scholarly journals Physics-Informed Neural Network for High Frequency Noise Performance in Quasi-Ballistic MOSFETs

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2219
Author(s):  
Jonghwan Lee
Keyword(s):  
Neural Network ◽  
Shot Noise ◽  
High Frequency ◽  
Equivalent Circuit Model ◽  
Tunneling Current ◽  
Fano Factor ◽  
Channel Noise ◽  
Frequency Noise ◽  
Noise Performance ◽  
Noise Sources

A physics-informed neural network (PINN) model is presented to predict the nonlinear characteristics of high frequency (HF) noise performance in quasi-ballistic MOSFETs. The PINN model is formulated by combining the radial basis function-artificial neural networks (RBF-ANNs) with an improved noise equivalent circuit model, including all the noise sources. The RBF-ANNs are utilized to model the thermal channel noise, induced gate noise, correlation noise, as well as the shot noise, due to the gate and source-drain tunneling current through the potential barriers. By training a spatial distribution of the thermal channel noise and a Fano factor of the shot noise, underlying physical theories are naturally embedded into the PINN model as prior information. The PINN model shows good capability of predicting the noise performance at high frequencies.

Gaseous Discharge Super-High-Frequency Noise Sources

1951 ◽  
Vol 39 (8) ◽  
pp. 908-914 ◽  
Author(s):  
Harwick Johnson ◽  
K. Deremer
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Noise Sources ◽  
High Frequency Noise ◽  
Gaseous Discharge ◽  
Super High Frequency

High frequency noise performance of AlGaN/InGaN/GaN HEMTs with AlN interlayer

2012 ◽  
Author(s):  
Guilin Lan ◽  
Yuehang Xu ◽  
Yongbo Chen ◽  
Yunchuan Guo ◽  
Ruimin Xu
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Noise Performance ◽  
High Frequency Noise ◽  
Gan Hemts

scholarly journals High-Frequency Noise Sources in Quantum Wells

2002 ◽  
Vol 102 (2) ◽  
pp. 329-335
Author(s):  
L. Ardaravičius ◽  
J. Liberis ◽  
A. Matulionis
Keyword(s):  
Quantum Wells ◽  
High Frequency ◽  
Frequency Noise ◽  
Noise Sources ◽  
High Frequency Noise

Effect of Stimulus Duration on Localization of Direction of Noise Stimuli

1970 ◽  
Vol 13 (4) ◽  
pp. 826-838 ◽  
Author(s):  
Willard R. Thurlow ◽  
James R. Mergener
Keyword(s):  
Stimulus Duration ◽  
Head Movement ◽  
High Frequency ◽  
Thermal Noise ◽  
Low Frequency ◽  
Frequency Noise ◽  
Noise Sources ◽  
Minimum Duration ◽  
High Frequency Noise ◽  
Efficient Performance

Localization of the direction of bursts of thermal noise was measured for both high-frequency and low-frequency bands, as a function of duration of bursts. Durations of 0.3, 1, 2, and 5 sec were used. Subjects were free to move their heads to aid in localization. Subjects were not specially trained in sound localization. With increase in stimulus duration, perception of elevation was slightly improved for low-frequency noise, probably due to increased information from head movement. A minimum duration of the order of 2 sec appears necessary to allow subjects to achieve maximum performance (which still is not very good for these low-frequency stimuli). Perception of the elevation of the high-frequency noise sources we used was relatively good even at the briefest duration; however, variability of judgment was larger at the shorter durations. Perception of front-back source position was much improved for both low-frequency and high-frequency noise when stimulus duration was increased. The results are understandable in terms of the increased possibility for head movement with increase in stimulus duration. It appears that one should use a minimum stimulus duration of about 2 sec if one wishes subjects to approach their most efficient performance.

Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless GaxIn1−xAs/GaAs field-effect transistor

2021 ◽  
pp. 2150238
Author(s):  
Mahdi Vadizadeh ◽  
Mohammad Fallahnejad
Keyword(s):  
Radio Frequency ◽  
Effective Mass ◽  
Mole Fraction ◽  
High Frequency ◽  
Cutoff Frequency ◽  
Frequency Noise ◽  
Noise Performance ◽  
High Frequency Noise ◽  
Gaas Structure ◽  
Simulation Results

In this paper, for the first time, changes in the effective mass (EM) of electron and hole with mole fraction are taken into account for extracting the benchmarking parameters of analog/radio frequency (RF) and high-frequency noise performance of junctionless (JL)-Ga[Formula: see text]In[Formula: see text]As/GaAs via simulation. In the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs structure, considering changes in the effective mass with mole fraction is called a with-EM state, while the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs structure without considering the changes in effective mass with mole fraction is called a without-EM state. The simulation results show that, per [Formula: see text], the maximum transconductance in the with-effective mass (EM) state is [Formula: see text] mS/[Formula: see text]m, which is reduced by 8% compared to the without-EM state. The JL-Ga[Formula: see text]In[Formula: see text]As/GaAs device in the with-EM state has the unity gain cutoff frequency of [Formula: see text] GHz, minimum noise figure of [Formula: see text] db, and available associated gain of [Formula: see text] db. The [Formula: see text] and [Formula: see text] parameters in the with-EM state decreased by 10% and 38%, respectively, compared to the without-EM state. Moreover, [Formula: see text] in the with-EM state increased by 65% compared to the without-EM state. Our simulation results indicated that an increase in electron effective mass with the increased [Formula: see text] can limit the analog/RF frequency and high-frequency noise performance of the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs device.

Study of the Coherence of Acoustic Fields of High-Frequency Noise Sources in a Randomly Inhomogeneous Ocean

2018 ◽  
Vol 64 (2) ◽  
pp. 215-224 ◽  
Author(s):  
A. I. Khil’ko ◽  
I. P. Smirnov ◽  
A. I. Mashonin ◽  
A. V. Shafranyuk
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Acoustic Fields ◽  
Noise Sources ◽  
High Frequency Noise

Impact of Downscaling on High-Frequency Noise Performance of Bulk and SOI MOSFETs

2004 ◽  
Vol 51 (10) ◽  
pp. 1605-1612 ◽  
Author(s):  
G. Pailloncy ◽  
C. Raynaud ◽  
M. Vanmackelberg ◽  
F. Danneville ◽  
S. Lepilliet ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Noise Performance ◽  
High Frequency Noise
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