices were studied as a function of temperature by electrical methods, such as capacitance–voltage and current–voltage analysis. The isochronal annealing technique was found to produce a significant change in the electrical properties, such as barrier height, carrier concentration, ideality factor, and forward-bias threshold, of the Au–CdTe Schottky diode. The observations are discussed in terms of the various theories of Schottky barrier formation. PACS No.: 73.30ty

Structural, Electronic, and Electrical Properties of an Undoped n-Type CdO Thin Film with High Electron Concentration

2014 ◽  
Vol 118 (27) ◽  
pp. 15019-15026 ◽  
Author(s):  
Domenico A. Cristaldi ◽  
Salvatrice Millesi ◽  
Isodiana Crupi ◽  
Giuliana Impellizzeri ◽  
Francesco Priolo ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electron Concentration ◽  
High Electron ◽  
High Electron Concentration
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