scholarly journals Evaluation of Crystalline Volume Fraction of Laser-Annealed Polysilicon Thin Films Using Raman Spectroscopy and Spectroscopic Ellipsometry

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 999
Author(s):  
Jeongsang Pyo ◽  
Bohae Lee ◽  
Han-Youl Ryu
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Laser Annealing ◽  
Continuous Wave ◽  
Volume Fraction ◽  
Three Dimensional ◽  
Green Laser ◽  
Blue Laser ◽  
Good Crystallinity

We investigated the crystallinities of poly silicon (poly Si) annealed via green laser annealing (GLA) with a 532-nm pulsed laser and blue laser annealing (BLA) with 450-nm continuous-wave lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in an amorphous silicon (a-Si) thin film, and GLA and BLA experiments were conducted based on the thermal simulation results. The crystallinity of annealed poly Si samples was analyzed using Raman spectroscopy and spectroscopic ellipsometry. To evaluate the degree of crystallization for the annealed samples quantitatively, the measured spectra of laser-annealed poly Si were fitted to those of crystalline Si and a-Si, and the crystal volume fraction (fc) of the annealed poly Si sample was determined. Both the Raman spectroscopy and ellipsometry showed consistent results on fc. The fc values were found to reach >85% for optimum laser power of GLA and BLA, showing good crystallinity of the laser-annealed poly Si thin films comparable to thermal furnace annealing.

Comparative study on crystallinity of laser-annealed polysilicon thin films for various laser sources

2021 ◽  
Vol 11 (7) ◽  
pp. 1239-1244
Author(s):  
Jeongsang Pyo ◽  
Han-You Ryu
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Continuous Wave ◽  
Pulsed Laser ◽  
Silicon Layer ◽  
Thermal Simulation ◽  
Blue Laser ◽  
Silicon Thin Films ◽  
Near Ultraviolet ◽  
Simulation Results

In this study, we compared the crystallinities of polycrystalline silicon thin films annealed using green laser annealing (GLA) with a 532-nm pulsed laser, near-ultraviolet laser annealing (NULA) with a 355-nm pulsed laser, and blue laser diode annealing (BLDA) with 450-nm continuous-wave (CW) lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in a 100 nm-thick amorphous silicon layer, and optimum laser conditions were determined for each laser annealing. GLA, NULA, and BLDA experiments were conducted based on the thermal simulation results, and the crystallinity of the annealed samples was quantitatively analyzed via spectroscopic ellipsometry. The analysis results indicated that GLA and BLDA resulted in good crystallinity that was comparable to the result of furnace annealing, whereas NULA resulted in a relatively poor crystal quality. The difference in the crystallinities produced by the annealing lasers could be explained using the thermal simulation results. This study provides an insight into the optimum laser annealing conditions for realizing high-quality poly-silicon thin films.

Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing

2007 ◽  
Vol 46 (No. 8) ◽  
pp. L164-L166 ◽  
Author(s):  
Yuta Sugawara ◽  
Yukiharu Uraoka ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Green Laser ◽  
Silicon Thin Films

Crystallinity Evaluation by Microwave Photoconductivity Decay in Double-Layered Polycrystalline Silicon Thin Films Crystallized by Solid Green Laser Annealing

2007 ◽  
Vol 46 (12) ◽  
pp. 7607-7611 ◽  
Author(s):  
Yuta Sugawara ◽  
Yukiharu Uraoka ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Green Laser ◽  
Silicon Thin Films ◽  
Photoconductivity Decay

Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs

2011 ◽  
Vol 314-316 ◽  
pp. 1926-1929
Author(s):  
Mu Chun Wang ◽  
Hsin Chia Yang
Keyword(s):  
Laser Annealing ◽  
Continuous Wave ◽  
Green Laser ◽  
Excimer Laser Annealing ◽  
Good Reliability ◽  
Hot Carrier ◽  
Carrier Effect ◽  
Drain Region ◽  
Hot Carrier Effect

Continuous-wave green laser-crystallized (CLC) single-grainlike polycrystalline silicon n-channel thin-film transistors (poly-Si n-TFTs) exhibit the higher electron mobility and turn-on current than excimer laser annealing (ELA) poly-Si n-TFTs. Furthermore, high drain voltage accelerates the flowing electrons in n-type channel, and hence the energized electrons possibly cause a serious damage near the drain region and deteriorate the source/drain (S/D) current. Using this good reliability metrology to verify the quality of CLC n-TFTs was adopted. The degradation mechanisms of S/D current for CLC poly-Si n-TFTs were firstly investigated by measuring the gate-to-drain overlap capacitor, and with the drain-avalanche hot-carrier stresses at 2VGS = VDS =14 V and 2VGS =VDS =18 V in temperature environment, 25 oC and 50 oC.

Rapid laser annealing of Cu(In,Ga)Se2 thin films by using a continuous wave Nd:YAG laser (λ0= 532 nm)

2017 ◽  
Vol 70 (8) ◽  
pp. 809-815 ◽  
Author(s):  
Nam-Hoon Kim ◽  
Pil Ju Ko ◽  
Geum-Bae Cho ◽  
Chan Il Park
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm ◽  
Rapid Laser Annealing

Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids

Nanoscale ◽  
2015 ◽  
Vol 7 (30) ◽  
pp. 12868-12877 ◽  
Author(s):  
M. M. Giangregorio ◽  
W. Jiao ◽  
G. V. Bianco ◽  
P. Capezzuto ◽  
A. S. Brown ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Charge Transfer ◽  
Work Function ◽  
Spectroscopic Ellipsometry ◽  
Cvd Graphene ◽  
Non Invasive

Charge transfer between CVD graphene and thin films and nanoparticles of various sizes of Al, Ga, Au, Cu and Ag was probed by various corroborating non-invasive approaches of KPFM, Raman spectroscopy and plasmonic spectroscopic ellipsometry.

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