scholarly journals Plasma Generator with Dielectric Rim and FSS Electrode for Enhanced RCS Reduction Effect

Sensors ◽  
2021 ◽  
Vol 21 (24) ◽  
pp. 8486
Author(s):  
Taejoo Oh ◽  
Changseok Cho ◽  
Wookhyun Ahn ◽  
Jong-Gwan Yook ◽  
Jangjae Lee ◽  
...  

In this study, a method was experimentally verified for further reducing the radar cross-section (RCS) of a two-dimensional planar target by using a dielectric rim in a dielectric barrier discharge (DBD) plasma generator using a frequency selective surface (FSS) as an electrode. By designing the frequency selective surface such that the passbands of the radar signal match, it is possible to minimize the effect of the conductor electrode, in order to maximize the RCS reduction effect due to the plasma. By designing the FSS to be independent of the polarization, the effect of RCS reduction can be insensitive to the polarization of the incoming wave. Furthermore, by introducing a dielectric rim between the FSS electrode and the target, an additional RCS reduction effect is achieved. By fabricating the proposed plasma generator, an RCS reduction effect of up to 6.4 dB in X-band was experimentally verified.

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 476
Author(s):  
Umer Farooq ◽  
Adnan Iftikhar ◽  
Muhammad Farhan Shafique ◽  
Muhammad Saeed Khan ◽  
Adnan Fida ◽  
...  

This paper presents a highly compact frequency-selective surface (FSS) that has the potential to switch between the X-band (8 GHz–12 GHz) and C-band (4 GHz–8 GHz) for RF shielding applications. The proposed FSS is composed of a square conducting loop with inward-extended arms loaded with curved extensions. The symmetric geometry allows the RF shield to perform equally for transverse electric (TE), transverse magnetic (TM), and 45° polarizations. The unit cell has a dimension of 0.176 λ0 and has excellent angular stability up to 60°. The resonance mechanism was investigated using equivalent circuit models of the shield. The design of the unit element allowed incorporation of PIN diodes between adjacent elements for switching to a lower C-band spectrum at 6.6 GHz. The biasing network is on the bottom layer of the substrate to avoid effects on the shielding performance. A PIN diode configuration for the switching operation was also proposed. In simulations, the PIN diode model was incorporated to observe the switchable operation. Two prototypes were fabricated, and the switchable operation was demonstrated by etching copper strips on one fabricated prototype between adjacent unit cells (in lieu of PIN diodes) as a proof of the design prototypes. Comparisons among the results confirmed that the design offers high angular stability and excellent performance in both bands.


2016 ◽  
Vol 13 (16) ◽  
pp. 20160567-20160567 ◽  
Author(s):  
In-Gon Lee ◽  
Yoon-Jae Kim ◽  
Yong-Bae Park ◽  
Heung-Jae Chun ◽  
Ic-Pyo Hong

Author(s):  
Muhammad Bilal ◽  
Rashid Saleem ◽  
Faisal Ahmad Khan ◽  
Asim Quddus ◽  
Muhammad Farhan Shafique

2015 ◽  
Vol 61 (3) ◽  
pp. 559-567 ◽  
Author(s):  
Garima Bharti ◽  
Kumud Ranjan Jha ◽  
Ghanshyam Singh ◽  
Rajeev Jyoti

2015 ◽  
Vol 63 (3) ◽  
pp. 1014-1021 ◽  
Author(s):  
Mojtaba Safari ◽  
Cyrus Shafai ◽  
Lotfollah Shafai

2015 ◽  
Vol 16 (2) ◽  
pp. 281
Author(s):  
Tariq Rahim ◽  
Jiodong Xu

A low profile multi layer miniaturized unit cell frequency selective surface (FSS) with second-order band-pass response is design. The metallic layers in the form of capacitive patches and inductive grids are separated by dielectric substrates. The non-resonant sub-wavelength unit cells with unit cell dimensions and periodicities on the order of 0.15λ. The overall thickness of approximately 0.03λ is designed which is useful at lower frequencies with long wavelengths. The FSS exhibit a stable frequency response to different angles of incidence and polarizations. The analysis and synthesis of the FSS is done using equivalent circuit method and simulated using CST microwave studio at X-band.


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