scholarly journals Equivalent Circuit Model of an Optomechanical MEMS Electric Field Strength Sensor

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 712
Author(s):  
Andreas Kainz ◽  
Wilfried Hortschitz ◽  
Harald Steiner ◽  
Michael Stifter ◽  
Franz Keplinger
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Field Measurements ◽  
Circuit Model ◽  
First Results ◽  
Parasitic Effects ◽  
Electric Field Measurements

We present a simple equivalent circuit model for the transfer function of an optomechanical MEMS transducer capable of distortion-free electric field strength measurements. This model allows not only to qualitatively understand the characteristics of the transducer but also takes into account parasitic effects and material properties. Such parasitic effects have been observed while evaluating the first results of electric field measurements performed with the sensor. The model helped to identify and diminish these parasitic effects.

scholarly journals Electric field measurements on Viking: First results

1987 ◽  
Vol 14 (4) ◽  
pp. 435-438 ◽  
Author(s):  
L. P. Block ◽  
C.-G. Fälthammar ◽  
P.-A. Lindqvist ◽  
G. Marklund ◽  
F. S. Mozer ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Measurements ◽  
First Results ◽  
Electric Field Measurements

SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching

2012 ◽  
Vol 717-720 ◽  
pp. 1097-1100 ◽  
Author(s):  
Shiro Hino ◽  
Naruhisa Miura ◽  
Akihiko Furukawa ◽  
Shoyu Watanabe ◽  
Yukiyasu Nakao ◽  
...  
Keyword(s):  
Electric Field ◽  
Equivalent Circuit ◽  
High Speed ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Turn On ◽  
Model Based ◽  
Switching Losses ◽  
High Speed Switching

High speed switching is desired to reduce switching losses of SiC-MOSFETs. In order to realize SiC-MOSFETs capable of high speed switching, we numerically evaluated the electric field induced in SiC-MOSFETs during switching using an equivalent circuit model. Based on the evaluation, we designed a SiC-MOSFET, which successfully demonstrated high speed switching with a dV/dt of over 70 V/ns.

Equivalent Circuit Model for the Electric Field Sensitivity of a Magnetic Search Coil of Space Plasma

2015 ◽  
Vol 15 (3) ◽  
pp. 1680-1689 ◽  
Author(s):  
Mitsunori Ozaki ◽  
Satoshi Yagitani ◽  
Ken Takahashi ◽  
Tomohiko Imacih ◽  
Hiroki Koji ◽  
...  
Keyword(s):  
Electric Field ◽  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Space Plasma ◽  
Circuit Model ◽  
Search Coil ◽  
Field Sensitivity

Optical Measurement of the Electric Field Strength in a Gel Insulator

2016 ◽  
Vol 136 (10) ◽  
pp. 1420-1421
Author(s):  
Yusuke Tanaka ◽  
Yuji Nagaoka ◽  
Hyeon-Gu Jeon ◽  
Masaharu Fujii ◽  
Haruo Ihori
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Optical Measurement

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

2012 ◽  
Vol 132 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Maruyama ◽  
Muneki Nakada ◽  
Makoto Mita ◽  
Takuya Takahashi ◽  
Hiroyuki Fujita ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Comb Drive ◽  
Optical Scanner
Sign in / Sign up

Export Citation Format

Share Document