Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxy

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

Download Full-text

Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy

Applied Sciences ◽

10.3390/app9091772 ◽

2019 ◽

Vol 9 (9) ◽

pp. 1772

Author(s):

Gu ◽

Zhao ◽

Ye ◽

Deng ◽

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Dislocation Density ◽

Molecular Beam ◽

Strain Relaxation ◽

Relaxation Mechanism ◽

Threading Dislocation ◽

Threading Dislocation Density ◽

Typical Strain

Single-crystalline Si1−xGex thin films on Si (100) with low threading dislocation density (TDD) are highly desired for semiconductor industrials. It is challenging to suppress the TDD since there is a large mismatch (4.2%) between Ge and Si—it typically needs 106–107/cm2 TDD for strain relaxation, which could, however, cause device leakage under high voltage. Here, we grew Si1−xGex (x = 0.5–1) films on Si (001) by low temperature molecular beam epitaxy (LT-MBE) at 200 °C, which is much lower than the typical temperature of 450–600 °C. Encouragingly, the Si1−xGex thin films grown by LT-MBE have shown a dramatically reduced TDD down to the 103–104/cm2 level. Using transmission electron microscopy (TEM) with atomic resolution, we discovered a non-typical strain relaxation mechanism for epitaxial films grown by LT-MBE. There are multiple-layered structures being introduced along out-of-plane-direction during film growth, effectively relaxing the large strain through local shearing and subsequently leading to an order of magnitude lower TDD. We presented a model for the non-typical strain relaxation mechanism for Si1−xGex films grown on Si (001) by LT-MBE.

Download Full-text

Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1734683 ◽

2004 ◽

Vol 84 (23) ◽

pp. 4599-4601 ◽

Cited By ~ 9

Author(s):

Yu. B. Bolkhovityanov ◽

A. S. Deryabin ◽

A. K. Gutakovskii ◽

M. A. Revenko ◽

L. V. Sokolov

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

Strain Relaxation ◽

Step Process ◽

Enhanced Strain

Download Full-text

The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation

MRS Proceedings ◽

10.1557/proc-796-v2.8 ◽

2003 ◽

Vol 796 ◽

Author(s):

Prabhakar Bandaru ◽

Subal Sahni ◽

Eli Yablonovitch ◽

Hyung-Jun Kim ◽

Ya-Hong Xie

Keyword(s):

Electron Beam ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

Electron Beam Evaporation ◽

Si Substrates ◽

Surface Hydrogen ◽

Growth Modes ◽

Device Properties ◽

Cmos Processing

ABSTRACTWe report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.

Download Full-text

STRAIN RELAXATION IN SiGe VIRTUAL SUBSTRATE CHARACTERIZED BY HIGH RESOLUTION X-RAY DIFFRACTION

International Journal of Modern Physics B ◽

10.1142/s0217979210056311 ◽

2010 ◽

Vol 24 (22) ◽

pp. 4225-4231

Author(s):

W. S. TAN ◽

H. L. CAI ◽

X. S. WU ◽

K. M. DENG ◽

H. H. CHENG

Keyword(s):

High Resolution ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Buffer Layer ◽

Molecular Beam ◽

Strain Relaxation ◽

X Ray Diffraction ◽

X Ray ◽

Sb Doping

In this paper, with solid source molecular beam epitaxy technique, Si 1-x Ge x( SiGe ) virtual substrates were deposited on low-temperature-grown Si (LT- Si ) buffer layer, which was doped with Sb . The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction. Results indicated that Sb -doping in LT- Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate. The segregated Sb on the surface of LT- Si layer acts as surfactant and results in abrupt strain relaxation.

Download Full-text

LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY

Acta Physica Sinica ◽

10.7498/aps.37.1607 ◽

1988 ◽

Vol 37 (10) ◽

pp. 1607

Author(s):

ZHOU GUO-LIANG ◽

CHEN KE-MING ◽

TIAN LIANG-GUANG

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

Temperature Growth ◽

Low Temperature Growth ◽

Si Substrates

Download Full-text

Compound-source Molecular Beam Epitaxy of GaN on Si at Low Temperature Using GaN Powder and Ammonia as Sources

MRS Proceedings ◽

10.1557/proc-0955-i07-23 ◽

2006 ◽

Vol 955 ◽

Author(s):

Tohru Honda ◽

Masaru Sawada ◽

Hiromi Yamamoto ◽

Masashi Sawadaishi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Photoelectron Spectroscopy ◽

Molecular Beam ◽

High Energy ◽

Back Reaction ◽

Xps Spectra ◽

Temperature Growth ◽

Low Temperature Growth ◽

Si Substrates

ABSTRACTLow-temperature growth of GaN is very attracting for the application to light emitting devices grown on Si substrates because it prevents the melt-back reaction between Ga and Si substrates. The low-temperature growth of GaN by compound-source molecular beam epitaxy (CS-MBE) has been reported. In the previous report, GaN powders were used as a source and no additional nitrogen source was introduced during the growth. At present, its growth mechanism is unclear. In this paper, CS-MBE of GaN layers using GaN and ammonia as sources is discussed. Especially, the reduction of excess Ga in GaN layers by introducing ammonia supply is discussed based on their refraction high-energy electron diffraction (RHEED) patterns and x-ray photoelectron spectroscopy (XPS) spectra.

Download Full-text