scholarly journals Electrical Properties of Semiconducting Copper Zinc Sulphide Thin Films

2021 ◽  
Vol 22 (1) ◽  
Author(s):  
Joseph Onyeka Emegha ◽  
Bolutife Olofinjana ◽  
Kingsley Eghonghon Ukhurebor ◽  
Joseph Taye Adegbite ◽  
Marcus Adebola Eleruja

The electrical properties of metal-organic-chemical-vapour-deposited copper zinc sulphide (Cu-Zn-S) thin films on soda-lime substrates were studied. The films produced were characterized in terms of their electrical properties employing the Four-point probe procedure at a temperature range of 370 to 470°C. The electrical properties (resistivity and conductivity) of the deposited copper zinc sulphide films were systematically studied in terms of the deposition parameters of concentration and deposition temperature. The conductivity was in the interval of 5.48 to 8.0 × 10-1 (Ω.cm)-1. Activation energies of 0.54 and 0.29 eV in the deposition temperature range were estimated. The high resistive property of the films re-emphasized the potential use of these materials as active semiconductors for optoelectronic device applications.

2019 ◽  
Vol 4 (1) ◽  
pp. 11-22
Author(s):  
Joseph Onyeka EMEGHA ◽  
◽  
John DAMISA ◽  
Frank Ochuko-oghene EFE ◽  
Bolutife OLOFINJANA ◽  
...  

Author(s):  
Joseph Onyeka EMEGHA ◽  
Chukwudi Mcdonald OKAFOR ◽  
Kingsley Eghonghon UKHUREBOR

Thin films of copper-zinc sulphide (CxZn1-xS) have been deposited by metal-organic chemical vapour deposition (MOCVD) technique at 400 °C on soda-lime substrates. The films contained copper dithiocarbamate and zinc dithiocarbamate of various concentrations. The effect of the precursor’s concentration was investigated using Fourier transforms infrared (FTIR) spectroscopy and UV-Vis Spectrophotometer. The precursors’ FTIR spectrums have the characteristics of copper sulphide and zinc sulphide absorption bands below 800 cm-1. The optical properties for all the samples were studied by reading the absorbance and transmittance spectra in the range of 300 - 900 nm. The results indicate direct bandgap energy that ranged between 2.20 to 3.42 eV. The films were found to have a very high transmittance in the visible and near-infrared regions and an average reflectance of about 0.14 in the same regions. Optical constants like refractive index, extinction coefficient, and optical conductivity were estimated as a function of photon energy. The various properties exhibited by the films indicate that the films can find application in various optoelectronic devices.


2011 ◽  
Vol 130-134 ◽  
pp. 1491-1494
Author(s):  
Xin Dong ◽  
Jin Wang ◽  
Hui Wang ◽  
Zhi Feng Shi ◽  
Long Zhao

NiZnO thin films had been fabricated on c-plane sapphire substrates using photo-assisted metal organic chemical vapour deposition system. The crystal quality of the films had been improved greatly comparing to the results in earlier reports. The crystal structure analysis indicated the NiZnO kept the basic wurtzite structure until the content of Ni attained 0.18. The crystal and electrical properties of the films showed the content of Ni had an important effect on the properties of NiZnO films.


2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  

1994 ◽  
Vol 356 ◽  
Author(s):  
V. A. C. Haanappel ◽  
H. D. van Corbach ◽  
T. Fransen ◽  
P. J. Gellings

AbstractAmorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low pressure (0.17 kPa (1.25 torr)).The effect of deposition temperature (200 − 380 °C), growth rate, film thickness, and post-deposition thermal treatment on the mechanical properties was studied. The experiments were performed with a scanning-scratch tester. The experiments are based on the estimation of the film adhesion to the substrate by determining a critical load, Lc: the load where the film starts to spall or to delaminate.The best mechanical properties were obtained with unannealed samples. After thermal annealing the critical load decreases. Regarding the unannealed samples, the critical load increased with increasing film thickness. The deposition temperature and the growth rate had no effect on the critical load.


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