scholarly journals Ta Doping Effect on Structural and Optical Properties of InTe Thin Films

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1887
Author(s):  
Chunmin Liu ◽  
Yafei Yuan ◽  
Xintong Zhang ◽  
Jing Su ◽  
Xiaoxiao Song ◽  
...  

The objective of this work was to study the influence of Ta doping on the structural, transmittance properties, linear absorption parameter, and nonlinear absorption properties of InTe thin films. The as-deposited samples with different Ta doping concentrations were prepared by a magnetron co-sputtering technique and then annealed in nitrogen atmosphere. Structural investigations by X-ray diffraction revealed the tetragonal structure of InTe samples and that the crystallinity decreases with increasing Ta doping concentration. Further structural analysis by Raman spectra also showed good agreement with X-ray diffraction results. The Ta doping concentration and sample thickness determined by energy-dispersive X-ray spectroscopy and scanning electron microscopy increased as Ta dopant increased. In addition, X-ray photoelectron spectroscopic was carried out to analyze the chemical states of the elements. UV–VIS–NIR transmittance spectra were applied to study the transmittance properties and calculate the linear absorption coefficient. Due to Burstein–Moss effect, the absorption edge moved to shorter wavelengths. Meanwhile, the values of band gap were found to increase from 1.71 ± 0.02 eV to 1.85 ± 0.01 eV with the increase of Ta doping concentration. By performing an open aperture Z-scan technique, we found that all Ta-doped InTe samples exhibited two-photon absorption behaviors. The nonlinear optical absorption parameters, such as modulation depth, two-photon absorption coefficient, and two-photon absorption cross-section, decrease with increasing Ta concentration, whereas the damage threshold increases from 176 ± 0.5 GW/cm2 to 242 ± 0.5 GW/cm2. These novel properties show the potential for applications in traditional optoelectronic devices and optical limiters.

2015 ◽  
Vol 71 (9) ◽  
pp. 783-787 ◽  
Author(s):  
Rafael E. Rodríguez-Lugo ◽  
Neudo Urdaneta ◽  
Bruno Pribanic ◽  
Vanessa R. Landaeta

Orange rectangular blocks suitable for X-ray diffraction analysis were obtained for the previously reported [Ahmad & Bano (2011).Int. J. ChemTech Res.3, 1470–1478] title chalcone, C15H14ClNOS. This solid-emissive chalcone exhibits a planar structure and the bond parameters are compared with related compounds already described in the literature. The determination of the structure of this chalcone is quite relevant because it will play an important role in theoretical calculations to investigate potential two-photon absorption processes and could also be useful for studying the interaction of such compounds with a biological target.


2012 ◽  
Vol 82 ◽  
pp. 25-31 ◽  
Author(s):  
Alfredo Franco ◽  
Jorge A. García-Macedo ◽  
Jeffrey I. Zink

Mesostructured SiO2 films functionalized with the azo-chromophore Disperse Red 1 were synthesized by sol-gel method. The mesostructured long-range order in the films was determined by X-Ray Diffraction. The azo-chromophores in the films work as nano-impellers through their photo-induced trans-cis reversible isomerization. When the films are doped, they are able to control the release of the dopant by all-optical processes. We used the dye laser Rhodamine 6G as dopant, its very distinctive luminescence around 550 nm allows to follow the release. Polarized green and infrared laser light were used as pump sources to direct the movement of the nano-impellers. 299 nm light was used as a probe to induce the Rhodamine 6G luminescence, which was measured as function of the pumping time with a photomultiplier coupled to a monochromator. The results corresponding to the green and to the infrared pumping sources are compared in order to determine the feasibility to photo-control the nano-impellers movement through a two-photon absorption process.


2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.


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