Programmable Negative Differential Resistance Effects Based on Au@PPy Core-Shell Nanoparticle Arrays by Combining Inkjet Printing and Self-Assembly Techniques

2019 ◽  
Vol 35 (5) ◽  
pp. 455-456
Author(s):  
Buxing HAN ◽  
Keyword(s):  
Inkjet Printing ◽  
Self Assembly ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Core Shell ◽  
Nanoparticle Arrays

Programmable Negative Differential Resistance Effects Based on Self‐Assembled Au@PPy Core–Shell Nanoparticle Arrays

2018 ◽  
Vol 30 (35) ◽  
pp. 1802731 ◽  
Author(s):  
Jianzhong Zheng ◽  
Junchang Zhang ◽  
Zi Wang ◽  
Liubiao Zhong ◽  
Yinghui Sun ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Core Shell ◽  
Nanoparticle Arrays ◽  
Self Assembled

Negative differential resistance in GeSi core–shell transport junctions: the role of local sp2hybridization

Nanoscale ◽  
2016 ◽  
Vol 8 (35) ◽  
pp. 16026-16033 ◽  
Author(s):  
Nuo Liu ◽  
Lei Zhang ◽  
Xiaobin Chen ◽  
Xianghua Kong ◽  
Xiaohong Zheng ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Core Shell

scholarly journals Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential

2018 ◽  
Vol 52 (4) ◽  
pp. 475
Author(s):  
A.M. Mozharov ◽  
A.A. Vasiliev ◽  
A.D. Bolshakov ◽  
G.A. Sapunov ◽  
V.V. Fedorov ◽  
...  
Keyword(s):  
Numerical Calculation ◽  
Negative Differential Resistance ◽  
Current Flow ◽  
Differential Resistance ◽  
Core Shell ◽  
Strong Localization ◽  
Calculation Results ◽  
Application Potential ◽  
Negative Differential Resistance Effect ◽  
Gan Nanowire

AbstractIn this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.

High-Throughput Directed Self-Assembly of Core–Shell Ferrimagnetic Nanoparticle Arrays

Langmuir ◽  
2013 ◽  
Vol 29 (24) ◽  
pp. 7472-7477 ◽  
Author(s):  
Qiu Dai ◽  
Jane Frommer ◽  
David Berman ◽  
Kumar Virwani ◽  
Blake Davis ◽  
...  
Keyword(s):  
High Throughput ◽  
Self Assembly ◽  
Core Shell ◽  
Nanoparticle Arrays

Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

2018 ◽  
Vol 52 (4) ◽  
pp. 489-492 ◽  
Author(s):  
A. M. Mozharov ◽  
A. A. Vasiliev ◽  
A. D. Bolshakov ◽  
G. A. Sapunov ◽  
V. V. Fedorov ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Core Shell ◽  
Device Application ◽  
Application Potential

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

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