scholarly journals PREPARATION AND CHARACTERIZATION OF METAL ORGANIC CHEMICAL VAPOUR DEPOSITED COPPER ZINC SULPHIDE THIN FILMS USING SINGLE SOLID SOURCE PRECURSORS

2019 ◽  
Vol 4 (1) ◽  
pp. 11-22
Author(s):  
Joseph Onyeka EMEGHA ◽  
◽  
John DAMISA ◽  
Frank Ochuko-oghene EFE ◽  
Bolutife OLOFINJANA ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour ◽  
Zinc Sulphide ◽  
Organic Chemical ◽  
Metal Organic ◽  
Copper Zinc

Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapour deposition

2019 ◽  
Vol 683 ◽  
pp. 128-134 ◽  
Author(s):  
Adelaida Huerta-Barberà ◽  
Esther de Prado ◽  
Maria del Carmen Martínez-Tomás ◽  
Saïd Agouram ◽  
Elias Muñoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Morphological Characterization ◽  
Organic Chemical ◽  
Rich Region ◽  
Metal Organic

scholarly journals Electrical Properties of Semiconducting Copper Zinc Sulphide Thin Films

2021 ◽  
Vol 22 (1) ◽  
Author(s):  
Joseph Onyeka Emegha ◽  
Bolutife Olofinjana ◽  
Kingsley Eghonghon Ukhurebor ◽  
Joseph Taye Adegbite ◽  
Marcus Adebola Eleruja
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Temperature ◽  
Chemical Vapour ◽  
Soda Lime ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Chemical ◽  
Temperature Range ◽  
Copper Zinc

The electrical properties of metal-organic-chemical-vapour-deposited copper zinc sulphide (Cu-Zn-S) thin films on soda-lime substrates were studied. The films produced were characterized in terms of their electrical properties employing the Four-point probe procedure at a temperature range of 370 to 470°C. The electrical properties (resistivity and conductivity) of the deposited copper zinc sulphide films were systematically studied in terms of the deposition parameters of concentration and deposition temperature. The conductivity was in the interval of 5.48 to 8.0 × 10-1 (Ω.cm)-1. Activation energies of 0.54 and 0.29 eV in the deposition temperature range were estimated. The high resistive property of the films re-emphasized the potential use of these materials as active semiconductors for optoelectronic device applications.

scholarly journals Synthesis and Characterization of Metal Organic Chemical Vapour Deposited Copper Titanium Oxide (Cu-Ti-O) Thin Films from Single Solid Source Precursor

2013 ◽  
Vol 04 (12) ◽  
pp. 1-6 ◽  
Author(s):  
Oladepo Fasakin ◽  
Marcus Adebola Eleruja ◽  
Olumide Oluwole Akinwunmi ◽  
Bolutife Olofinjana ◽  
Emmanuel Ajenifuja ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Chemical Vapour ◽  
Synthesis And Characterization ◽  
Organic Chemical ◽  
Metal Organic

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Sign in / Sign up

Export Citation Format

Share Document