scholarly journals Mathematical Modeling of Postcombustion in an Electric Arc Furnace (EAF)

Metals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 547
Author(s):  
Niloofar Arzpeyma ◽  
Mikael Ersson ◽  
Pär G. Jönsson

Numerical modeling was used to study the capability of postcombustion in an electric arc furnace (EAF) equipped with virtual lance burners. The CO flow rate at the molten bath surface was estimated using the off-gas data obtained close to the outlet of an EAF. Then, the effect of the secondary oxygen flow rate on postcombustion was studied. The results show a CO flow rate of 0.6 kg·s−1 and 0.8 kg·s−1 for operation modes of burner and burner + lancing. Increase of the secondary oxygen flow rates of 60% and 70% result in 17% and 7% increase in the postcombustion ratio (PCR) for the burner and burner lancing modes, respectively.

2001 ◽  
Vol 41 (10) ◽  
pp. 1146-1155 ◽  
Author(s):  
Marco Ramírez ◽  
Jonas Alexis ◽  
Gerardo Trapaga ◽  
Par Jönsson ◽  
John Mckelliget

2018 ◽  
Vol 32 (24) ◽  
pp. 1850284
Author(s):  
Xiaochan Liu ◽  
Yukai An ◽  
Zhen Lin ◽  
Jiwen Liu

The effects of oxygen partial pressure on the microstructure, electrical and photo-sensitive properties of the Sn-doped In2O3 (ITO) films deposited by different Ar–O2 flow rates (10:0.4, 10:1, 10:1.8 and 10:3) were investigated systematically by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall effect, UV-Vis and optical measurements. The XRD and SEM measurements show that the ITO film deposited at oxygen flow rate of 0.4 sccm prefers to (400) orientation and has a rough sawtooth-shaped surface. However, the ITO films deposited at oxygen flow rates of 1 sccm, 1.8 sccm and 3 sccm prefer to (222) orientation and exhibit a flat smooth surface. The conductivity, mobility and photosensitive property of ITO films are also sensitive to oxygen flow rate. The ITO film deposited at oxygen flow rate of 0.4 sccm has a high carrier concentration (up to [Formula: see text] cm[Formula: see text]) and mobility (16.7 cm2/vs), low resistivity [Formula: see text], and a long response time but good sensitivity to ultraviolet light. It can be concluded that the surface morphology plays a dominant role in sensitivity to ultraviolet light. The good sensitivity of ultraviolet light is gained from the ITO film with sawtooth-shaped surface.


2010 ◽  
Vol 50 (1) ◽  
pp. 9-16 ◽  
Author(s):  
O. J. P. González ◽  
Marco A. Ramírez-Argáez ◽  
A. N. Conejo

1980 ◽  
Vol 8 (1) ◽  
pp. 44-51 ◽  
Author(s):  
D. F. Woolner ◽  
J. Larkin

The theoretical performance of the Hudson Multivent mask is considered. A method is described of determining the flow-weighted mean inspired oxygen concentration produced by the mask. Using this method, it was found that the inspired oxygen concentration was predictable only at the 24% setting using the recommended flow rates, but that increasing the supplied-oxygen flow rates above the recommended levels resulted in the return of predictable function. At settings above 30% predictable function was found to be unlikely, whatever the supplied oxygen flow rate. Recommendations are made regarding the use of this device.


Author(s):  
Marriatyi Morsin ◽  
Suhaila Isaak ◽  
Marlia Morsin ◽  
Yusmeeraz Yusof

<p class="Abstract">A study of oxygen plasma on multilayer graphene is done with different flow rates. This is to allow a controlled amount of defect fabricated on the graphene. Results from the study showed that the intensity ratio of defect between D peak and G peak was strongly depended on the amount of oxygen flow rate thus affected the 2D band of the spectra. The inter-defect distance L<sub>D </sub>≥ 15 nm of each sample indicated that low-defect density was fabricated. The surface roughness of the multilayer graphene also increased and reduced the conductivity of the multilayer graphene.</p>


2021 ◽  
Vol 903 ◽  
pp. 91-97
Author(s):  
Pathan Parhana ◽  
M.V. Lakshmaiah

Zinc Oxide (ZnO) thin films were deposited on glass substrate by radio frequency (RF)reactive magnetron sputtering technique at variable Oxygen flow rates while Argon flow rates waskept constant. The effect of oxygen flow rate on structural, electrical, optical properties of nanostructured ZnO thin films were investigated by X-ray diffractometer, scanning eletron microscopy(SEM), Hall effect measurements and UV-Visible spectrophotometer. X-ray diffraction (XRD) datareveals films are polycrystalline hexagonal structure with (002) peak as a preferred orientation andcrystallite size was found to be in range12 nm-16 nm.The electrical resistivity of films decreasesfrom 10-1 Ω-cm to 10-2 Ω-cm. All deposited ZnO thin films shows high transmittance above 95% inthe visible range 360 nm-800 nm. The optical band gap and refractive indices have been calculatedusing UV-Vis transmission spectra. Oxygen gas flow rates found to have large impact onoptoelectronic properties of ZnO films.


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