scholarly journals Optimal Design of an X-Band, Fully-Coaxial, Easily-Tunable Broadband Power Equalizer for a Microwave Power Module

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 829
Author(s):  
Fabio Paolo Lo Gerfo ◽  
Patrizia Livreri
Keyword(s):  
High Power ◽  
Microwave Power ◽  
Sensitivity Analyses ◽  
Operating Frequency ◽  
Power Module ◽  
Insertion Depth ◽  
Large Power ◽  
Coaxial Cavity ◽  
X Band ◽  
Power Stage

A microwave power module (MPM), which is a hybrid combination of a solid-state power amplifier (SSPA) as a driver and a traveling-wave tube amplifier (TWT) as the final high power stage, is a high-power device largely used for radar applications. A gain equalizer is often required to flatten the TWT output power gain owing to its big gain fluctuations over the operating frequency range. In this paper, the design of an X-band, fully-coaxial, easily-tunable broadband power equalizer for an MPM is presented. The structure is composed of a coaxial waveguide as the main transmission line and a coaxial cavity loaded with absorbing material as a resonant unit. Sensitivity analyses of the attenuation amplitude and resonant frequency of the equalizer in terms of coaxial cavity length, thickness of the absorbing disc, and insertion depth of the probe were carried out. The measured results were in good agreement with the simulated ones, showing that the equalization curve met the requirements well and proved that this optimal structure has the advantages of a large power capacity, a wide operating frequency band, is easily tunable, and good transmission performance.

scholarly journals A Fully Coaxial Tunable Broadband Power Equalizer for an X-band MPM

2020 ◽  
Author(s):  
Patrizia Livreri ◽  
Fabio Lo Gerfo
Keyword(s):  
High Power ◽  
Traveling Wave Tube ◽  
Power Devices ◽  
Coaxial Cavity ◽  
Operating Frequency Range ◽  
Power Modules ◽  
X Band ◽  
Power Stage ◽  
Absorbing Material ◽  
Radar Applications

Microwave Power Modules (MPM) are high power devices largely used for radar applications. An MPM is a hybrid combination of a Solid-State Power Amplifier (SSPA) as a driver and a Traveling wave tube amplifier (TWT) as the final high power stage. Power equalizer is often used to flat the TWT output power gain owing to its big gain fluctuations in the operating frequency range. This paper deals with an optimal design and development of a fully-coaxial easy-tunable power equalizer for an X-band MPM. The structure utilizes a coaxial waveguide as the main transmission line and a coaxial cavity loaded with absorbing material as the resonant unit. A sensitivity analysis of the coaxial cavity length, the thickness of the absorbing disc and inserted depth of the probe on the attenuation amplitude and resonant frequency is carried out. The transmission characteristic curves and the voltage standing wave ratio curves show a good compromise in terms of transferred power and adaptive matching impedance at the input and output ports. The measured results show that the equalization curve meets the requirements well and prove that this structure is practical and effective.

Optimal Design of a Coaxial Cavity Based on Quality-Factor Maximization for High-Power Coaxial Magnetron in $X$ -Band

2018 ◽  
Vol 46 (3) ◽  
pp. 503-510 ◽  
Author(s):  
Mohit Kumar Joshi ◽  
Sandeep Kumar Vyas ◽  
Tapeshwar Tiwari ◽  
Ratnajit Bhattacharjee
Keyword(s):  
Optimal Design ◽  
Quality Factor ◽  
High Power ◽  
Coaxial Cavity ◽  
X Band

Next Generation High Power Electronic Modules Based on Embedded Power Semiconductors

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000694-000719 ◽  
Author(s):  
Lars Böttcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
Eckart Hoene ◽  
A. Ostmann
Keyword(s):  
High Power ◽  
Cost Effective ◽  
Switching Frequency ◽  
Research Projects ◽  
Power Module ◽  
Large Power ◽  
Power Semiconductors ◽  
Power Modules ◽  
3D Assembly ◽  
Bond Wires

The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductances. Power chip packages have to carry semiconductors with increasing current densities. Conventional wire bonds are limiting their performance. Today's power modules are based on DCB (Direct Copper bonded) ceramic substrates. IGBT switches are mounted onto the ceramic and their top side contacts are connected by thick Al wires. This allows one wiring layer only and makes an integration of driver chips very difficult. Additionally bond wires result in a high stray inductance which limits the switching frequency. Especially for the use of ultra-fast switching semiconductors, like SiC and GaN, it is very difficult to realize low inductive packages. The embedding of chips offers a solution for many of the problems in power chip packages and power modules. While chip embedding was an academic exercise a decade ago, it is now an industrial solution. A huge advantage of packaging using PCB technology is the cost-effective processing on large panel. Furthermore embedded packages and modules allow either double-side cooling or 3D assembly of components like capacitors, gate drivers or controllers. The advanced results of research projects will be discussed in the paper. An ultra-low inductance power module with SiC switches at 20 A / 600 V has been realized and characterized. The DC link inductance of the module was 0,8 nH only. These results sparked a huge interest in currently starting follow up projects creating package for fast switches. In a further project power modules for automotive power inverters for motor control are under development. As a project demonstrator, a 10 kW module with IGBTs and diodes at 400 V / 500 A, was manufactured. This demonstrator is based on high power PCB technology and was fully characterized; the results will be presented in detail. Recently started research projects will face the challenges of MW solar inverters at 1000 A and 1000 V, using SiC semiconductors as switches. First concepts will be presented as an outlook.

