scholarly journals A High-Frequency-Compatible Miniaturized Bandpass Filter with Air-Bridge Structures Using GaAs-Based Integrated Passive Device Technology

Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 463 ◽  
Author(s):  
Zhi-Ji Wang ◽  
Eun-Seong Kim ◽  
Jun-Ge Liang ◽  
Tian Qiang ◽  
Nam-Young Kim
Keyword(s):  
Return Loss ◽  
Bandpass Filter ◽  
Spiral Inductor ◽  
Chip Area ◽  
Passive Device ◽  
Quality Signals ◽  
Bridge Structures ◽  
Chip Size ◽  
The Right ◽  
Device Technology

This paper reports on the use of gallium arsenide-based integrated passive device technology for the implementation of a miniaturized bandpass filter that incorporates an intertwined circle-shaped spiral inductor and an integrated center-located capacitor. Air-bridge structures were introduced to the outer inductor and inner capacitor for the purpose of space-saving, thereby yielding a filter with an overall chip area of 1178 μm × 970 μm. Thus, not only is the chip area minimized, but the magnitude of return loss is also improved as a result of selective variation of bridge capacitance. The proposed device possesses a single passband with a central frequency of 1.71 GHz (return loss: 32.1 dB), and a wide fractional bandwidth (FBW) of 66.63% (insertion loss: 0.50 dB). One transmission zero with an amplitude of 43.42 dB was obtained on the right side of the passband at 4.48 GHz. Owing to its miniaturized chip size, wide FBW, good out-band suppression, and ability to yield high-quality signals, the fabricated bandpass filter can be implemented in various L-band applications such as mobile services, satellite navigation, telecommunications, and aircraft surveillance.

scholarly journals Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1932
Author(s):  
Jian Chen ◽  
Zhi-Ji Wang ◽  
Bao-Hua Zhu ◽  
Eun-Seong Kim ◽  
Nam-Young Kim
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Return Loss ◽  
Satellite Communication ◽  
Bandpass Filter ◽  
Physical Structure ◽  
Center Frequency ◽  
Fractional Bandwidth ◽  
Bridge Structures ◽  
Chip Size

This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into an approximate octagonal outer metal track to provide a miniaturized chip size of 0.021 × 0.021 λ0 (0.8 × 0.8 mm2) for the BPF. The QFN-packaged GaAs-based bandpass filter was used to protect the device from moisture and achieve good thermal and electrical performances. An equivalent circuit was modeled to analyze the BPF. A description of the manufacturing process is presented to elucidate the physical structure of the IPD-based BPF. Measurements were performed on the proposed single band BPF using a center frequency of 2.21 GHz (return loss of 26.45 dB) and a 3-dB fractional bandwidth (FBW) of 71.94% (insertion loss of 0.38 dB). The transmission zero is located at the 6.38 GHz with a restraint of 30.55 dB. The manufactured IPD-based BPF can play an excellent role in various S-band applications, such as a repeater, satellite communication, and radar, owing to its miniaturized chip size and high performance.

Millimeter-Wave Dual-Band Bandpass Filter With Large Bandwidth Ratio Using GaAs-Based Integrated Passive Device Technology

2021 ◽  
Vol 42 (4) ◽  
pp. 493-496
Author(s):  
Guangxu Shen ◽  
Wenjie Feng ◽  
Wenquan Che ◽  
Yongrong Shi ◽  
Yiming Shen
Keyword(s):  
Millimeter Wave ◽  
Bandpass Filter ◽  
Dual Band ◽  
Passive Device ◽  
Large Bandwidth ◽  
Device Technology

scholarly journals A Microfabricated Bandpass Filter with Coarse-Tuning and Fine-Tuning Ability Based on IPD Process and PCB Artwork

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 123
Author(s):  
Junzhe Shen ◽  
Tian Qiang ◽  
Minjia Gao ◽  
Yangchuan Ma ◽  
Junge Liang ◽  
...  
Keyword(s):  
Printed Circuit Board ◽  
Bandpass Filter ◽  
Fine Tuning ◽  
Circuit Board ◽  
Center Frequency ◽  
Spiral Inductor ◽  
Chip Area ◽  
Transmission Zero ◽  
Capacitance Variation ◽  
Zero Frequency

In this paper, a bandpass filter (BPF) was developed utilizing GaAs-based integrated passive device technology which comprises an asymmetrical spiral inductor and an interleaved array capacitor, possessing two tuning modes: coarse-tuning and fine-tuning. By altering the number of layers and radius of the GaAs substrate metal spheres, capacitance variation from 0.071 to 0.106 pF for coarse-tuning, and of 0.0015 pF for fine-tuning, can be achieved. Five air bridges were employed in the asymmetrical spiral inductor to save space, contributing to a compact chip area of 0.015λ0 × 0.018λ0. The BPF chip was installed on the printed circuit board artwork with Au bonding wire and attached to a die sink. Measured results demonstrate an insertion loss of 0.38 dB and a return loss of 21.5 dB at the center frequency of 2.147 GHz. Furthermore, under coarse-tuning mode, variation in the center frequency from 1.956 to 2.147 GHz and transmission zero frequency from 4.721 to 5.225 GHz can be achieved. Under fine-tuning mode, the minimum tuning value and the average tuning value of the proposed BPF can be accurate to 1.0 MHz and 4.7 MHz for the center frequency and 1.0 MHz and 12.8 MHz for the transmission zero frequency, respectively.

Sign in / Sign up

Export Citation Format

Share Document