Effects of acid diffusion and resist molecular size on line edge roughness for chemically amplified resists in EUV lithography: Computational study

2021 ◽  
Author(s):  
Masanori Koyama ◽  
Kyohei Imai ◽  
Masamitsu SHIRAI ◽  
Yoshihiko HIRAI ◽  
Masaaki YASUDA
Keyword(s):  
Computational Study ◽  
Molecular Size ◽  
Line Edge Roughness ◽  
Acid Diffusion ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
Edge Roughness ◽  
On Line ◽  
Chemically Amplified Resists

Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness

2007 ◽  
Vol 46 (9B) ◽  
pp. 6187-6190 ◽  
Author(s):  
Hiroki Yamamoto ◽  
Takahiro Kozawa ◽  
Akinori Saeki ◽  
Kazumasa Okamoto ◽  
Seiichi Tagawa ◽  
...  
Keyword(s):  
Polymer Structure ◽  
Line Edge Roughness ◽  
Acid Diffusion ◽  
Edge Roughness ◽  
On Line

Formulation of trade-off relationships between resolution, line edge roughness, and sensitivity in sub-10 nm half-pitch region for chemically amplified extreme ultraviolet resists

2021 ◽  
Author(s):  
Takahiro KOZAWA
Keyword(s):  
Extreme Ultraviolet ◽  
Numerical Aperture ◽  
Line Edge Roughness ◽  
Chemical Gradient ◽  
Trade Off ◽  
Chemically Amplified ◽  
Optical Images ◽  
Euv Lithography ◽  
Edge Roughness ◽  
The Relationship

Abstract The manufacturing of semiconductor devices using extreme ultraviolet (EUV) lithography started in 2019. A high numerical aperture (NA) tool under development is capable of resolving 8 nm line-and-space optical images and will extend the application of EUV lithography. However, resist materials have not been yet applicable to the production with 8 nm resolution. In this study, the relationships among the half-pitch of line-and-space patterns (resolution), chemical gradient [an indicator of line edge roughness (LER)], and sensitivity were investigated in the sub-10 nm half-pitch region for chemically amplified EUV resists. The chemical gradient was simulated on the basis of their sensitization and reaction mechanisms. The relationship was formulated as a function of total sensitizer concentration (the sum of photoacid generator and photodecomposable quencher concentrations) and the thermalization distance of secondary electrons. The effect of thermalized electrons was well incorporated into the trade-off relationships between resolution, LER, and sensitivity.

scholarly journals Heavy metal incorporated helium ion active hybrid non-chemically amplified resists: Nano-patterning with low line edge roughness

AIP Advances ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 085314 ◽  
Author(s):  
Pulikanti Guruprasad Reddy ◽  
Neha Thakur ◽  
Chien-Lin Lee ◽  
Sheng-Wei Chien ◽  
Chullikkattil P. Pradeep ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Line Edge Roughness ◽  
Chemically Amplified ◽  
Edge Roughness ◽  
Helium Ion ◽  
Chemically Amplified Resists ◽  
Nano Patterning
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