Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

Abstract In large bandgap semiconductors and insulators, the threshold energies for e–h pair production and ionization damage can lie above the vacuum level. For low energy imaging, a window is then opened whose width is potentially sensitive to local changes in work function, doping level, or acidity. Recent progress and future opportunities for damage-free imaging of these properties using low energy electrons are discussed in the light of the underlying physics, as well as of recent instrumental developments in low energy electron microscopy (LEEM), environmental scanning electron microscopy (ESEM), photoelectron emission microscopy (PEEM), scanned probe microscopy (SPM), and projection electron microscopy.

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Investigation of the Displacement Threshold of Si in 4H SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.481 ◽

2006 ◽

Vol 527-529 ◽

pp. 481-484 ◽

Cited By ~ 1

Author(s):

W. Sullivan ◽

John W. Steeds

Keyword(s):

Electron Microscope ◽

Low Temperature ◽

Electron Energy ◽

Transmission Electron Microscope ◽

Low Energy ◽

Electron Dose ◽

Displacement Threshold ◽

Transmission Electron ◽

Low Energy Electrons ◽

Low Temperature Photoluminescence

Samples of 4H SiC, both n- and p-doped, have been irradiated with low-energy electrons in a transmission electron microscope. The dependence of the silicon vacancy-related V1 ZPL doublet (~860nm) on electron energy and electron dose has been investigated by low temperature photoluminescence spectroscopy. Furthermore, this luminescence centre has been studied across a broad range of samples of various doping levels. Some annealing characteristics of this centre are reported.

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Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy

Journal of Applied Physics ◽

10.1063/1.4989891 ◽

2017 ◽

Vol 122 (11) ◽

pp. 114901 ◽

Cited By ~ 4

Author(s):

Y. Okuno ◽

S. Okuda ◽

M. Akiyoshi ◽

T. Oka ◽

M. Harumoto ◽

...

Keyword(s):

Solar Cells ◽

Estimation Method ◽

Threshold Energy ◽

Displacement Threshold ◽

Radiation Degradation

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Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose

Acta Physica Sinica ◽

10.7498/aps.60.098110 ◽

2011 ◽

Vol 60 (9) ◽

pp. 098110

Author(s):

Lan Mu-Jie ◽

Wu Yi-Yong ◽

Hu Jian-Min ◽

He Shi-Yu ◽

Yue Long ◽

...

Keyword(s):

Solar Cells ◽

Radiation Damage ◽

Displacement Damage ◽

Damage Dose

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Computer Simulation of Displacement Damage in Silicon Carbide

MRS Proceedings ◽

10.1557/proc-851-nn7.7 ◽

2004 ◽

Vol 851 ◽

Cited By ~ 1

Author(s):

R. Devanathan ◽

F. Gao ◽

W. J. Weber

Keyword(s):

Silicon Carbide ◽

Radiation Effects ◽

Threshold Energy ◽

High Energy ◽

Dynamics Simulation ◽

Displacement Damage ◽

Energy Cascades ◽

Displacement Threshold ◽

Atom Energy ◽

Shed Light

ABSTRACTWe have performed molecular dynamics simulation of displacement events on silicon and carbon sublattices in silicon carbide for displacement doses ranging from 0.005 to 0.5 displacements per atom. Our results indicate that the displacement threshold energy is about 21 eV for C and 35 eV for Si, and amorphization can occur by accumulation of displacement damage regardless of whether Si or C is displaced. In addition, we have simulated defect production in high-energy cascades as a function of the primary knock-on atom energy and observed features that are different from the case of damage accumulation in Si. These systematic studies shed light on the phenomenon of non-ionizing energy loss that is relevant to understanding space radiation effects in semiconductor devices.

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Threshold Energy Effects in Secondary Electron Emission

Microscopy and Microanalysis ◽

10.1017/s1431927602000521 ◽

2000 ◽

Vol 6 (4) ◽

pp. 291-296 ◽

Cited By ~ 20

Author(s):

A. Howie

Keyword(s):

Electron Microscopy ◽

Secondary Electron Emission ◽

Threshold Energy ◽

Environmental Scanning Electron Microscopy ◽

Low Energy ◽

Environmental Scanning ◽

Scanned Probe Microscopy ◽

Low Energy Electrons ◽

Bandgap Semiconductors ◽

Threshold Energies

AbstractIn large bandgap semiconductors and insulators, the threshold energies for e–h pair production and ionization damage can lie above the vacuum level. For low energy imaging, a window is then opened whose width is potentially sensitive to local changes in work function, doping level, or acidity. Recent progress and future opportunities for damage-free imaging of these properties using low energy electrons are discussed in the light of the underlying physics, as well as of recent instrumental developments in low energy electron microscopy (LEEM), environmental scanning electron microscopy (ESEM), photoelectron emission microscopy (PEEM), scanned probe microscopy (SPM), and projection electron microscopy.

Download Full-text