Growth and characterization of InAs quantum dots with low-density and long emission wavelength

2008 ◽  
Vol 6 (1) ◽  
pp. 71-73 ◽  
Author(s):  
李林 Lin Li ◽  
刘国军 Guojun Liu ◽  
李占国 Zhanguo Li ◽  
李 梅 Mei Li ◽  
王晓华 Xiaohua Wang
Keyword(s):  
Quantum Dots ◽  
Emission Wavelength ◽  
Low Density ◽  
Inas Quantum Dots

Ultra-low density InAs quantum dots

2013 ◽  
Vol 47 (10) ◽  
pp. 1324-1327 ◽  
Author(s):  
V. G. Dubrovskii ◽  
G. E. Cirlin ◽  
P. A. Brunkov ◽  
U. Perimetti ◽  
N. Akopyan
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Inas Quantum Dots

Dual-comb-based asynchronous pump-probe measurement with an ultrawide temporal dynamic range for characterization of photo-excited InAs quantum dots

2020 ◽  
Vol 13 (6) ◽  
pp. 062003
Author(s):  
Akifumi Asahara ◽  
Yuto Arai ◽  
Tomohiro Saito ◽  
Junko Ishi-Hayase ◽  
Kouichi Akahane ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Dynamic Range ◽  
Probe Measurement ◽  
Temporal Dynamic ◽  
Pump Probe ◽  
Inas Quantum Dots

Extremely Low Density InAs Quantum Dots with No Wetting Layer

2007 ◽  
Vol 24 (4) ◽  
pp. 1025-1028 ◽  
Author(s):  
Huang She-Song ◽  
Niu Zhi-Chuan ◽  
Ni Hai-Qiao ◽  
Zhan Feng ◽  
Zhao Huan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Wetting Layer ◽  
Inas Quantum Dots

Growth and Characterization of Inas Quantum Dots on Silicon

1999 ◽  
Vol 583 ◽  
Author(s):  
L. Hansen ◽  
A. Ankudinov ◽  
F. Bensing ◽  
J. Wagner ◽  
G. Ade ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
The Other ◽  
Material System ◽  
Inas Quantum Dots ◽  
New Material ◽  
The One ◽  
Insight Into

AbstractUp to 1011 cm−2 InAs quantum dots (QD) can be grown on Silicon(001) by molecular beam epitaxy. This very new material system is on the one hand interesting with regard to the integration of optoelectronics with silicon technology on the other hand it offers new insight into the formation of QDs. We report on RHEED, TEM and Raman studies about (in-) coherence of the QDs and on an according to our knowledge so far unknown dewetting transition in this material system. The results are being discussed on the basis of a thermodynamic model, assuming a liquid-like behavior of a strained adlayer.

Effects of strain and confinement on the emission wavelength of InAs quantum dots due to aGaAs1−xNxcapping layer

2005 ◽  
Vol 71 (24) ◽  
Author(s):  
O. Schumann ◽  
S. Birner ◽  
M. Baudach ◽  
L. Geelhaar ◽  
H. Eisele ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Emission Wavelength ◽  
Inas Quantum Dots

Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

2007 ◽  
Vol 301-302 ◽  
pp. 751-754 ◽  
Author(s):  
Shesong Huang ◽  
Zhichuan Niu ◽  
Haiqiao Ni ◽  
Yonghua Xiong ◽  
Feng Zhan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Wavelength Emission
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