The microwave power module: a versatile RF building block for high-power transmitters

1999 ◽  
Vol 87 (5) ◽  
pp. 717-737 ◽  
Author(s):  
C.R. Smith ◽  
C.M. Armstrong ◽  
J. Duthie
Keyword(s):  
High Power ◽  
Microwave Power ◽  
Building Block ◽  
Power Module

Development of a 30 GHz-band 20 W microwave power module

1998 ◽  
Author(s):  
Takatsugu Munehiro ◽  
Kurao Nakagawa ◽  
Junichi Matsuoka ◽  
Hajime Fukui
Keyword(s):  
Microwave Power ◽  
Power Module

A new approach for a microwave power module (MPM)

2000 ◽  
Author(s):  
K.-H. Huebner ◽  
S. Heider
Keyword(s):  
Microwave Power ◽  
Power Module ◽  
New Approach

Design of TE01 Window for X-Band High Power Klystron

2011 ◽  
Vol 30 (2) ◽  
pp. 501-504
Author(s):  
Peng Sun ◽  
Yao-gen Ding ◽  
Ding Zhao
Keyword(s):  
High Power ◽  
X Band

scholarly journals High-Power X -Band Relativistic Backward-Wave Oscillator with Exceptional Synchronous Regime Operating at an Exceptional Point

2021 ◽  
Vol 15 (6) ◽  
Author(s):  
Tarek Mealy ◽  
Ahmed F. Abdelshafy ◽  
Filippo Capolino
Keyword(s):  
High Power ◽  
Exceptional Point ◽  
Backward Wave Oscillator ◽  
Wave Oscillator ◽  
X Band ◽  
Backward Wave

scholarly journals Development and high-power testing of an X -band dielectric-loaded power extractor

2020 ◽  
Vol 23 (1) ◽  
Author(s):  
Jiahang Shao ◽  
Chunguang Jing ◽  
Eric Wisniewski ◽  
Gwanghui Ha ◽  
Manoel Conde ◽  
...  
Keyword(s):  
High Power ◽  
X Band ◽  
Power Testing

scholarly journals Cell/Module Integration Technology with Wire-Embedded EVA Sheet

2021 ◽  
Vol 11 (9) ◽  
pp. 4170
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Donggun Lim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Power ◽  
Short Circuit ◽  
Optical Loss ◽  
Manufacturing Cost ◽  
Power Module ◽  
Manufacturing Method ◽  
Front Electrode ◽  
The Wire

Silicon wafers are crucial for determining the price of solar cell modules. To reduce the manufacturing cost of photovoltaic devices, the thicknesses of wafers are reduced. However, the conventional module manufacturing method using the tabbing process has a disadvantage in that the cell is damaged because of the high temperature and pressure of the soldering process, which is complicated, thus increasing the process cost. Consequently, when the wafer is thinned, the breakage rate increases during the module process, resulting in a lower yield; further, the module performance decreases owing to cracks and thermal stress. To solve this problem, a module manufacturing method is proposed in which cells and wires are bonded through the lamination process. This method minimizes the thermal damage and mechanical stress applied to solar cells during the tabbing process, thereby manufacturing high-power modules. When adopting this method, the front electrode should be customized because it requires busbarless solar cells different from the existing busbar solar cells. Accordingly, the front electrode was designed using various simulation programs such as Griddler 2.5 and MathCAD, and the effect of the diameter and number of wires in contact with the front finger line of the solar cell on the module characteristics was analyzed. Consequently, the efficiency of the module manufactured with 12 wires and a wire diameter of 0.36 mm exhibited the highest efficiency at 20.28%. This is because even if the optical loss increases with the diameter of the wire, the series resistance considerably decreases rather than the loss of the short-circuit current, thereby improving the fill factor. The characteristics of the wire-embedded ethylene vinyl acetate (EVA) sheet module were confirmed to be better than those of the five busbar tabbing modules manufactured by the tabbing process; further, a high-power module that sufficiently compensated for the disadvantages of the tabbing module was manufactured.

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