GAS Sensor Modelling and Simulation

Author(s):  
Elnaz Akbari ◽  
Zolkafle Buntat ◽  
Mohammad Taghi Ahmadi ◽  
Hediyeh Karimi ◽  
Mohsen Khaledian

Both graphene and CNTs experience changes in their electrical conductance when exposed to different gases (such as CO2, NO2, and NH3), and they are, therefore, ideal candidates for sensing/measuring applications. In this research, a set of novel gas sensor models employing Field Effect Transistor structure using these materials have been proposed. In the suggested models, different physical properties such as conductance, capacitance, drift velocity, carrier concentration, and the current-voltage (I-V) characteristics of graphene/CNTs have been employed to model the sensing mechanism. An Artificial Neural Network model has also been developed for the special case of a CNT gas sensor exposed to NH3 to provide a platform to check the accuracy of the models. The performance of the models has been compared with published experimental data which shows a satisfactory agreement.

Author(s):  
Elnaz Akbari ◽  
Aria Enzevaee ◽  
Hediyeh Karimi ◽  
Mohammad Taghi Ahmadi ◽  
Zolkafle Buntat

Both graphene and CNTs experience changes in their electrical conductance when exposed to different gases (such as CO2, NO2, and NH3), and they are, therefore, ideal candidates for sensing/measuring applications. In this research, a set of novel gas sensor models employing Field Effect Transistor structure using these materials have been proposed. In the suggested models, different physical properties such as conductance, capacitance, drift velocity, carrier concentration, and the current-voltage (I-V) characteristics of graphene/CNTs have been employed to model the sensing mechanism. An Artificial Neural Network model has also been developed for the special case of a CNT gas sensor exposed to NH3 to provide a platform to check the accuracy of the models. The performance of the models has been compared with published experimental data which shows a satisfactory agreement.


2021 ◽  
Author(s):  
Salomé Forel ◽  
Leandro Sacco ◽  
Alice Castan ◽  
Ileana Florea ◽  
Costel Sorin Cojocaru

We design a gas sensor by combining two SWCNT-FET devices in an inverter configuration enabling a better system miniaturization together with a reduction of power consumption and ease of data processing.


2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.


2021 ◽  
Author(s):  
Saravanan Yuvaraja ◽  
Veerabhadraswamy Nagarajappa Bhyranalyar ◽  
Sachin Ashok Bhat ◽  
Sandeep Goud Surya ◽  
Channabasaveshwar Veerappa Yelamaggad ◽  
...  

The proposed H2S gas sensor is a novel heterojunction combination that can readily absorb toxic gases, changing the channel resistance of the device. The OFET device is a highly stable and selective tool that can help in taking preventive measures.


1996 ◽  
Vol 36 (1-3) ◽  
pp. 285-289 ◽  
Author(s):  
Zenko Gergintschew ◽  
Peter Kornetzky ◽  
Dagmar Schipanski

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