scholarly journals Accurately Modeling of Zero Biased Schottky-Diodes at Millimeter-Wave Frequencies

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 696 ◽  
Author(s):  
Jéssica Gutiérrez ◽  
Kaoutar Zeljami ◽  
Tomás Fernández ◽  
Juan Pablo Pascual ◽  
Antonio Tazón
Keyword(s):  
Flip Chip ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Electromagnetic Simulation ◽  
Frequency Noise ◽  
Noise Sources ◽  
Simulation Tools ◽  
W Band ◽  
3D Em ◽  
Chip Attachment

This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.

scholarly journals Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1450
Author(s):  
Jéssica Gutiérrez ◽  
Kaoutar Zeljami ◽  
Juan Pablo Pascual ◽  
Tomás Fernández ◽  
Antonio Tazón
Keyword(s):  
Schottky Diode ◽  
State Of The Art ◽  
Low Cost ◽  
Schottky Diodes ◽  
Zero Bias ◽  
Simulation Tools ◽  
W Band ◽  
Intensive Use ◽  
Em Simulation ◽  
3D Em

This paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed.

Noise source location and scaling of subsonic upper-surface blowing

2020 ◽  
Vol 19 (3-5) ◽  
pp. 191-206
Author(s):  
Trae L Jennette ◽  
Krish K Ahuja
Keyword(s):  
Strouhal Number ◽  
Noise Source ◽  
Low Frequency ◽  
Directivity Pattern ◽  
Source Location ◽  
Dipole Source ◽  
Frequency Noise ◽  
Noise Sources ◽  
Trailing Edge ◽  
Trailing Edge Noise

This paper deals with the topic of upper surface blowing noise. Using a model-scale rectangular nozzle of an aspect ratio of 10 and a sharp trailing edge, detailed noise contours were acquired with and without a subsonic jet blowing over a flat surface to determine the noise source location as a function of frequency. Additionally, velocity scaling of the upper surface blowing noise was carried out. It was found that the upper surface blowing increases the noise significantly. This is a result of both the trailing edge noise and turbulence downstream of the trailing edge, referred to as wake noise in the paper. It was found that low-frequency noise with a peak Strouhal number of 0.02 originates from the trailing edge whereas the high-frequency noise with the peak in the vicinity of Strouhal number of 0.2 originates near the nozzle exit. Low frequency (low Strouhal number) follows a velocity scaling corresponding to a dipole source where as the high Strouhal numbers as quadrupole sources. The culmination of these two effects is a cardioid-shaped directivity pattern. On the shielded side, the most dominant noise sources were at the trailing edge and in the near wake. The trailing edge mounting geometry also created anomalous acoustic diffraction indicating that not only is the geometry of the edge itself important, but also all geometry near the trailing edge.

Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

2021 ◽  
Vol 42 (3) ◽  
pp. 442-445
Author(s):  
Dongseok Kwon ◽  
Wonjun Shin ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Low-frequency noise sources in two-dimensional high-lift devices

2000 ◽  
Author(s):  
M. Roger ◽  
S. Perennes
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Two Dimensional ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
High Lift

Low frequency noise sources in AlGaN/GaN HEMTs

1999 ◽  
Author(s):  
J. A. Garrido ◽  
F. Calle ◽  
E. Muñoz ◽  
I. Izpura ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Gan Hemts

scholarly journals INFRASOUND AND LOW FREQUENCY NOISE IMMISION FROM PIPELINES. iMPROVING THE ISO 1996-2:2017 PROPOSED METHODS. CASES STUDIES CONDUCTED AT LOS ANDES AND PERUVIAN RAINFOREST

Akustika ◽  
2019 ◽  
Vol 32 ◽  
pp. 335-345
Author(s):  
Walter Montano
Keyword(s):  
Low Frequency ◽  
Sound Level ◽  
Frequency Noise ◽  
Gas Extraction ◽  
Howler Monkeys ◽  
Noise Sources ◽  
Industrial Facilities ◽  
Sound Levels ◽  
Continuous Noise ◽  
Amazonian Rainforest

The gas extraction wells are in Amazonian rainforest and by them there are their industrial facilities. The pipeline has about 800 km with four pumps stations and two compressor stations. The challenge of conducting sound measurements was important-there is no specialized literature-and other noise "sources" are howler monkeys, cicadidae chirping, woodpeckers, trees´foliage, etc. However the problem is simply because those fixed industrial facilities are the only ones. People live in isolated hamlet on the side of dirt roads, so they are exposed 24/7 to the continuous noise; at homes 4 km away from the plants the sound level is 60 dBC, but in the spectrum of ILFN tones could not be identified. This Paper presents the procedures that were developed to identify the ILFN tones, improving the methods proposed in ISO 1996-2, writing a software that "automatically eliminates" the sound levels that don´t belong to the industry,

Low-frequency noise in GaAs and InP Schottky diodes

2002 ◽  
Author(s):  
K.F. Sato ◽  
C.W. Chan ◽  
K. Najita ◽  
M.P. DeLisio ◽  
Y.H. Chung ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers

2003 ◽  
Vol 0 (7) ◽  
pp. 2396-2399
Author(s):  
W. K. Fong ◽  
B. H. Leung ◽  
C. Surya ◽  
L. W. Lu ◽  
W. K. Ge
Keyword(s):  
Schottky Diodes ◽  
Low Frequency ◽  
Intermediate Temperature ◽  
Buffer Layers ◽  
Frequency Noise ◽  
Low Frequency Noise

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures

2013 ◽  
Vol 854 ◽  
pp. 21-27 ◽  
Author(s):  
N.P. Garbar ◽  
Valeriya N. Kudina ◽  
V.S. Lysenko ◽  
S.V. Kondratenko ◽  
Yu.N. Kozyrev
Keyword(s):  
High Surface ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Physical Processes ◽  
Noise Sources ◽  
Noise Component ◽  
First Time ◽  
Noise Models

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

Investigation of 1/f Noise and Superimposed RTS Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes

2015 ◽  
Vol 14 (04) ◽  
pp. 1550041 ◽  
Author(s):  
Alexey V. Klyuev ◽  
Arkady V. Yakimov
Keyword(s):  
Gaussian Noise ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Noise Component ◽  
Burst Noise ◽  
Noise Characteristics ◽  
Total Noise ◽  
Processing Techniques ◽  
Rts Noise

Low frequency noise characteristics of Schottky diodes are investigated. Two noise components were found in experimental noise records: random telegraph signal (RTS), caused by burst noise, and 1/f Gaussian noise. The noise is sampled and recorded on a PC. Then, in addition to the spectrum, the probability density function (pdf) of the total noise is analyzed. In the case of the mixture of the burst noise and Gaussian (1/f) noise, the pdf has two maxima separated by a local minimum. Extraction of burst noise component from Gaussian noise background was performed using the pdf, standard signal detection theory, and advanced signal-processing techniques. It is concluded that the RTS noise and 1/f noise have different physical origins in Schottky diodes. The raw noise is split into two components. One appeared to be burst noise with a Lorentzian-like spectral shape. The other component is 1/f noise. Having extracted 1/f noise, we have studied the dependence of noise spectral values on the current across the diode.

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