scholarly journals Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness

2021 ◽  
Vol 7 (2) ◽  
pp. 45-51
Author(s):  
Andrey N. Aleshin ◽  
Nikolay V. Zenchenko ◽  
Oleg A. Ruban
Keyword(s):  
Steady State ◽  
Oxygen Vacancy ◽  
Energy Output ◽  
Cylindrical Shape ◽  
State Equations ◽  
Conductive Filament ◽  
Mathematical Basis ◽  
Bipolar Mode ◽  
Vacancy Flux ◽  
Quantitative Calculations

The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I–V curve. The conductive filament has been considered as the highly conductive Hf ion enriched HfOx phase (x < 2) whose structure is similar to a Magneli phase. In this work a mechanism has been developed describing the formation, growth and dissolution of the HfOx phase in bipolar mode of memristor operation which provides for oxygen vacancy flux control. The conductive filament has a cylindrical shape with the radius varying within 5–10 nm. An increase in the thickness of the conductive filament leads to an increase in the area of the hysteresis loop of the I–V curve due to an increase in the energy output during memristor operation. A model has been developed which allows quantitative calculations and hence can be used for the design of bipolar memristors and assessment of memristor heat loss during operation.

Validation of a new method for determination of free fatty acid turnover

1987 ◽  
Vol 252 (3) ◽  
pp. E431-E438 ◽  
Author(s):  
J. M. Miles ◽  
M. G. Ellman ◽  
K. L. McClean ◽  
M. D. Jensen
Keyword(s):  
Steady State ◽  
Fatty Acid ◽  
Free Fatty Acid ◽  
Clearance Rate ◽  
Experimental Period ◽  
Metabolic Clearance ◽  
Metabolic Clearance Rate ◽  
State Equations ◽  
Tracer Methods

The accuracy of tracer methods for estimating free fatty acid (FFA) rate of appearance (Ra), either under steady-state conditions or under non-steady-state conditions, has not been previously investigated. In the present study, endogenous lipolysis (traced with 14C palmitate) was suppressed in six mongrel dogs with a high-carbohydrate meal 10 h before the experiment, together with infusions of glucose, propranolol, and nicotinic acid during the experimental period. Both steady-state and non-steady-state equations were used to determine oleate Ra ([3H]oleate) before, during, and after a stepwise infusion of an oleic acid emulsion. Palmitate Ra did not change during the experiment. Steady-state equations gave the best estimates of oleate inflow approximately 93% of the known oleate infusion rate overall, while errors in tracer estimates of inflow were obtained when non-steady-state equations were used. The metabolic clearance rate of oleate was inversely related to plasma concentration (P less than 0.01). In conclusion, accurate estimates of FFA inflow were obtained when steady-state equations were used, even under conditions of abrupt and recent changes in Ra. Non-steady-state equations, in contrast, may provide erroneous estimates of inflow. The decrease in metabolic clearance rate during exogenous infusion of oleate suggests that FFA transport may follow second-order kinetics.

The basic equations for a supplemented GSMP and its applications to queues

1988 ◽  
Vol 25 (03) ◽  
pp. 565-578 ◽  
Author(s):  
Masakiyo Miyazawa ◽  
Genji Yamazaki
Keyword(s):  
Stochastic Process ◽  
Steady State ◽  
Queueing Networks ◽  
General Setting ◽  
Main Concern ◽  
Stationary Condition ◽  
State Equations ◽  
Semi Markov Process ◽  
Basic Equations ◽  
Stieltjes Transforms

A supplemented GSMP (generalized semi-Markov process) is a useful stochastic process for discussing fairly general queues including queueing networks. Although much work has been done on its insensitivity property, there are only a few papers on its general properties. This paper considers a supplemented GSMP in a general setting. Our main concern is with a system of Laplace–Stieltjes transforms of the steady state equations called the basic equations. The basic equations are derived directly under the stationary condition. It is shown that these basic equations with some other conditions characterize the stationary distribution. We mention how to get a solution to the basic equations when the solution is partially known or inferred. Their applications to queues are discussed.

