Thermal Property Evaluation of a Silicon Nitride Thin-Film Using the Dual-Wavelength Pump-Probe Technique

2019 ◽  
Vol 29 (9) ◽  
pp. 547-552 ◽  
Author(s):  
Yun Young Kim
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Thermal Property ◽  
Dual Wavelength ◽  
Pump Probe ◽  
Probe Technique ◽  
Property Evaluation

Study of all-optical switching properties of zinc phthalocyanine thin film by pump-probe technique

2017 ◽  
Vol 95 ◽  
pp. 100-104 ◽  
Author(s):  
Anil Kumar ◽  
Rajesh Punia ◽  
Arun K. Gupta ◽  
Devendra Mohan ◽  
Kirti Kapoor
Keyword(s):  
Thin Film ◽  
Optical Switching ◽  
Zinc Phthalocyanine ◽  
Pump Probe ◽  
Probe Technique ◽  
All Optical ◽  
All Optical Switching

scholarly journals Sideband pump-probe technique resolves nonlinear modulation response of PbS/CdS quantum dots on a silicon nitride waveguide

APL Photonics ◽  
2018 ◽  
Vol 3 (1) ◽  
pp. 016101 ◽  
Author(s):  
Mirco Kolarczik ◽  
Christian Ulbrich ◽  
Pieter Geiregat ◽  
Yunpeng Zhu ◽  
Laxmi Kishore Sagar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Cds Quantum Dots ◽  
Pump Probe ◽  
Modulation Response ◽  
Probe Technique ◽  
Nonlinear Modulation

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Investigation on nonlinear dynamics of ZnO using time-resolved pump-probe technique with phase object

2011 ◽  
Author(s):  
Lirong Ge ◽  
Min Shui ◽  
Xiao Jin ◽  
Zhongguo Li ◽  
Yinglin Song
Keyword(s):  
Nonlinear Dynamics ◽  
Phase Object ◽  
Time Resolved ◽  
Pump Probe ◽  
Probe Technique

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon
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