scholarly journals Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

Materials ◽  
2016 ◽  
Vol 9 (10) ◽  
pp. 851 ◽  
Author(s):  
Hyeonju Lee ◽  
Xue Zhang ◽  
Jaeeun Hwang ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Electrical Characteristics ◽  
Solution Processed ◽  
Zinc Oxide Films

scholarly journals Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (8) ◽  
pp. 880 ◽  
Author(s):  
Xue Zhang ◽  
Hyeonju Lee ◽  
Jung-Hyok Kwon ◽  
Eui-Jik Kim ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Solution Processed ◽  
Low Concentration ◽  
Zinc Oxide Films ◽  
Indium Doping

Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications

2015 ◽  
Vol 11 (1) ◽  
pp. 82-87 ◽  
Author(s):  
Dong Wook Kim ◽  
Jaehoon Park ◽  
Jaeeun Hwang ◽  
Hong Doo Kim ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Films ◽  
Solution Processed ◽  
Zinc Oxide Films ◽  
Pulse Light

scholarly journals Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

2016 ◽  
Vol 17 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Sang Cheol Park ◽  
Dongwook Kim ◽  
Hyunji Shin ◽  
Do Kyoung Lee ◽  
Xue Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Uv Light ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide

Performance modification in solution-processed SnZnO thin film transistor

2010 ◽  
Vol 1247 ◽  
Author(s):  
Dong Lim Kim ◽  
Doo Na Kim ◽  
You Seung Rim ◽  
Si Joon Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Annealing Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Molar Ratio ◽  
Electrical Characteristics ◽  
Solution Processed

AbstractTin zinc oxide (SnZnO) thin film transistors (TFTs) with different component fraction fabricated by solution process were reported. Sn chloride and Zn acetate were used as precursor and the maximum annealing temperature was 500°C. The electrical characteristics of TFTs were acutely affected by the molar ratio between Sn and Zn in the lattice, and showed the highest mobility and on-to-off ratio of about 17 cm2/Vs and 2×106, respectively. The origins of the high performance were traced through both structural and electrical aspects. Sn was generally considered to offer carrier path by superposition of s orbital, but it was found that the increase of Sn fraction only below specific value in lattice contributed to increase mobility, which could be explained by the structural distortion and the defect generation. Zn atoms introduced in the lattice were necessary to control both mobility and carrier concentration. From these results, the solution-processed SnZnO TFT with high performance was suggested.

Effect of substrate temperature on sputtered indium-aluminum-zinc oxide films and thin film transistors

2019 ◽  
Vol 791 ◽  
pp. 773-778 ◽  
Author(s):  
Weidong Xu ◽  
Jianfeng Jiang ◽  
Sanjin Xu ◽  
Yu Zhang ◽  
Huayong Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Substrate Temperature ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Aluminum Zinc Oxide
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