scholarly journals Realization of Three-Dimensionally MEMS Stacked Comb Structures for Microactuators Using Low-Temperature Multi-Wafer Bonding with Self-Alignment Techniques in CMOS-Compatible Processes

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1481
Author(s):  
Adrian J. T. Teo ◽  
King Ho Holden Li

A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V.

2007 ◽  
Vol 51 (10) ◽  
pp. 1391-1397 ◽  
Author(s):  
Leo Petrossian ◽  
Seth J. Wilk ◽  
Punarvasu Joshi ◽  
Sahar Hihath ◽  
Jonathan D. Posner ◽  
...  

1999 ◽  
Author(s):  
Fan-Gang Tseng ◽  
Gang Zhang ◽  
Uri Frodis ◽  
Adam Cohen ◽  
Florian Mansfeld ◽  
...  

Abstract EFAB (“Electrochemical FABrication”) is a new micromachining process utilizing an innovative “Instant Masking” (IM) technique to electrochemically deposit an unlimited number of metal layers for microfabrication. Through this approach, high-aspect-ratio microstructures with arbitrary 3-D geometry can be rapidly and automatically batch-fabricated at low temperature (< 60 °C) using an inexpensive desktop machine. IC-MEMS integration can also be carried out by this low temperature process.


RSC Advances ◽  
2018 ◽  
Vol 8 (59) ◽  
pp. 33600-33613 ◽  
Author(s):  
Suhee Kang ◽  
Joonyoung Jang ◽  
Rajendra C. Pawar ◽  
Sung-Hoon Ahn ◽  
Caroline Sunyong Lee

The engineered high aspect ratio of Fe2O3 nanorods coated with g-C3N4 demonstrates z-scheme mechanism, showing the best performance in 4-nitrophenol photodegradation and H2 evolution.


2004 ◽  
Author(s):  
Francisco J. Blanco ◽  
Maria Agirregabiria ◽  
Maria Tijero ◽  
Javier Berganzo ◽  
Jorge Garcia ◽  
...  

2014 ◽  
Vol 53 (6) ◽  
pp. 068007 ◽  
Author(s):  
Daeseok Lee ◽  
Jiyong Woo ◽  
Sangsu Park ◽  
Euijun Cha ◽  
Sangheon Lee ◽  
...  

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