Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes
Keyword(s):
X Ray
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Abstract The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device with oxygen plasma treatment has a relatively more inhomogeneous barrier height.
2011 ◽
Vol 11
(11)
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pp. 3031-3035
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2010 ◽
Vol 114
(46)
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pp. 14854-14859
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2018 ◽
Vol 65
(4)
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pp. 207-210
2017 ◽
Vol 724
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pp. 348-352
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