scholarly journals Effectiveness of Electrical and Optical Detection at Pixel Circuit on Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 135
Author(s):  
Fu-Ming Tzu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Optical Resolution ◽  
Automatic Data ◽  
Optical Inspection ◽  
Time Delay And Integration ◽  
Pixel Circuit ◽  
Data Acquisition Program ◽  
Substrate Defects ◽  
Automatic Data Acquisition

The paper presents a typology of electrical open and short defects on thin-film transistors (TFT) using an electrical tester and automatic optical inspection (AOI). The experiment takes the glass 8.5th generation to detect the electrical characteristics engaged with time delay and integration (TDI) charged-coupled-devices (CCDs), a fast line-scan, and a review CCD with five sets of magnification lenses for further inspection. An automatic data acquisition program (ADAP) controls the open/short (O/S) sensor, TDI-CCD, and motor device for machine vision and statistics of substrate defects simultaneously. Furthermore, the quartz mask installed on AOI verified its optical resolution; a TDI-CCD can grab an image of a moving object during transfers of the charge in synchronous scanning with the object that is significant.

A-IGZO Thin-film Transistors Integrated AMOLED Pixel Circuit with Data Line Controlled Light-emitting

2018 ◽  
Vol 39 (11) ◽  
pp. 1549-1556
Author(s):  
王兰兰 WANG Lan-lan ◽  
鲁 力 LU Li ◽  
于天宝 YU Tian-bao ◽  
廖聪维 LIAO Cong-wei ◽  
黄生祥 HUANG Sheng-xiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Emitting ◽  
Data Line ◽  
Pixel Circuit

scholarly journals An AMOLED Pixel Circuit Based on LTPS Thin-film Transistors with Mono-Type Scanning Driving

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 574
Author(s):  
Jianyuan Ke ◽  
Lianwen Deng ◽  
Liying Zhen ◽  
Qing Wu ◽  
Congwei Liao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Emitting Diode ◽  
Monte Carlo Analysis ◽  
Internal Resistance ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Ir Drop ◽  
Control Functions ◽  
Pixel Circuit

Using low-temperature poly-silicon thin-film transistors (LTPS TFTs) as a basis, a pixel circuit for an active matrix organic light-emitting diode (AMOLED) with narrow bezel displays was developed. The pixel circuit features mono-type scanning signals, elimination of static power lines, and pixel-integrated emitting control functions. Therefore, gate driver circuits of the display bezel can be simplified efficiently. In addition, the pixel circuit has a high-resolution design due to an increase of the pulse width of the scan signal to extend the threshold voltage and internal–resistance drop (IR drop) detection period. Further, regarding the influences of process–voltage–temperature (PVT) variation in the pixel circuit, comparison investigations were carried out with the proposed circuit and other pixel circuits with mono-type scanning signals using Monte Carlo analysis. The feasibility of the proposed pixel circuit is well demonstrated, as the current variations can be reduced to 2.1% for the supplied power reduced from 5 V to 3 V due to IR drop, and the current variation is as low as 10.6% with operating temperatures from –40 degrees to 85 degrees.

scholarly journals A novel current-biased voltage-programmed pixel circuit with low temperature polycrystalline silicon thin film transistors for AMOLED

2015 ◽  
Vol 12 (24) ◽  
pp. 20150899-20150899
Author(s):  
Yiling Ding ◽  
Li Tian ◽  
Zunkai Huang ◽  
Qi Zhang ◽  
Ning Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Pixel Circuit

Simulation of Amorphous-InGaZnO Thin Film Transistors Driven OLED Pixel Circuit

2014 ◽  
Vol 35 (10) ◽  
pp. 1264-1268
Author(s):  
张丽 ZHANG Li ◽  
许玲 XU Ling ◽  
董承远 DONG Cheng-yuan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Pixel Circuit ◽  
Amorphous Ingazno
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