Degradation mechanism of star sensor performance caused by radiation damage of CMOS image sensor

2020 ◽  
Vol 49 (5) ◽  
pp. 20190555
Author(s):  
冯婕 Jie Feng ◽  
李豫东 Yudong Li ◽  
文林 Lin Wen ◽  
郭旗 Qi Guo
Keyword(s):  
Radiation Damage ◽  
Degradation Mechanism ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Star Sensor ◽  
Sensor Performance

Degradation mechanism for photon transfer curve of CMOS image sensor after irradiation

2017 ◽  
Vol 25 (10) ◽  
pp. 2676-2681
Author(s):  
冯 婕 FENG Jie ◽  
李豫东 LI Yu-dong ◽  
文 林 WEN Lin ◽  
周 东 ZHOU Dong ◽  
马林东 MA Lin-dong
Keyword(s):  
Degradation Mechanism ◽  
Cmos Image Sensor ◽  
Image Sensor

scholarly journals Predicting the effect of radiation damage on dark current in a space-qualified high performance CMOS image sensor

2019 ◽  
Vol 14 (11) ◽  
pp. C11008-C11008
Author(s):  
C. Crews ◽  
M.R. Soman ◽  
D-D. Lofthouse-Smith ◽  
E.A.H. Allanwood ◽  
K.D. Stefanov ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Dark Current ◽  
High Performance ◽  
Cmos Image Sensor ◽  
Image Sensor

Study the performance of star sensor influenced by space radiation damage of image sensor

2018 ◽  
Author(s):  
Jie Feng ◽  
Yudong Li ◽  
Lin Wen ◽  
Qi Guo ◽  
Xingyao Zhang
Keyword(s):  
Radiation Damage ◽  
Space Radiation ◽  
Image Sensor ◽  
Star Sensor

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

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