Investigation of the Displacement Threshold of Si in 4H SiC
2006 ◽
Vol 527-529
◽
pp. 481-484
◽
Keyword(s):
Samples of 4H SiC, both n- and p-doped, have been irradiated with low-energy electrons in a transmission electron microscope. The dependence of the silicon vacancy-related V1 ZPL doublet (~860nm) on electron energy and electron dose has been investigated by low temperature photoluminescence spectroscopy. Furthermore, this luminescence centre has been studied across a broad range of samples of various doping levels. Some annealing characteristics of this centre are reported.
1996 ◽
Vol 54
◽
pp. 300-301
2018 ◽
Vol 344
◽
pp. 58-61
◽
2001 ◽
Vol 7
(2)
◽
pp. 211-219
◽
1993 ◽
Vol 67
(2)
◽
pp. 181-192
◽
2016 ◽
pp. 326-327
2005 ◽
Vol 109
(1)
◽
pp. 19-23
◽
2007 ◽
Vol 539-543
◽
pp. 4866-4871
◽