SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching

2012 ◽  
Vol 717-720 ◽  
pp. 1097-1100 ◽  
Author(s):  
Shiro Hino ◽  
Naruhisa Miura ◽  
Akihiko Furukawa ◽  
Shoyu Watanabe ◽  
Yukiyasu Nakao ◽  
...  
Keyword(s):  
Electric Field ◽  
Equivalent Circuit ◽  
High Speed ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Turn On ◽  
Model Based ◽  
Switching Losses ◽  
High Speed Switching

High speed switching is desired to reduce switching losses of SiC-MOSFETs. In order to realize SiC-MOSFETs capable of high speed switching, we numerically evaluated the electric field induced in SiC-MOSFETs during switching using an equivalent circuit model. Based on the evaluation, we designed a SiC-MOSFET, which successfully demonstrated high speed switching with a dV/dt of over 70 V/ns.

Equivalent-circuit model based on mathematical analysis for multilayer chip inductors

2008 ◽  
Vol 2 (4) ◽  
pp. 378-382 ◽  
Author(s):  
B.-H. Choi ◽  
M.-G. Kim ◽  
Z.-J. Jin ◽  
T.-Y. Yun ◽  
H. Sun
Keyword(s):  
Equivalent Circuit ◽  
Mathematical Analysis ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Model Based

Equivalent Circuit Model-Based RAS Design

2017 ◽  
pp. 19-25
Author(s):  
Hema Singh ◽  
Ebison Duraisingh Daniel J ◽  
Harish Singh Rawat ◽  
Reshma George
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Model Based

Equivalent Circuit Model for the Electric Field Sensitivity of a Magnetic Search Coil of Space Plasma

2015 ◽  
Vol 15 (3) ◽  
pp. 1680-1689 ◽  
Author(s):  
Mitsunori Ozaki ◽  
Satoshi Yagitani ◽  
Ken Takahashi ◽  
Tomohiko Imacih ◽  
Hiroki Koji ◽  
...  
Keyword(s):  
Electric Field ◽  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Space Plasma ◽  
Circuit Model ◽  
Search Coil ◽  
Field Sensitivity
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