scholarly journals Interface Study of ITO/ZnO and ITO/SnO2Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Tingliang Liu ◽  
Xing Zhang ◽  
Jingquan Zhang ◽  
Wenwu Wang ◽  
Lianghuan Feng ◽  
...  

Transparent ITO/ZnO and ITO/SnO2complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS) and X-ray Photoelectron Spectroscopy (XPS), and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV), which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase ofEff, FF,Voc, andIscby the introduction of ITO/ZnO and ITO/SnO2layers in CdTe solar cells.

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.


Polymers ◽  
2021 ◽  
Vol 13 (23) ◽  
pp. 4099
Author(s):  
Gabriela Lewińska ◽  
Piotr Jeleń ◽  
Jarosław Kanak ◽  
Łukasz Walczak ◽  
Robert Socha ◽  
...  

The publication presents the results of investigations of the influence of dye dopant on the electrooptical and morphology properties of a polymeric donor:acceptor mixture. Ternary thin films (polymer:dye:fullerene) were investigated for potential application as an active layer in organic solar cells. The aim of the research is to determine the effect of selected dye materials (dye D131, dye D149, dye D205, dye D358) on the three-component layer and their potential usefulness as an additional donor in ternary cells, based on P3HT donor and PC71BM acceptor. UV–vis spectroscopy studies were performed, and absorption and luminescence spectra were determined. Ellipsometry parameters for single dye and ternary layers have been measured. The analyses were performed using the Raman spectroscopy method, and the Raman spectra of the mixtures and single components have been determined. Organic layers were prepared and studied using scanning electron microscope and atomic force microscope. For dyes, ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy studies were carried out and the ternary system was presented and analyzed in terms of energy bands.


1997 ◽  
Vol 469 ◽  
Author(s):  
S. A. McHugo ◽  
M. Imaizumi

ABSTRACTIt is critical to understand the behavior of metallic impurities in polycrystalline silicon used for solar cells. These impurities significantly increase the minority carrier recombination rate and, in turn, degrade cell performance. Impurity gettering is a commonly used method to remove these impurities from the material, however, past work has suggested that impurity release from structural defects drastically limits the gettering process. Presently, there is only a limited understanding of impurity release from structural defects. In this work, a correlation between structural defects and the location of metal impurities in as-grown material is established and the release of nickel and copper from structural defects in polycrystalline silicon was studied in as-grown material and after sequential thermal treatments which dissolve the impurities into the silicon matrix. Synchrotron-based x-ray fluorescence impurity mapping with spatial resolution of ≈ 1μm, was used to determine impurity distributions after each thermal treatment.


Energies ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 678 ◽  
Author(s):  
Changhyun Lee ◽  
Soohyun Bae ◽  
HyunJung Park ◽  
Dongjin Choi ◽  
Hoyoung Song ◽  
...  

Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation. This study focuses on characterizing an electron-selective passivated contact layer with this oxidized method. Subsequently, the SiO2/TiO2 stack was examined using high-resolution transmission electron microscopy. The phase and chemical composition of the titanium oxide films were analyzed using X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The passivation quality of each layer was confirmed by measuring the carrier lifetime using quasi-steady-state photoconductance, providing an implied open circuit voltage of 644 mV. UV–vis spectroscopy and UV photoelectron spectroscopy analyses demonstrated the band alignment and carrier selectivity of the TiO2 layers. Band offsets of ~0.33 and ~2.6 eV relative to the conduction and valence bands, respectively, were confirmed for titanium oxide and the silicon interface.


2019 ◽  
Vol 65 (5 Sept-Oct) ◽  
pp. 554
Author(s):  
C.A. Hernández-Gutiérrez ◽  
O. Vigil Galán ◽  
S. Melo ◽  
E. Rodriguez ◽  
Yu Kudriavtsev

The deposition of a high resistivity transparent (HRT) oxide between a transparent conductive oxide (TCO) and the window CdS has demonstrated the improvement of performance of CdS/CdTe solar cells, fabricated in the superstrate-configuration.  In this work the influence of the pneumatic spray pyrolysis (PSP) and magnetron sputtering techniques on the properties TCO/SnO2/CdS structure through the deposition of the intermediate SnO2 between the commercial conducting glass and CdS window is presented by means of X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and contact resistance, calculated using transmission line method (TLM), in order to reduce the front contact resistance in devices with superstrate-configuration. The results of this work are applicable to other solar cells in the same configuration as the recent solar cells based on the compound Sb2Se3, where the use of this type of HRT has not been studied.


