Dislocation density and strain-relaxation in Ge 1−x Sn x layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy

2017 ◽  
Vol 470 ◽  
pp. 135-142 ◽  
Author(s):  
Krista R. Khiangte ◽  
Jaswant S. Rathore ◽  
Vaibhav Sharma ◽  
Swagata Bhunia ◽  
Sudipta Das ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Dislocation Density ◽  
Molecular Beam ◽  
Strain Relaxation

scholarly journals Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy

2019 ◽  
Vol 9 (9) ◽  
pp. 1772
Author(s):  
Gu ◽  
Zhao ◽  
Ye ◽  
Deng ◽  
Lu
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Dislocation Density ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Typical Strain

Single-crystalline Si1−xGex thin films on Si (100) with low threading dislocation density (TDD) are highly desired for semiconductor industrials. It is challenging to suppress the TDD since there is a large mismatch (4.2%) between Ge and Si—it typically needs 106–107/cm2 TDD for strain relaxation, which could, however, cause device leakage under high voltage. Here, we grew Si1−xGex (x = 0.5–1) films on Si (001) by low temperature molecular beam epitaxy (LT-MBE) at 200 °C, which is much lower than the typical temperature of 450–600 °C. Encouragingly, the Si1−xGex thin films grown by LT-MBE have shown a dramatically reduced TDD down to the 103–104/cm2 level. Using transmission electron microscopy (TEM) with atomic resolution, we discovered a non-typical strain relaxation mechanism for epitaxial films grown by LT-MBE. There are multiple-layered structures being introduced along out-of-plane-direction during film growth, effectively relaxing the large strain through local shearing and subsequently leading to an order of magnitude lower TDD. We presented a model for the non-typical strain relaxation mechanism for Si1−xGex films grown on Si (001) by LT-MBE.

Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

2004 ◽  
Vol 96 (12) ◽  
pp. 7665-7674 ◽  
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. S. Deryabin ◽  
A. K. Gutakovskii ◽  
M. A. Revenko ◽  
L. V. Sokolov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Strain Relaxation

Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (46) ◽  
pp. 10721-10727 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Yunfang Guan ◽  
Jingling Li ◽  
Xiaona Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Si Substrate ◽  
Structural Perfection ◽  
High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

2004 ◽  
Vol 84 (23) ◽  
pp. 4599-4601 ◽  
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. S. Deryabin ◽  
A. K. Gutakovskii ◽  
M. A. Revenko ◽  
L. V. Sokolov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Step Process ◽  
Enhanced Strain

STRAIN RELAXATION IN SiGe VIRTUAL SUBSTRATE CHARACTERIZED BY HIGH RESOLUTION X-RAY DIFFRACTION

2010 ◽  
Vol 24 (22) ◽  
pp. 4225-4231
Author(s):  
W. S. TAN ◽  
H. L. CAI ◽  
X. S. WU ◽  
K. M. DENG ◽  
H. H. CHENG
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sb Doping

In this paper, with solid source molecular beam epitaxy technique, Si 1-x Ge x( SiGe ) virtual substrates were deposited on low-temperature-grown Si (LT- Si ) buffer layer, which was doped with Sb . The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction. Results indicated that Sb -doping in LT- Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate. The segregated Sb on the surface of LT- Si layer acts as surfactant and results in abrupt strain relaxation.

ZnSe Growth on Lattice-Matched InxGa1-xAs Substrates

1998 ◽  
Vol 05 (03n04) ◽  
pp. 693-700 ◽  
Author(s):  
S. Heun ◽  
R. Lantier ◽  
J. J. Paggel ◽  
L. Sorba ◽  
S. Rubini ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Residual Strain ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Line Emission ◽  
Transmission Electron ◽  
Lattice Matched

The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched In x Ga 1-x As buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values of x and ternary-layer thickness, the partial character of the strain relaxation within the III–V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 182-184 ◽  
pp. 255-258
Author(s):  
H. Heinke ◽  
Franz Dieter Fischer ◽  
A. Waag ◽  
T. Litz ◽  
M. Korn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation
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