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts

Nano Letters ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 4390-4399 ◽  
Author(s):  
Kechao Tang ◽  
Andrew C. Meng ◽  
Fei Hui ◽  
Yuanyuan Shi ◽  
Trevor Petach ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Liquid Electrolyte ◽  
Resistance Switching ◽  
Filament Formation ◽  
Conductive Filament

KINETIC EQUATIONS FOR ENZYME REACTIONS IN THE PRESENCE OF POWERFUL INHIBITORS

1959 ◽  
Vol 37 (8) ◽  
pp. 1268-1271 ◽  
Author(s):  
Richard M. Krupka ◽  
Keith J. Laidler
Keyword(s):  
Steady State ◽  
Kinetic Equations ◽  
Competitive Inhibitor ◽  
Graphical Analysis ◽  
Rate Data ◽  
State Equations ◽  
Enzyme Reactions ◽  
Simple Addition

Steady-state equations are worked out for the case of a competitive inhibitor that is present in concentrations comparable with that of the enzyme; allowance is made for the inhibitor attached to the enzyme. Two cases are considered: in case 1 the enzyme and inhibitor form a simple addition complex, while in case 2 a molecule is split off. Methods of graphical analysis of rate data are described.

Hopf Bifurcation in the Double-Glazing Problem With Conducting Boundaries

1987 ◽  
Vol 109 (4) ◽  
pp. 894-898 ◽  
Author(s):  
K. H. Winters
Keyword(s):  
Steady State ◽  
Hopf Bifurcation ◽  
Gravity Waves ◽  
Traveling Waves ◽  
Critical Rayleigh Number ◽  
Boussinesq Approximation ◽  
Time Dependent ◽  
Oscillatory Convection ◽  
Extended System ◽  
State Equations

Oscillatory convection has been observed in recent experiments in a square, air-filled cavity with differentially heated sidewalls and conducting horizontal surfaces. We show that the onset of the oscillatory convection occurs at a Hopf bifurcation in the steady-state equations for free convection in the Boussinesq approximation. The location of the bifurcation point is found by solving an extended system of steady-state equations. The predicted critical Rayleigh number and frequency at the onset of oscillations are in excellent agreement with the values measured recently and with those of a time-dependent simulation. Four other Hopf bifurcation points are found near the critical point and their presence supports a conjectured resonance between traveling waves in the boundary layers and interior gravity waves in the stratified core.

scholarly journals Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Mingqun Qi ◽  
Cuiping Guo ◽  
Meihan Zeng
Keyword(s):  
Oxygen Vacancy ◽  
Hafnium Oxide ◽  
Memory Performance ◽  
Random Access ◽  
Memory Device ◽  
Electrical Performance ◽  
Forming Process ◽  
Conductive Filament ◽  
Functional Layer ◽  
Free Process

Switching between high resistance states and low resistance states in a resistive random access memory device mainly depends on the formation and fracture of conductive filaments. However, the randomness of the conductive filament growth and the potential breakdown of the large voltage in the forming process will lead to unstable resistive switching and memory performance. We studied the possible natural forming process of conductive filaments for intrinsic defects under the influence of top electrode material based on the structure of W/HfO2-x/Pt. Such a simple device shows long retention time and great endurance cycles. The dendritic oxygen vacancy (VO) conductive filament model was constructed, and the dynamic VO migration under directional external bias was described according to the characteristic electrical performance. In addition, we also explored the relationship between the multilevel resistance and the evolution of a dendritic VO conductive filament, signifying the potential application of multilevel storage in the future. Furthermore, a Ag/HfO2-x/Ag selector was fabricated to assemble the memory device in wire connection which exhibits the potential of eliminating leaky current in the memory array. The connection also indicates that the fabrication process of the 1S1R structure can be simplified by using the same functional layer.

The influence of pH and inhibitors on the kinetics of enzyme reactions involving two intermediates

1967 ◽  
Vol 45 (5) ◽  
pp. 539-546 ◽  
Author(s):  
Harvey Kaplan ◽  
Keith J. Laidler
Keyword(s):  
Steady State ◽  
Ph Dependence ◽  
Free Enzyme ◽  
State Equations ◽  
Enzyme Reactions ◽  
Substrate Complex ◽  
Rate Determining Step ◽  
Enzyme Substrate ◽  
Special Cases ◽  
Influence Of Ph

General steady-state equations are worked out for enzyme reactions which occur according to the scheme [Formula: see text]Equations showing the pH dependence of the kinetic parameters are developed in a form which distinguishes between essential and nonessential ionizing groups. The pK dependence of [Formula: see text], the second-order constant extrapolated to zero substrate constant, gives pK values for groups which ionize on the free enzyme, but reveals such a pK only if the corresponding group is also involved in the breakdown of the Michaelis complex. General steady-state equations are also developed for the case in which an inhibitor can combine with the free enzyme, the enzyme–substrate complex, and also a second intermediate (e.g. an acyl enzyme). The equations are given in a form that is convenient for analyzing the experimental results, and a number of special cases are considered. It is shown how the type of inhibition depends not only on the nature of the inhibitor but also on that of the substrate, an important factor being the rate-determining step of the reaction. Examples of the various kinds of behavior are given.

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