scholarly journals Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1153
Author(s):  
Qian Zhang ◽  
Xu Li ◽  
Jianyun Zhao ◽  
Zhifei Sun ◽  
Yong Lu ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Compressive Stress ◽  
Vapor Phase ◽  
Hydride Vapor Phase Epitaxy ◽  
The Other ◽  
Aln Film ◽  
The One

We have investigated the effect of high-temperature nitridation and buffer layer on the semi-polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy (HVPE). It is found the high-temperature nitridation and buffer layer at 1300 °C are favorable for the formation of single (10–13) AlN film. Furthermore, the compressive stress of the (10–13) single-oriented AlN film is smaller than polycrystalline samples which have the low-temperature nitridation layer and buffer layer. On the one hand, the improvement of (10–13) AlN crystalline quality is possibly due to the high-temperature nitridation that promotes the coalescence of crystal grains. On the other hand, as the temperature of nitridation and buffer layer increases, the contents of N-Al-O and Al-O bonds in the AlN film are significantly reduced, resulting in an increase in the proportion of Al-N bonds.

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

2015 ◽  
Vol 60 (6) ◽  
pp. 889-894
Author(s):  
I. A. Belogorohov ◽  
A. A. Donskov ◽  
S. N. Knyazev ◽  
Yu. P. Kozlova ◽  
V. F. Pavlov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Epitaxial Layers

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

2013 ◽  
Vol 10 (3) ◽  
pp. 362-365 ◽  
Author(s):  
N. Coudurier ◽  
R. Boichot ◽  
V. Fellmann ◽  
A. Claudel ◽  
E. Blanquet ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

scholarly journals XX.—On Dimethyl-Thetine and its Derivatives

1878 ◽  
Vol 28 (2) ◽  
pp. 571-582 ◽  
Author(s):  
Crum Brown ◽  
E. A. Letts
Keyword(s):  
Low Temperature ◽  
The Other ◽  
Similar Relation ◽  
The One ◽  
Elementary Textbooks

The analogies existing between elements belonging to one “family,” such, for instance, as the nitrogen family or the sulphur family, have long been recognised, and are pointed out and insisted upon even in elementary textbooks; but the very important analogies existing between substances of different quantivalence are apt to be forgotten or overlooked. For illustrations of such analogies we may point to boron and silicon, elements closely resembling one another in themselves and also in their compounds,—differing, indeed, in little else but that the one is triad and the other tetrad. A similar relation exists between gold and platinum.The elementary substances, sulphur and phosphorus, have many points of similarity: both fuse at a comparatively low temperature, both are transformed by heat into amorphous insoluble modifications, and both have anomalous vapour densities.

HVPE GaN Growth on 4H SiC and Die Dicing

2016 ◽  
Vol 858 ◽  
pp. 1198-1201
Author(s):  
Alexander Usikov ◽  
Sergey Kurin ◽  
Iosif Barash ◽  
Alexander D. Roenkov ◽  
Andrei Antipov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Crack Formation ◽  
Mechanical Strain ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Laser Scribing ◽  
Higher Temperature

Hydride Vapor Phase Epitaxy (HVPE) was used to grow 1-4 μm thick undoped GaN layers on 4H-SiC and sapphire substrates. To adjust mechanical strain and crack formation in the GaN/SiC samples, the AlGaN-based buffer layer was grown at low temperature (920-980°C) and the GaN layer was grown at a higher temperature (1000-1040°C). Laser scribing through the GaN layer or the SiC substrate was applied to fabricate dies from the GaN/SiC and GaN/sapphire samples. The laser irradiation passing through the GaN layer to the sapphire substrate or through the SiC substrate to the GaN layer, along two orthogonal directions created a net of micro-cavities in sapphire and melted grooves in SiC that promote easy breakage of the sample into rectangular dies.

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