Surface Characteristics and Aqueous Dispersibility of Commercial Silicon Nitride Powders: Comparison of As-Received Powders

2008 ◽  
pp. 855-857
Author(s):  
Jian Qing Dai ◽  
Yong Huang ◽  
Jing Tao Ma ◽  
Zhi Peng Xie
Keyword(s):  
Silicon Nitride ◽  
Surface Characteristics ◽  
Aqueous Dispersibility

Surface Characteristics and Aqueous Dispersibility of Commercial Silicon Nitride Powders: Comparison of As-Received Powders

2008 ◽  
Vol 368-372 ◽  
pp. 855-857
Author(s):  
Jian Qing Dai ◽  
Yong Huang ◽  
Jing Tao Ma ◽  
Zhi Peng Xie
Keyword(s):  
Silicon Nitride ◽  
Surface Characteristics ◽  
Water Soluble ◽  
Surface Groups ◽  
Production Methods ◽  
Soluble Ions ◽  
Water Soluble Ions ◽  
Powder Properties ◽  
Aqueous Dispersibility

Particular attention is paid in this paper to understanding the surface characteristics and aqueous dispersibility of as-received commercial powders. The different production methods and specific pulverization processes used for the four powders studied (FD1, FD2, M11, UBE) result in obvious differences in such powder properties as surface groups, aqueous dispersibility, and water-soluble ions.

Changes in surface characteristics of silicon nitride prepared for extrusion

1996 ◽  
Vol 16 (10) ◽  
pp. 1127-1132 ◽  
Author(s):  
R.M.Torres Sanchez ◽  
A.B. Garcia ◽  
A.M. Cesio
Keyword(s):  
Silicon Nitride ◽  
Surface Characteristics

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications

2017 ◽  
Vol 897 ◽  
pp. 327-330
Author(s):  
Sandip Kumar Roy ◽  
Jesus Urresti Ibanez ◽  
Anthony G. O’Neill ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Silicon Nitride ◽  
High Performance ◽  
Ohmic Contacts ◽  
Surface Characteristics ◽  
Harsh Environments ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Mos Devices ◽  
High K ◽  
Mos Structures

Oxygen free Ohmic contacts are essential for the realisation of high performance devices. Ohmic contacts in SiC often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the electrical and surface characteristics. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOS structures. In order to prevent damage during the high-k formation the use of silicon nitride as a passivation layer, capable of protecting the contacts during annealing, has been investigated. In this work we have investigated and compared silicon nitride protected high-κ dielectric SiC based MOS capacitors with the unprotected SiC MOS devices in terms of electrical and optical characteristics.

Study on Preparation of Spherical Zirconia Powder in Microemulsion System and its Surface Characteristics

2007 ◽  
Vol 280-283 ◽  
pp. 977-980 ◽  
Author(s):  
Jintao He ◽  
Tian Ma ◽  
Yong Huang ◽  
Jin Long Yang
Keyword(s):  
Treatment Process ◽  
Surface Characteristics ◽  
Post Treatment ◽  
Microemulsion System ◽  
Zirconia Powder ◽  
Aqueous Dispersibility ◽  
Post Treatment Process

In this paper, a W/O microemulsion system composed of cyclohexane / water / TritonX-100 / hexyl alcohol is adopted to prepare ultrafine spherical zirconia powder via the reaction between the precipitant and zirconium salt solved in the nano reactors. Furthermore, the powder’s surface characteristics and aqueous dispersibility that strongly depends on the post-treatment process are investigated thoroughly.

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