2009 ◽  
Vol 16 (03) ◽  
pp. 381-386 ◽  
Author(s):  
J. B. CHU ◽  
H. B. ZHU ◽  
Z. A. WANG ◽  
Z. Q. BIAN ◽  
Z. SUN ◽  
...  

Single-phase CuInSe 2 films were grown by high vapor selenization of CuIn alloy precursors within a partially closed graphite box. The CuIn precursors were prepared using Cu x In y alloy targets with different composition rates under low vacuum level by a homemade sputtering system. The Cu and In composition rates of the used targets are 11:9, 10:10, and 9:11, respectively. The metallic precursor films were selenized using a two-step temperature profile, i.e. at 250°C and 400–500°C, respectively. The influence of the temperature at the second selenization step on the quality of the CIS absorbing layers was investigated. The CIS films were characterized by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis, and Raman spectroscopy. The deposited CIS absorbers selenized at a high temperature of 500°C for 30 min exhibited a single-phase chalcopyrite structure with a preferential orientation in the (112) direction. These layers display uniform, large, and densely packed crystals with a grain size of about 3–5 μm. Cadmium sulfide buffer layer was manufactured by chemical bath deposition method. Bilayers ZnO / ZnO : Al were prepared by RF magnetron sputtering deposition. CIS solar cells with an efficiency of about 6.5% were produced without antireflective films. The method to fabricate CIS solar cells by a combination of the low vacuum sputtering deposition and the graphite box selenization process has provided a simple control process and shown a promising potential for developing high efficient and low-cost CuInSe 2 solar cells.


Author(s):  
I-Hsuan Chen ◽  
Jung-Hsien Chang ◽  
Ren-Jie Xie ◽  
Chia-Hui Tseng ◽  
Sheng-Rong Hsieh ◽  
...  

Abstract In this study, the easy-to-operate silver mirror reaction (SMR) was used for metallizing chromatography paper. The SMR-metallized paper was characterized by water contact angle measurements, a surface profiler, X-ray photoelectron spectroscopy, UV-vis spectroscopy, X-ray diffraction, and electrical resistance measurement. The characterization results show that Ag was successfully synthesized on cellulose fibers and was electrically conductive after cyclic bending. Moreover, this SMR-metallized paper was used as electrodes for fabricating a supercapacitor. This SMR-metallized paper could be used for realizing cost-effective flexible electronics applied in on-site biochemical sensing in resource-limited settings.


Author(s):  
Sahadeb Ghosh ◽  
Mangala Nand ◽  
Rajiv Kamparath ◽  
Mukul Gupta ◽  
Devdatta M Phase ◽  
...  

Abstract Oriented thin films of β-(Ga1-xFex)2O3 have been deposited by RF magnetron sputtering on c-Al2O3 and GaN substrates. The itinerant character of Fe 3d states forming the top of the valence band (VB) of Fe substituted of β-Ga2O3 thin films has been determined from resonant photoelectron spectroscopy (RPES). Further, admixture of itinerant and localized character of these Fe 3d sates is obtained for larger binding energies i.e deeper of VB. The bottom of the conduction band (CB) for β-(Ga1-xFex)2O3 is also found to be strongly hybridized states involving Fe 3d and O 2p states as compared to that of Ga 4s in pristine β-Ga2O3. This suggests that β-Ga2O3 transforms from band like system to a charge transfer system with Fe substitution. Furthermore, the bandgap red shits with Fe composition, which has been found to be primarily related to the shift of the CB edge.


Author(s):  
Katarzyna Matras-Postolek ◽  
A. Zaba ◽  
S. Sovinska ◽  
D. Bogdal

Zinc sulphide (ZnS) and zinc selenide (ZnSe) and manganese-doped and un-doped with different morphologies from 1D do 3D microflowers were successfully fabricated in only a few minutes by solvothermal reactions under microwave irradiation. In order to compare the effect of microwave heating on the properties of obtained  nanocrystals, additionally the synthesis under conventional heating was conducted additionally in similar conditions. The obtained nanocrystals were systematically characterized in terms of structural and optical properties using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), diffuse reflectance UV-Vis spectroscopy (DR UV-Vis), Fourier-transform infrared spectroscopy (FT-IR), photoluminescence spectroscopy (PL), X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET) surface area analysis. The photocatalytic activity of ZnSe, ZnS, ZnS:Mn and ZnSe:Mn nanocrystals with different morphologies was evaluated by the degradation of methyl orange (MO) and Rhodamine 6G (R6G), respectively. The results show that Mn doped NCs samples had higher coefficient of degradation of organic dyes under ultraviolet irradiation (UV).


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