Highly sensitive infrared detector based on a two-dimensional heterojunction

2021 ◽  
Vol 14 (1) ◽  
pp. 1-13
Author(s):  
ZHANG Jin-yue ◽  
◽  
LU Jun-peng ◽  
NI Zhen-hua
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Prashanth Gopalan ◽  
Yunshan Wang ◽  
Berardi Sensale-Rodriguez

AbstractWhile terahertz spectroscopy can provide valuable information regarding the charge transport properties in semiconductors, its application for the characterization of low-conductive two-dimensional layers, i.e., σs <  < 1 mS, remains elusive. This is primarily due to the low sensitivity of direct transmission measurements to such small sheet conductivity levels. In this work, we discuss harnessing the extraordinary optical transmission through gratings consisting of metallic stripes to characterize such low-conductive two-dimensional layers. We analyze the geometric tradeoffs in these structures and provide physical insights, ultimately leading to general design guidelines for experiments enabling non-contact, non-destructive, highly sensitive characterization of such layers.


1997 ◽  
Vol 65 (3) ◽  
pp. 535-537 ◽  
Author(s):  
Masaki Kobayashi ◽  
B. Devaraj ◽  
Masashi Usa ◽  
Yukina Tanno ◽  
Motohiro Takeda ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.


Author(s):  
Yufeng Shan ◽  
Ziwei Yin ◽  
Yi Zhang ◽  
Changyi Pan ◽  
Huiyong Deng ◽  
...  

2020 ◽  
Vol 8 (41) ◽  
pp. 21882-21882
Author(s):  
Woo Chul Ko ◽  
Min-Sung Kim ◽  
Yong Jung Kwon ◽  
Jeehun Jeong ◽  
Won Rae Kim ◽  
...  

Correction for ‘Two-dimensional semiconducting covalent organic nanosheets for highly sensitive and stable NO2 sensing under humid conditions’ by Woo Chul Ko et al., J. Mater. Chem. A, 2020, 8, 19246–19253, DOI: 10.1039/D0TA07066A.


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