Influence of Conditioning Temperature on Defects in the Double Al2O3/ZnO Layer Deposited by the ALD Method

In this work, we present the results of defects analysis concerning ZnO and Al2O3 layers deposited by atomic layer deposition (ALD) technique. The analysis was performed by the X-band electron paramagnetic resonance (EPR) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) methods. The layers were either tested as-deposited or after 30 min heating at 300 °C and 450 °C in Ar atmosphere. TEM and XPS investigations revealed amorphous nature and non-stoichiometry of aluminum oxide even after additional high-temperature treatment. EPR confirmed high number of defect states in Al2O3. For ZnO, we found the as-deposited layer shows ultrafine grains that start to grow when high temperature is applied and that their crystallinity is also improved, resulting in good agreement with XPS results which indicated lower number of defects on the layer surface.

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Transmission electron energy-loss spectroscopy study of carbon nanotubes upon high temperature treatment

Applied Physics Letters ◽

10.1063/1.1372618 ◽

2001 ◽

Vol 78 (21) ◽

pp. 3358-3360 ◽

Cited By ~ 8

Author(s):

B. W. Reed ◽

M. Sarikaya ◽

L. R. Dalton ◽

G. F. Bertsch

Keyword(s):

Carbon Nanotubes ◽

High Temperature ◽

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectroscopy ◽

Temperature Treatment ◽

High Temperature Treatment ◽

Spectroscopy Study ◽

Transmission Electron ◽

Electron Energy Loss

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Passivation of Ge Nanocrystals in SiO2

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.33 ◽

2005 ◽

Vol 108-109 ◽

pp. 33-38 ◽

Cited By ~ 2

Author(s):

Jesper Skov Jensen ◽

Tom P. Leervad Pedersen ◽

Rui Pereira ◽

Pia Bomholt ◽

Jacques Chevallier ◽

...

Keyword(s):

Electron Microscopy ◽

Rutherford Backscattering Spectrometry ◽

Temperature Treatment ◽

High Temperature Treatment ◽

Paramagnetic Resonance ◽

Transmission Electron ◽

Si Nanocrystals ◽

Potential Applications ◽

Electron Paramagnetic ◽

Ge Nanocrystals

Nanocrystals have attracted considerable attention in recent years because of their potential applications as a light source in Si technology. From theory Ge nanocrystals are expected to have better luminescence properties than Si nanocrystals. In this study we have compared Ge nanocrystals produced both in PE-CVD deposited and magnetron sputtered SiO2 doped with Ge during deposition to concentrations between 3-9 at.%, followed by high temperature treatment at temperatures between 600 and 1100°C. The nanocrystals were structurally characterized by Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and electron paramagnetic resonance (EPR). The interface of the nanocrystals was passivated by use of alnealing, while the effect of the passivation was monitored by photoluminescence (PL)

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High-Resolution Transmission Electron Microscopy Studies of Graphite Materials Prepared by High-Temperature Treatment of Unburned Carbon Concentrates from Combustion Fly Ashes

Energy & Fuels ◽

10.1021/ef800763s ◽

2009 ◽

Vol 23 (2) ◽

pp. 942-950 ◽

Cited By ~ 13

Author(s):

Miguel Cabielles ◽

Jean-Noël Rouzaud ◽

Ana B. Garcia

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Temperature ◽

High Resolution ◽

Temperature Treatment ◽

Unburned Carbon ◽

High Temperature Treatment ◽

Fly Ashes ◽

Transmission Electron

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Improvement of the Microstructure and X-ray Performance of Ultrathin Ru/C Multilayer Mirror after High Temperature Treatment

Coatings ◽

10.3390/coatings11010045 ◽

2021 ◽

Vol 11 (1) ◽

pp. 45

Author(s):

Yang Liu ◽

Qiushi Huang ◽

Runze Qi ◽

Liangxing Xiao ◽

Zhong Zhang ◽

...

Keyword(s):

High Temperature ◽

Temporal Stability ◽

Temperature Treatment ◽

High Temperature Treatment ◽

Maximum Enhancement ◽

Multilayer Mirror ◽

Long Term Storage ◽

Transmission Electron ◽

Different Temperatures ◽

Crystallographic Planes

Ru/C multilayer mirrors with a period of 2.5 nm and 150 bilayers were studied under high-temperature annealing and long-term storage. A general increase in the reflectivity was observed after annealing at different temperatures from 300 to 700 °C, during which a maximum enhancement of around 14% was obtained at 600 °C. The highest reflectance measured at 8 keV reached 69% after 600 °C annealing. This was accompanied by a 6% expansion of the layer period, which could be mainly attributed to carbon layers. The surface roughness was not affected by the annealing, whereas the polycrystallization of Ru with crystallographic planes parallel to the layer interfaces was enhanced. Combining the transmission-electron microscopy measurements, it was found that the interdiffusion at the C-on-Ru interface was significantly suppressed. The decreased interdiffusion, enhanced optical contrast, and larger multilayer period were the main reasons for the increased reflectance. The 600 °C annealed Ru/C multilayer remained intact after 13 months of storage in air, which also demonstrated significant temporal stability.

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