Domain structure and polarization reversal in ferroelectric lanthanum-modified lead titanate ceramics investigated by piezoresponse force microscopy

2016 ◽  
Vol 51 (8) ◽  
pp. 4061-4069 ◽  
Author(s):  
André Marino Gonçalves ◽  
Fernando Andres Londono ◽  
Ducinei Garcia ◽  
José Antonio Eiras
Keyword(s):  
Domain Structure ◽  
Lead Titanate ◽  
Piezoresponse Force Microscopy ◽  
Polarization Reversal ◽  
Force Microscopy ◽  
Titanate Ceramics

scholarly journals Structure and Dynamics of Ferroelectric Domains in Polycrystalline Pb(Fe1/2Nb1/2)O3

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1327 ◽  
Author(s):  
Ursic ◽  
Bencan ◽  
Prah ◽  
Dragomir ◽  
Malic
Keyword(s):  
Domain Wall ◽  
Ambient Temperature ◽  
Domain Structure ◽  
Domain Walls ◽  
Domain Switching ◽  
Piezoresponse Force Microscopy ◽  
Paraelectric Phase Transition ◽  
Force Microscopy ◽  
Ferroelectric Domains

A complex domain structure with variations in the morphology is observed at ambient temperature in monoclinic Pb(Fe1/2Nb1/2)O3. Using electron microscopy and piezoresponse force microscopy, it is possible to reveal micrometre-sized wedge, lamellar-like, and irregularly shaped domains. By increasing the temperature, the domain structure persists up to 80 °C, and then starts to disappear at around 100 °C due to the proximity of the ferroelectric–paraelectric phase transition, in agreement with macroscopic dielectric measurements. In order to understand to what degree domain switching can occur in the ceramic, the mobility of the domain walls was studied at ambient temperature. The in situ poling experiment performed using piezoresponse force microscopy resulted in an almost perfectly poled area, providing evidence that all types of domains can be easily switched. By poling half an area with 20 V and the other half with −20 V, two domains separated by a straight domain wall were created, indicating that Pb(Fe1/2Nb1/2)O3 is a promising material for domain-wall engineering.

scholarly journals Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
S. L. Bravina ◽  
N. V. Morozovsky ◽  
J. Costecalde ◽  
C. Soyer ◽  
D. Remiens ◽  
...  
Keyword(s):  
Piezoresponse Force Microscopy ◽  
Local Deformation ◽  
Dynamic Mode ◽  
Polarization Reversal ◽  
Si Substrate ◽  
Charge Voltage ◽  
Force Microscopy ◽  
Pzt Film ◽  
Current Voltage ◽  
Bipolar Charge

The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-film/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed by piezoresponse force microscopy. The comparison of the dependences of introduced asymmetry factors for the bipolar charge-voltage and current-voltage loops and unipolar current-voltage curves on drive voltage indicates the interconnection of ferroelectric and electrical space charge transfer asymmetries.

Domain structure in modified lead titanate ceramics

1994 ◽  
Vol 157 (1) ◽  
pp. 153-158
Author(s):  
Long Wu ◽  
Yi-Yeh Lee ◽  
Jung-Shin Chang
Keyword(s):  
Domain Structure ◽  
Lead Titanate ◽  
Titanate Ceramics

The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

2005 ◽  
Vol 902 ◽  
Author(s):  
Hong Liu ◽  
Zhaohui Pu ◽  
Zhihong Wang ◽  
Huidong Huang ◽  
Yanrong Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Sputtering ◽  
Piezoresponse Force Microscopy ◽  
Rf Magnetron Sputtering ◽  
Pyroelectric Coefficient ◽  
Pure Perovskite Structure ◽  
Force Microscopy ◽  
Xrd Patterns

AbstractLanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.

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