Effect of Oxygen Flow Rate on the Characteristics of RF Sputtered ZnO Thin Films

2021 ◽  
Vol 903 ◽  
pp. 91-97
Author(s):  
Pathan Parhana ◽  
M.V. Lakshmaiah
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Flow Rates ◽  
X Ray ◽  
Effect Of Oxygen

Zinc Oxide (ZnO) thin films were deposited on glass substrate by radio frequency (RF)reactive magnetron sputtering technique at variable Oxygen flow rates while Argon flow rates waskept constant. The effect of oxygen flow rate on structural, electrical, optical properties of nanostructured ZnO thin films were investigated by X-ray diffractometer, scanning eletron microscopy(SEM), Hall effect measurements and UV-Visible spectrophotometer. X-ray diffraction (XRD) datareveals films are polycrystalline hexagonal structure with (002) peak as a preferred orientation andcrystallite size was found to be in range12 nm-16 nm.The electrical resistivity of films decreasesfrom 10-1 Ω-cm to 10-2 Ω-cm. All deposited ZnO thin films shows high transmittance above 95% inthe visible range 360 nm-800 nm. The optical band gap and refractive indices have been calculatedusing UV-Vis transmission spectra. Oxygen gas flow rates found to have large impact onoptoelectronic properties of ZnO films.

Effects of Oxygen Flow Rate on Nanostructured ZnO Thin Films

2013 ◽  
Vol 667 ◽  
pp. 333-337
Author(s):  
S. Ahmad ◽  
N.D. Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Volume Ratio ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Zno Thin Films ◽  
Average Thickness ◽  
X Ray

Zinc Oxide (ZnO) thin films were deposited on thermally oxidized SiO2 by varying the oxygen flow rate. The deposition process were done using radio frequency (RF) magnetron sputtering at various oxygen flow rate ranging from 0 to 40 sccm. The surface morphology and crystallinity were analyzed by field emission scanning electron microscopy (FESEM) and X-Ray Diffractometer (XRD) respectively. The average thickness and deposition rate decreases with an increase of oxygen content. The grain size was measured by FESEM and it was found that it is also decreasing with the increased of oxygen flow rate. The films grown with 10 sccm oxygen shows the highest (002) peak however it is expected that the sample deposited with 40 sccm oxygen exhibit the highest sensitivity toward NH3 gas due to the highest surface to volume ratio.

Effect of Oxygen Flow Rate on Surface Morphology and Optical Properties of Reactive DC Magnetron Sputtered TiO2 Thin Films

2021 ◽  
Vol 903 ◽  
pp. 51-56
Author(s):  
Lavanya Mekala ◽  
Sunita Ratnam Srirangam ◽  
Rajesh Kumar Borra ◽  
Subba Rao Thota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Effect Of Oxygen

In the present work, reactive DC magnetron sputtering method is used to deposit TiO2 thin films on glass substrates. The structural, surface morphology and optical studies of TiO2 thin films were discussed by varying the oxygen flow rates from 1 to 4 sccm. X-ray diffraction patterns of TiO2 thin films show amorphous nature. The surface morphological and elemental composition of TiO2 thin films were examined by field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. From the optical absorption spectra, the shifting of absorption edge towards the longer wavelength leads to the decrement of optical bandgap from 3.48 to 3.19 eV with an increase of oxygen flow rate from 1 to 4 sccm.

scholarly journals Growth, Structural and Optical Properties of DC Reactive Magnetron Sputtered TixSi1-xO2 Thin Films

2015 ◽  
Vol 57 ◽  
pp. 182-190
Author(s):  
Suresh Addepalli ◽  
Uthanna Suda
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Binding Energies ◽  
Core Level ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Flow Rates ◽  
X Ray ◽  
Deposited Films

Thin films of TixSi1-xO2 were deposited on silicon and quartz substrates by DC reactive magnetron sputtering of Ti80Si20 composite target at different oxygen flow rates. The deposited films were characterized for their chemical composition and core level binding energies using X-ray photoelectron spectroscope, surface morphology with scanning electron microscope, optical absorption with spectrophotometer and refractive index by ellipsometer. The thickness of the deposited films was 100 nm. The oxygen content in the films increased with increase of oxygen flow rate. Films with Ti0.7Si0.3O2 were achieved at oxygen flow rates ≥ 8 sccm. X-ray diffraction studies indicated the grown of amorphous films. X-ray photoelectron spectra of the films showed the characteristic core level binding energies of TixSi1-xO2. Optical band gap of the films decreased from 4.15 to 4.07 eV with increase of oxygen flow rate from 2 sccm to 10 sccm respectively.

scholarly journals Studies on effect of oxygen flow rate in textured grain growth of ZnO thin films

2015 ◽  
Vol 73 ◽  
pp. 012105
Author(s):  
Deepu Thomas ◽  
Sunil C Vattappalam ◽  
Sunny Mathew ◽  
Simon Augustine
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Zno Thin Films ◽  
Effect Of Oxygen

Effect of Oxygen Flow Rate on the Memristive Behavior of Reactively Sputtered TiO2 Thin Films

2014 ◽  
Vol 1024 ◽  
pp. 64-67 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Muhamad Uzair Shamsul ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Switching Behavior ◽  
Memristive Behavior ◽  
Effect Of Oxygen

The paper presents the memristive behavior of sputtered titania thin films on ITO substrate. Titania thin films were deposited by RF magnetron sputtering method while varying the oxygen flow rate of (O2/ (O2 + Ar) x100 = 10, 20 and 30 %) during deposition process. The effect of oxygen flow rate to the structural properties was studied including the physical thickness, and also the effect towards switching behavior. It was found that sample deposited at 20 % oxygen flow rate gave better memristive behavior compared to other samples, with larger ROFF/RON ratio of 9. The characterization of memristive behavior includes the effect of electroforming process and successive of I-V measurements are discussed.

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

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