scholarly journals Properties of Thermally Evaporated Titanium Dioxide as an Electron-Selective Contact for Silicon Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 678 ◽  
Author(s):  
Changhyun Lee ◽  
Soohyun Bae ◽  
HyunJung Park ◽  
Dongjin Choi ◽  
Hoyoung Song ◽  
...  

Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation. This study focuses on characterizing an electron-selective passivated contact layer with this oxidized method. Subsequently, the SiO2/TiO2 stack was examined using high-resolution transmission electron microscopy. The phase and chemical composition of the titanium oxide films were analyzed using X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The passivation quality of each layer was confirmed by measuring the carrier lifetime using quasi-steady-state photoconductance, providing an implied open circuit voltage of 644 mV. UV–vis spectroscopy and UV photoelectron spectroscopy analyses demonstrated the band alignment and carrier selectivity of the TiO2 layers. Band offsets of ~0.33 and ~2.6 eV relative to the conduction and valence bands, respectively, were confirmed for titanium oxide and the silicon interface.

1994 ◽  
Vol 239 (1) ◽  
pp. 117-122 ◽  
Author(s):  
Li-Jian Meng ◽  
Carlos P. Moreira de Sá ◽  
M.P. dos Santos

2005 ◽  
Vol 288-289 ◽  
pp. 311-314 ◽  
Author(s):  
Yong Xiang Leng ◽  
Ping Yang ◽  
Ji Yong Chen ◽  
Lan Xin Xu ◽  
An Sha Zhao ◽  
...  

Surface modification has shown great potential for improving the hemocompatibility of biomedical materials and devices. In this paper we describe our work on improving blood compatibility with Ti–O thin films prepared by unbalanced DC magnetron sputtering. The structure and surface chemical and physical properties of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), SEM, sheet resistance tests, and Hall effect measurements. The sheet resistance of the titanium oxide samples increased with oxygen pressure and shows a sharp increase when only TiO2 exists in the films. The band gap, carrier density and sheet resistance of the titanium oxide films synthesized at different oxygen pressure are different. These properties affect blood compatibility significantly. We suggest that the semiconducting nature of n-type Ti–O films with bandgap 3.0~3.2 eV, sheet resistance greater than 1 Ω.cm and carrier density of about 1.17 x 1016cm-2 leads to their excellent blood compatibility.


Polymers ◽  
2021 ◽  
Vol 13 (23) ◽  
pp. 4099
Author(s):  
Gabriela Lewińska ◽  
Piotr Jeleń ◽  
Jarosław Kanak ◽  
Łukasz Walczak ◽  
Robert Socha ◽  
...  

The publication presents the results of investigations of the influence of dye dopant on the electrooptical and morphology properties of a polymeric donor:acceptor mixture. Ternary thin films (polymer:dye:fullerene) were investigated for potential application as an active layer in organic solar cells. The aim of the research is to determine the effect of selected dye materials (dye D131, dye D149, dye D205, dye D358) on the three-component layer and their potential usefulness as an additional donor in ternary cells, based on P3HT donor and PC71BM acceptor. UV–vis spectroscopy studies were performed, and absorption and luminescence spectra were determined. Ellipsometry parameters for single dye and ternary layers have been measured. The analyses were performed using the Raman spectroscopy method, and the Raman spectra of the mixtures and single components have been determined. Organic layers were prepared and studied using scanning electron microscope and atomic force microscope. For dyes, ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy studies were carried out and the ternary system was presented and analyzed in terms of energy bands.


Author(s):  
Suresh Thapa ◽  
Rajendra Paudel ◽  
Miles D. Blanchet ◽  
Patrick T. Gemperline ◽  
Ryan B. Comes

AbstractEmergent behavior at oxide interfaces has driven research in complex oxide films for the past 20 years. Interfaces have been engineered for applications in spintronics, topological quantum computing, and high-speed electronics with properties not observed in bulk materials. Advances in synthesis have made the growth of these interfaces possible, while X-ray photoelectron spectroscopy (XPS) studies have often explained the observed interfacial phenomena. This review discusses leading recent research, focusing on key results and the XPS studies that enabled them. We describe how the in situ integration of synthesis and spectroscopy improves the growth process and accelerates scientific discovery. Specific techniques include determination of interfacial intermixing, valence band alignment, and interfacial charge transfer. A recurring theme is the role that atmospheric exposure plays on material properties, which we highlight in several material systems. We demonstrate how synchrotron studies have answered questions that are impossible in lab-based systems and how to improve such experiments in the future.


2017 ◽  
Vol 9 (30) ◽  
pp. 25278-25290 ◽  
Author(s):  
P. Naresh Kumar ◽  
Ankita Kolay ◽  
Melepurath Deepa ◽  
S. M. Shivaprasad ◽  
Avanish K. Srivastava

2011 ◽  
Vol 1321 ◽  
Author(s):  
Amornrat Limmanee ◽  
Songkiate Kittisontirak ◽  
Channarong Piromjit ◽  
Jaran Sritharathikhun ◽  
Kobsak Sriprapha

ABSTRACTWe have prepared n-type hydrogenated microcrystalline silicon oxide films (n μc-SiO:H) and investigated their structural, electrical and optical properties. Raman spectra shows that, amorphous phase of the n μc-SiO:H films tends to increase when the CO2/SiH4 ratio increases from 0 to 0.28 resulting in a reduction of the crystalline volume fraction (Xc) from 70 to 12%. Optical bandgap (E04) becomes gradually wider while dark conductivity and refractive index (n) continuously drop with increasing CO2/SiH4 ratio. The n μc-SiO:H films have been practically applied as a n layer in top cell of a-SiO:H/μc-Si:H micromorph silicon solar cells. We found that, open circuit voltage (Voc) and fill factor (FF) of the cells gradually increased, while short circuit current density (Jsc) remained almost the same value with increasing CO2/SiH4 ratio for n top layer deposition up to 0.23. The highest initial cell efficiency of 10.7% is achieved at the CO2/SiH4 ratio of 0.23. The enhancement of the Voc is supposed to be due to a reduction of reverse bias at sub cell connection (n top/p bottom interface). An increase of shunt resistance (Rsh) which is caused by a better tunnel recombination junction contributes to the improvement in the FF. Quantum efficiency (QE) results indicate no difference between the cells using n top μc-SiO:H and the cells with n top μc-Si:H layers. These results reveal that, the n μc-SiO:H films in this study do not work as an intermediate reflector to enhance light scattering inside the solar cells, but mainly play a key role to allow ohmic and low resistive electrical connection between the two adjacent cells in the micromorph silicon solar cells.


2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Tingliang Liu ◽  
Xing Zhang ◽  
Jingquan Zhang ◽  
Wenwu Wang ◽  
Lianghuan Feng ◽  
...  

Transparent ITO/ZnO and ITO/SnO2complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS) and X-ray Photoelectron Spectroscopy (XPS), and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV), which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase ofEff, FF,Voc, andIscby the introduction of ITO/ZnO and ITO/SnO2layers in CdTe solar cells.


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