scholarly journals Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 5041
Author(s):  
Young Han ◽  
Kyung-Tae Kang ◽  
Byeong-Kwon Ju ◽  
Kwan Cho
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Post Treatment ◽  
Intense Pulsed Light ◽  
Transport Layer ◽  
Time Dependent ◽  
Electron Transport Layer ◽  
Zno Nps ◽  
Light Emitting

We investigated the effect of intense-pulsed light (IPL) post-treatment on the time-dependent characteristics of ZnO nanoparticles (NPs) used as an electron transport layer (ETL) of quantum-dot light-emitting diodes (QLEDs). The time-dependent characteristics of the charge injection balance in QLEDs was observed by fabrication and analysis of single carrier devices (SCDs), and it was confirmed that the time-dependent characteristics of the ZnO NPs affect the device characteristics of QLEDs. Stabilization of the ZnO NPs film properties for improvement of the charge injection balance in QLEDs was achieved by controlling the current density characteristics via filling of the oxygen vacancies by IPL post-treatment.

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
High Luminance ◽  
Light Emitting

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.

High Performance Top-Emission Quantum Dot Light-Emitting Diodes with Mg-Doped ZnO Nanoparticles Used as an Electron Transport Layer

2021 ◽  
Vol 21 (7) ◽  
pp. 3747-3752
Author(s):  
Bada Kim ◽  
Dohyeong Lee ◽  
Boram Hwang ◽  
Yebin Eun ◽  
Mi-Young Ha ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Maximum Luminance ◽  
Zno Nps ◽  
Light Emitting ◽  
Mg Doping ◽  
Doped Zno ◽  
Mg Doped

In this paper, we reported superior performance of solution-processed top-emission quantum dot light-emitting diodes (TE-QLEDs) with Mg-doped ZnO nanoparticle (NP) electron transport layer (ETL). The Mg-doped ZnO NPs were synthesized by the sol-gel method. Transmission electron microscopy (TEM) analysis of the Mg-doped ZnO NPs with 0 wt%, 5 wt%, 10 wt%, and 15 wt% Mg-doping concentrations revealed average diameters of 5.86 nm, 5.33 nm, 4.52 nm, and 4.37 nm, respectively. The maximum luminance, the current efficiency, and external quantum efficiency (EQE) were 178,561.8 cd/m2, 56.0 cd/A, and 14.43%, respectively. However, for the best performance of TE-QLED without Mg-doping in the ZnO NPs, the maximum luminance was only 101,523.4 cd/m2, the luminous efficiency was 27.8 cd/A, and the EQE was 6.91%. The improvement of the performance is attributed to the suppression of electron transfer by an increase in the energy barrier between the cathode and Mg-doped ZnO NP ETL and the reduction in the Hall mobility of electron with increasing the Mg-doping in the ZnO NPs, resulting in the enhanced charge balance in the quantum dot (QD) emitting layer (EML).

scholarly journals A Study on the Stability of TiO2 Nanoparticles as an Electron Transport Layer in Quantum Dot Light-Emitting Diodes

2021 ◽  
Vol 59 (7) ◽  
pp. 476-480
Author(s):  
Moonbon Kim ◽  
Jiwan Kim
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Tio2 Nanoparticles ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Zno Nps ◽  
Light Emitting ◽  
Tio2 Nps ◽  
Doped Tio2

We report highly efficient and robust quantum dot light-emitting diodes (QLEDs) with Li-doped TiO2 nanoparticles (NPs) as an electron transport layer (ETL). As core materials, ZnO-based inorganic NPs can enhance the performance of QLEDs due to their suitable energy level and solution processability. However, their fast electron mobility and instability in organic solvents are two main obstacles to practical display applications. The colloidal stability of TiO2 NPs in ethanol was confirmed after three day-storage, while ZnO NPs showed severe agglomeration. Inverted structure QLEDs using 3% Li-doped TiO2 NP were successfully fabricated and their optical/electrical properties were investigated. With 3% Li-doped TiO2 NPs, the charge balance in the emitting layer of the QLEDs was improved, which resulted in a maximum luminance of 159,840 cd/m2 and external quantum efficiency (EQE) of 9.12%. These results were comparable to the performance of QLEDs with commonly used ZnO NPs. Moreover, the QLEDs with the Li-doped TiO2 NPs showed more stable characteristics than those with ZnO NPs after 7 days in ambient conditions. The EQE of the QLEDs with Li-doped TiO2 NPs was reduced by only 4.9%. These results indicate that Li-doped TiO2 NPs show great promise for use as a solution based inorganic ETL for QLEDs.

scholarly journals Enhancing the performance of blue quantum-dot light-emitting diodes through the incorporation of polyethylene glycol to passivate ZnO as an electron transport layer

RSC Advances ◽  
2020 ◽  
Vol 10 (39) ◽  
pp. 23121-23127 ◽  
Author(s):  
Jun-hao Sun ◽  
Jia-hui Huang ◽  
Xu-yan Lan ◽  
Feng-chun Zhang ◽  
Ling-zhi Zhao ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Surface Defect ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Charge Balance ◽  
Defect States ◽  
Light Emitting

Highly efficient blue quantum-dot light-emitting diodes have been realized by blending PEG into ZnO nanoparticles as an electron transport layer due to regulating charge balance and passivating the surface defect states of ZnO nanoparticles.

Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer

2019 ◽  
Vol 19 (10) ◽  
pp. 6152-6157
Author(s):  
Sanghyun Lee ◽  
Junekyun Park ◽  
Jaewon Jeong ◽  
Jaehyun Kim ◽  
Juhyung Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document