High-Resolution Transmission Electron Microscopy Studies of Graphite Materials Prepared by High-Temperature Treatment of Unburned Carbon Concentrates from Combustion Fly Ashes

2009 ◽  
Vol 23 (2) ◽  
pp. 942-950 ◽  
Author(s):  
Miguel Cabielles ◽  
Jean-Noël Rouzaud ◽  
Ana B. Garcia
Author(s):  
Zhanbing He ◽  
Jean-Luc Maurice ◽  
Haikun Ma ◽  
Yanguo Wang ◽  
Hua Li ◽  
...  

Quasicrystals have special crystal structures with long-range order, but without translational symmetry. Unexpectedly, carousel-like successive flippings of groups of atoms inside the ∼2 nm decagonal structural subunits of the decagonal quasicrystal Al60Cr20Fe10Si10 were directly observed using in situ high-temperature high-resolution transmission electron microscopy imaging. The observed directionally successive phason flips occur mainly clockwise and occasionally anticlockwise. The origin of these directional phason flips is analyzed and discussed.


2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Yucheng Lan ◽  
Hui Wang ◽  
Dezhi Wang ◽  
Gang Chen ◽  
Zhifeng Ren

New TEM grids coated with ultrathin amorphous films have been developed using atomic layer deposition technique. The amorphous films can withstand temperatures over in air and in vacuum when the thickness of the film is 2 nm, and up to in air when the thickness is 25 nm, which makes heating TEM grids with nanoparticles up to in air and immediate TEM observation without interrupting the nanoparticles possible. Such coated TEM grids are very much desired for applications in high-temperature high-resolution transmission electron microscopy.


Author(s):  
James R. Gallagher ◽  
Paul Boldrin ◽  
Gary B. Combes ◽  
Don Ozkaya ◽  
Dan I. Enache ◽  
...  

The effectiveness of Mg as a promoter of Co-Ru/γ-Al 2 O 3 Fischer–Tropsch catalysts depends on how and when the Mg is added. When the Mg is impregnated into the support before the Co and Ru addition, some Mg is incorporated into the support in the form of Mg x Al 2 O 3+ x if the material is calcined at 550°C or 800°C after the impregnation, while the remainder is present as amorphous MgO/MgCO 3 phases. After subsequent Co-Ru impregnation Mg x Co 3− x O 4 is formed which decomposes on reduction, leading to Co(0) particles intimately mixed with Mg, as shown by high-resolution transmission electron microscopy. The process of impregnating Co into an Mg-modified support results in dissolution of the amorphous Mg, and it is this Mg which is then incorporated into Mg x Co 3− x O 4 . Acid washing or higher temperature calcination after Mg impregnation can remove most of this amorphous Mg, resulting in lower values of x in Mg x Co 3− x O 4 . Catalytic testing of these materials reveals that Mg incorporation into the Co oxide phase is severely detrimental to the site-time yield, while Mg incorporation into the support may provide some enhancement of activity at high temperature.


2021 ◽  
Author(s):  
Boris Kulnitskiy ◽  
Vladimir Blank ◽  
Tatyana Gordeeva ◽  
Vladimir Mukhanov ◽  
Vladimir Solozhenko

Microstructure of sphalerite (3C) boron phosphide, BP, produced by self-propagated high-temperature synthesis has been studied by high-resolution transmission electron microscopy. Along with numerous twins on the {111}3C plane, layers of wurtzite (2H) polymorphic modification and previously unknown for BP rhombohedral (3R) structure were found which indicates trimorphism of BP.


Nanoscale ◽  
2021 ◽  
Vol 13 (15) ◽  
pp. 7362-7374
Author(s):  
R. Podor ◽  
V. Trillaud ◽  
G. I. Nkou Bouala ◽  
N. Dacheux ◽  
C. Ricolleau ◽  
...  

Two-grain systems formed by ThO2 nanospheres are used to study the initial stage of sintering up to 1050 °C using HT-HRTEM. The low temperature crystallite rearrangements as well as grain boundary formation and growth are observed.


2006 ◽  
Vol 911 ◽  
Author(s):  
Robert S Okojie ◽  
Xianrong Huang ◽  
Michael Dudley ◽  
Ming Zhang ◽  
Pirouz Pirouz

AbstractWe used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.


Sign in / Sign up

Export Citation Format

Share Document